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PTF 10195 125 Watts, 869-894 MHz GOLDMOS (R) Field Effect Transistor Description The 10195 is an internally matched 125-watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device operates at 53% efficiency with 13 dB of gain minimum. Full gold metallization ensures excellent device lifetime and reliability. * * INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 125 Watts - Power Gain = 14 dB Typical - Efficiency = 53% Typical Full Gold Metallization Excellent Thermal Stability 100% Lot Traceability * * * Typical Power Output and Efficiency vs. Input Power 160 64 56 Power Output (Watts) 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 Power Output Efficiency 40 Efficiency (%) 48 VDD = 28 V IDQ = 1.3 A f = 894 MHz 32 24 16 8 0 1234 1019 5600 5 -A Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1300 mA, f = 894 MHz) Drain Efficiency (VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol Gpe P-1dB h Y Min 13 125 45 10:1 Typ 14 140 53 -- Max -- -- -- -- Units dB Watts % -- e 1 PTF 10195 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 -- 3.0 -- Typ -- -- -- 3.0 Max -- 1.0 5.0 -- Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 100 mA VDS = 10 V, ID = 3 A Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 20 200 266 1.52 -40 to +150 .66 Unit Vdc Vdc C Watts W/C C C/W Typical Performance Test Circuit Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency 200 160 Output Power (W) Broadband Test Fixture Performance 18 16 Efficiency 55 45 Gain 20 18 Output Power & Efficiency Gain 16 Gain (dB) 14 12 10 869 VDD = 28 V IDQ = 1.3 A Gain (dB) 14 12 10 8 6 4 120 80 VDD = 28 V IDQ = 1.3 A POUT = 125 W 35 25 Efficiency (%) 40 874 879 884 889 0 894 2 869 874 879 15 0 5 -10 -5 -20 -15 Return Loss (dB) -30 -25 884 889 894 Frequency (MHz) Frequency (MHz) 2 Return Loss Efficiency (%) 20 65 e Power Gain vs. Output Power 17 IDQ = 1600 mA 16 IDQ = 1300 mA 15 IDQ = 1000 mA 14 PTF 10195 Output Power (@ 1 dB Compression) vs. Supply Voltage 130 Output Power (Watts) VDD = 28 V f = 894 MHz Power Gain (dB) 120 110 100 90 80 IDQ = 1300 mA f = 894 MHz 13 0 1 10 100 1000 20 22 24 26 28 30 Output Power (Watts) Supply Voltage (Volts) Gate-Source Voltage vs. Case Temperature 1.04 1.03 Bias Voltage (V) 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 30 80 Case Temperature (C) 130 Voltage normalized to 1.0 V Series show current (A) 0.8 2.728 4.656 6.584 8.512 10.44 Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) -20 VDD = 28 V, IDQ = 1.3 A -30 3rd Order f1 = 894 MHz, f2 = 894.1 MHz 5th IMD (dBc) -40 -50 7th -60 10 20 30 40 50 60 70 80 90 100 Output Power (Watts-PEP) Capacitance vs. Supply Voltage * 300 250 40 Cgs VGS = 0 V f = 1 MHz 35 30 25 20 15 10 Cds & Cgs (pF) 150 100 50 0 0 Cds 5 Crss 10 20 30 40 0 Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these figures. 3 Crss (pF) 200 PTF 10195 Impedance Data RAT e D 0 .1 G S TO W A RD G EN E Z Source Z Load Z0 = 50 W OR VDD = 28 V, POUT = 125 W, IDQ = 1300 mA Frequency MHz 860 869 880 894 905 R Z Source W jX -1.13 -0.94 -0.73 -0.44 -0.22 R 1.97 1.86 1.69 1.52 1.39 Z Load W 0.0 Z Load 905 MHz 0.1 TOW AR D LOAD G TH S 0.2 jX 0.99 1.19 1.38 1.63 1.85 860 MHz 2.30 2.18 2.00 1.79 1.69 905 MHz 860 MHz Z Source 0.1 Test Circuit Test Circuit Schematic for f = 894 MHz DUT l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13 PTF 10195 LDMOS Transistor 0.0273 l 894 MHz Microstrip 50 W 0.0244 l 894 MHz Microstrip 30 W 0.0204 l 894 MHz Microstrip 30 W 0.1800 l 894 MHz Microstrip 30W 0.0715 l 894 MHz Microstrip 8.63W 0.0802 l 894 MHz Microstrip 8.63 W 0.1026 l 894 MHz Microstrip 8.63 W 0.0491 l 894 MHz Microstrip 8.63 W 0.0389 l 894 MHz Microstrip 30W 0.1411 l 894 MHz Microstrip 30 W 0.0116 l 894 MHz Microstrip 30 W 0.0428 l 894 MHz Microstrip 30 W 0.0293 l 894 MHz Microstrip 50 W C1, C3, C8, C12 C2 C4, C5 C6 C7 C11 C13 C10 C9 J1,J2 L1 R1, R2,R3 Circuit Board Capacitor, 43pF 100B 430 Capacitor, 4.3pF 100B 4R3 Capacitor, 5.6pF 100B 5R6 Capacitor, 7.5pF 100B 7R5 Capacitor, 9.1pF 100B 9R1 Capacitor, 5.1pF 100B 5R1 Capacitor, 3.6pF 100B 3R6 Capacitor, 0.1uF Digi-KeyP4525-ND Capacitor,100uF,50V Digi-KeyP5182-ND Connector, SMA, Female, Panel Mount 1301-RPM 513 412/53 7 Turns,22AWG,.120 DIA I.D. N/A Resistor, 220ohm Digi-Key 220QBK-ND .031" thick, er = 4.0, G200 AlliedSignal 4 AV E LE N e PTF 10195 Components Layout (not to scale) 10195_A INPUT ERICSSON ERICSSON 10195_A OUTPUT Artwork (not to scale) 5 PTF 10195 Case Outline Specifications Package 20248 e Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Speciffications subject to change without notice. L3 (c) 2000 Ericsson Inc. EUS/KR 1522-PTF 10195 Uen Rev. A1 12-08-00 6 |
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