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PTF 10043 12 Watts, 1.9-2.0 GHz GOLDMOS (R) Field Effect Transistor Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED Performance at 2.0 GHz, 26 Volts - Output Power = 12 Watts Min - Power Gain = 12 dB Typ at 3 Watts - Efficiency = 45% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability * Typical Output Power vs. Input Power 20 Output Power (Watts) 16 12 8 4 0 0.0 0.2 0.4 0.6 0.8 1.0 A-12 100 3456 9834 43 VDD = 26 V IDQ = 150 mA f = 2.0 GHz Input Power (Watts) Package 20222 RF Specifications (100% Tested) Characteristic Gain (VDD = 26 V, POUT = 3 W, IDQ = 150 mA, f = 1.93, 2.0 GHz) Power Output at 1 dB Compressed (VDD = 26 V, POUT = 12 W, IDQ = 150 mA, f = 2.0 GHz) Drain Efficiency (VDD = 26 V, POUT = 12 W, IDQ = 150 mA, f = 2.0 GHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 12 W, IDQ = 150 mA, f = 2.0 GHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol Gps p-1dB hD Y Min 11 12 40 -- Typ 12 14 45 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF 10043 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 -- 3.0 -- Typ -- -- -- 0.8 Max -- 1.0 5.0 -- Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 2 A Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 20 200 55 0.31 -40 to +150 3.2 Unit Vdc Vdc C Watts W/C C C/W Typical Performance POUT, Gain & Efficiency (at P-1dB) vs. Frequency Efficiency 14 60 Gain Efficiency (%) Output Power & Efficiency 16 15 Gain 60 50 40 12 50 40 10 8 6 4 2 1900 Gain 14 13 12 11 1750 VDD = 26 V IDQ = 150 mA Output Pow er (W) 30 20 VCC = 26 V - 30 5 IDQ = 150 mA POUT = 10 W Return Loss 20 -15 10 -25 1800 1850 1900 1950 2000 10 2050 1925 1950 1975 0 -35 2000 Frequency (MHz) Frequency (MHz) 2 Return Loss (dB) Efficiency (%) Broadband Test Fixture Performance Gain (dB) e Output Power vs. Supply Voltage 20 0 -10 PTF 10043 Intermodulation Distortion vs. Output Power VDD = 26 V, IDQ = 150 mA f1 = 1999.9 MHz, f2 = 2000.0 MHz Output Power (Watts) 15 IMD (dBc) -20 -30 -40 -50 -60 10 5 IDQ = 150 mA f = 2.0 GHz 0 22 24 26 28 30 32 34 -70 0 2.5 5 7.5 10 12.5 15 Supply Voltage (Volts) Output Power (Watts-PEP) Power Gain vs. Output Power 16 15 Capacitance vs. Supply Voltage * 50 45 40 35 30 25 20 15 10 5 0 0 10 3 Cds and Cgs (pF) Power Gain (dB) 14 13 12 11 10 9 8 0.1 ICQ = 150 mA ICQ = 75 mA Cgs VGS =0 V f = 1 MHz 2.5 1.5 Cds Crss 20 30 40 1 0.5 0 ICQ = 37 mA VDD = 26 V f = 2.0 GHz 1.0 10.0 100.0 Output Power (Watts) Supply Voltage (Volts) *This part is internally matched. Measurements of the finished product will not yield these figures. Bias Voltage vs. Temperature 1.03 1.02 Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.96 0.95 0.94 -20 0.15 1 1.85 0 20 Voltage nomalized to 1.0 V Series show current (A) 0.575 1.425 2.275 40 60 80 100 Temp. (C) 3 Crss (pF) 2 PTF 10043 Impedance Data VDS = 26 V, POUT = 12 W, IDQ = 150 mA e D Z Source Z Load Z0 = 50 W G S Frequency GHz 1.75 1.80 1.85 1.90 1.95 2.00 2.05 R Z Source W jX -2.4 -2.7 -3.2 -3.1 -2.8 -2.5 -2.3 R 3.2 3.0 2.7 2.4 2.2 1.9 1.7 2.8 3.2 3.0 2.5 2.3 2.2 2.3 Z Load W jX 1.9 1.5 0.9 0.4 0.0 -0.6 -1.1 Typical Scattering Parameters (VDS = 28 V, ID = 500 mA) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 S11 Mag 0.912 0.917 0.951 0.964 0.971 0.974 0.975 0.975 0.980 0.979 0.981 0.977 0.975 0.965 0.951 0.929 0.904 0.885 0.892 0.918 0.942 0.964 S21 Ang -143 -150 -163 -168 -171 -174 -175 -177 -178 -179 180 179 177 176 175 174 174 175 177 177 177 176 S12 Ang 86 80 53 39 28 20 12 6 0 -5 -11 -16 -23 -30 -39 -51 -68 -89 -113 -134 -151 -162 4 S22 Ang 0 -5 -16 0 65 94 98 95 93 92 89 86 83 82 80 78 74 70 67 61 54 56 Mag 14.7 11.5 5.83 3.71 2.63 1.99 1.56 1.26 1.07 0.932 0.846 0.790 0.763 0.759 0.782 0.828 0.880 0.884 0.802 0.650 0.489 0.366 Mag 0.007 0.006 0.004 0.002 0.002 0.003 0.006 0.008 0.010 0.012 0.014 0.015 0.017 0.019 0.021 0.023 0.025 0.027 0.029 0.030 0.028 0.025 Mag 0.641 0.650 0.750 0.824 0.881 0.931 0.952 0.950 0.951 0.948 0.959 0.965 0.970 0.972 0.974 0.975 0.986 1.00 1.02 1.02 1.01 1.01 Ang -70 -82 -107 -122 -132 -139 -146 -151 -155 -158 -160 -162 -164 -166 -168 -169 -170 -171 -173 -175 -177 -178 e Test Circuit PTF 10043 Q1 Block Diagram for f = 2.0 GHz Q1 Z1, Z6 Z2, Z5 Z3 Z4 PTF 10043 50 W 50 W, 0.085 l 7.5 W, 0.154 l 7.9 W, 0.238 l RF LDMOS FET Microstrip Microstrip Microstrip Microstrip Bias Parts (not shown on layout) R3 2K Potentiometer R4 10 W Resistor C1, C4 C2, C3, C6, C8 C5, C7 C9 L1, L2 0.3-3.5 33 pF 0.1 mF, 50 V 100 mF, 50V #20 AWG Trim Capacitor Capacitor ATCB Capacitor Digi-Key P4917-ND Electrolytic Capacitor Digi-Key P5276 3 Turn, 0.12" I.D. R1, R2 Circuit Board 500 W .031" thick, e r = 4.0, G200, AlliedSignal, 2 oz. copper Resistor e 10043 Parts Layout (not to scale) 5 PTF 10043 e Artwork (not to scale) Package Mechanical Specifications Package 20222 Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1997, 1998, 1999, 2001 Ericsson Inc. EUS/KR 1522-PTF 10043 Uen Rev. A 01-16-01 6 |
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