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| May 1997 NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor General Description SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Features -2.7 A, -20 V. RDS(ON) = 0.07 @ VGS = -4.5 V RDS(ON) = 0.095 @ VGS = -2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ___________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings T A = 25C unless otherwise noted Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1) (Note 1) NDH8304P -20 8 -2.7 -10 0.8 -55 to 150 Units V V A W C Operating and Storage Temperature Range THERMAL CHARACTERISTICS RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) (Note 1) 156 40 C/W C/W (c) 1997 Fairchild Semiconductor Corporation NDH8304P Rev.C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 A VDS = -16 V, VGS = 0 V TJ= 55C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 8 V, VDS = 0 V VGS = -8 V, VDS= 0 V VDS = VGS, ID = - 250 A TJ= 125C Static Drain-Source On-Resistance VGS = -4.5 V, ID = -2.7 A TJ= 125C VGS = -2.7 V, ID = -2.3 A ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd On-State Drain Current VGS = -4.5 V, VDS = -5 V VGS = -2.7 V, VDS = -5 V Forward Transconductance VDS = -5 V, ID = -2.7 A VDS = -10 V, VGS = 0 V, f = 1.0 MHz DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 865 415 150 pF pF pF -10 -3 8 S -0.4 -0.3 -0.7 -0.5 0.061 0.087 0.082 -20 -1 -10 100 -100 V A A nA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage -1 -0.8 0.07 0.125 0.095 A V SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -10 V, ID = -2.7 A, VGS = -4.5 V VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 11 25 78 55 16 2.4 5.1 22 50 150 100 23 ns ns ns ns nC nC nC NDH8304P Rev.C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max -0.67 (Note 2) Units A V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.67 A -0.7 -1.2 PD (t) = R JA(t) T J -TA = T J -TA R JC+RC (t ) A = I 2 (t) x RDS(ON ) D TJ Typical RJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: 156oC/W when mounted on a 0.0025 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. NDH8304P Rev.C Typical Electrical Characteristics -15 2.5 V GS =-4.5V -3.5 -3.0 -2.7 -2.5 R DS(on) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE 2 I D , DRAIN-SOURCE CURRENT (A) -12 V GS = -2.0V -9 -2.0 -6 -2.5 1.5 -2.7 -3.0 -3.5 -4.5 1 -3 -1.5 0 0 -1 -2 -3 -4 V DS , DRAIN-SOURCE VOLTAGE (V) 0.5 0 -3 I D -6 -9 , DRAIN CURRENT (A) -12 -15 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 1.6 1.8 I D = -2.7A DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE 1.4 V GS = -4.5V 1.6 1.4 1.2 VGS = -4.5V TJ = 125C 1.2 RDS(on) , NORMALIZED R DS(ON), NORMALIZED 25C 1 0.8 0.6 0.4 1 -55C 0.8 0.6 -50 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (C) J 125 150 0 -3 -6 -9 -12 -15 I D , DRAIN CURRENT (A) Figure 3. On-Resistance Variation with Temperature. -8 Figure 4. On-Resistance Variation with Drain Current and Temperature. 1.2 V DS = -5V -6 T J = -55C GATE-SOURCE THRESHOLD VOLTAGE 25C 125C V GS(th), NORMALIZED 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 VDS = V G S I D = -250A I D , DRAIN CURRENT (A) -4 -2 0 -0.5 -25 -1 -1.5 -2 VGS , GATE TO SOURCE VOLTAGE (V) -2.5 0 25 50 75 100 T , JUNCTION TEMPERATURE (C) J 125 150 Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. NDH8304P Rev.C Typical Electrical Characteristics 1.1 DRAIN-SOURCE BREAKDOWN VOLTAGE 10 I D = -250A 1.08 -I , REVERSE DRAIN CURRENT (A) 1.06 1.04 1.02 1 0.98 0.96 0.94 -50 3 1 0.5 VGS = 0V TJ = 125C BV DSS , NORMALIZED 25C 0.1 -55C 0.01 0.001 S -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 0.0001 0 0.2 -V SD 0.4 0.6 0.8 1 , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 2500 5 I -V GS , GATE-SOURCE VOLTAGE (V) 1500 1000 CAPACITANCE (pF) 4 D = -2.7A V DS = -5V -10V -15V Ciss 3 500 Coss 2 300 200 f = 1 MHz V GS = 0 V Crss 1 100 0 .1 0 .2 0 .5 1 2 5 -V DS , DRAIN TO SOURCE VOLTAGE (V) 10 20 0 0 5 10 Q g , GATE CHARGE (nC) 15 20 Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. -VDD V IN D ton t off tr 90% RL V OUT t d(on) t d(off) 90% tf VGS R GEN VOUT G DUT 10% 10% 90% S V IN 10% 50% 50% PULSE WIDTH INVERTED Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDH8304P Rev.C Typical Electrical and Thermal Characteristics 20 g FS, TRANSCONDUCTANCE (SIEMENS) 15 10 V DS = -4.5V 16 T J = -55C -I , DRAIN CURRENT (A) 5 2 1 0.5 R ( DS ) ON LIM IT 1m 10 ms s 10 25C 12 0m s 1s 10 s 125C 8 0.1 0.05 D V GS = -4.5V SINGLE PULSE RJ A = See Note 1 A DC 4 TA = 25C 0.5 1 2 5 10 20 30 0 0 -4 -8 -12 I D , DRAIN CURRENT (A) -16 -20 0.01 0.1 0.2 - V DS , DRAIN-SOURCE VOLTAGE (V) Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. Maximum Safe Operating Area. 1 TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.05 0.02 r(t), NORMALIZED EFFECTIVE 0.1 R JA (t) = r(t) * R JA R JA = See Note 1 P(pk) t1 Single Pulse 0.01 0.01 t2 TJ - T =P *R (t) A JA Duty Cycle, D = t 1 / t 2 0.001 0.0001 0.001 0.01 0.1 t 1 , TIME (sec) 1 10 100 300 Figure 15. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1 .Transient thermal response will change depending on the circuit board design. NDH8304P Rev.C |
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