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 PD -94029
IRF5805
HEXFET(R) Power MOSFET
l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge
VDSS
-30V
RDS(on) max
0.098@VGS = -10V 0.165@VGS = -4.5V
ID
-3.8A -3.0A
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET(R) power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
D
1 6
A D
D
2
5
D
G
3
4
S
T o p V ie w
TSOP-6
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-30 -3.8 -3.0 -15 2 1.28 0.02 20 -55 to + 150
Units
V A W W W/C V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
62.5
Units
C/W
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1
11/6/00
IRF5805
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. -30 --- --- --- -1.0 3.5 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.02 --- --- --- --- --- --- --- --- 11 2.3 1.5 11 14 90 49 511 79 50
Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.098 VGS = -10V, ID = -3.8A 0.165 VGS = -4.5V, ID = -3.0A -2.5 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -3.8A -15 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 17 ID = -3.8A --- nC VDS = -15V --- VGS = -10V 17 VDD = -15V, VGS = -10V 21 ID = -1.0A ns 135 RG = 6.0 74 RD = 15 --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 19 16 -2.0 A -15 -1.2 29 24 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, I F = -2.0A di/dt = -100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1 in square Cu board, t 10sec.
Pulse width 400s; duty cycle 2%.
2
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IRF5805
100
VGS -10.0V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V TOP
100
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
10
10
VGS -10.0V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V TOP
1
1
-2.5V
0.1
0.1
-2.5V 20s PULSE WIDTH Tj = 25C
20s PULSE WIDTH Tj = 150C
0.01 100 0.1 1 10 100
0.01 0.1 1 10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -3.8A
-I D , Drain-to-Source Current (A)
1.5
10
TJ = 150 C
1
1.0
TJ = 25 C
0.5
0.1 2.0
V DS = -15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRF5805
800
16
600
Coss = Cds + Cgd
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd
ID = -3.8A V DS=-24V V DS=-15V
12
C, Capacitance(pF)
Ciss
400
8
200
4
Coss Crss
0 1 10 100
0 0 2 4 6 8 10 12 14
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
-ID , Drain Current (A) I
10
10
10us
TJ = 150 C
100us
1
1
1ms
TJ = 25 C
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms
0.1 0.0
V GS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0
0.1 0.1
100
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF5805
4.0
VDS VGS
RD
-ID , Drain Current (A)
3.0
D.U.T.
+
VGS
2.0
Pulse Width 1 s Duty Factor 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
VGS
0.0 25 50 75 100 125 150
10%
TC , Case Temperature ( C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10
0.1 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
RG
VDD
5
IRF5805
( RDS ( on ) , Drain-to-Source On Resistance )
( RDS(on), Drain-to -Source On Resistance )
0.500 0.450 0.400 0.350 0.300 0.250 0.200 0.150 0.100 0.050 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
0.400
0.300 VGS = -4.5V 0.200 VGS = -10V 0.100
ID = -3.8A
0.000 0 5 10 15 20 -ID , Drain Current ( A )
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate Voltage
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50K
QG QGS VG QGD
12V
.2F .3F
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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+
D.U.T.
-
VDS
IRF5805
2.5 30
2.3
25
-VGS(th) ( V )
20
Power (W)
150
2.1
ID = -250A
15
1.9
10 1.7
5
1.5 -75 -50 -25 0 25 50 75 100 125
0 0.001 0.010 0.100 1.000 10.000 100.000
TJ , Temperature ( C )
Time (sec)
Fig 15. Typical Vgs(th) Vs. Junction Temperature
Fig 16. Typical Power Vs. Time
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7
IRF5805
TSOP-6 Package Outline
TSOP-6 Part Marking Information
8
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IRF5805
TSOP-6 Tape & Reel Information
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 11/00
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9


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