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VFT300-28
VHF POWER MOSFET
Silicon N-Channel Enhancement Mode
DESCRIPTION:
The VFT300-28 is Designed for Wideband High Power VHF Amplifier Applications operating up to 250 MHz.
PACKAGE STYLE .400 BAL FLG (D)
A .080x45 B FULL R
FEATURES:
* PG = 14 dB Typical at 175 MHz * D = 55% Typ. at POUT = 300 Watts * OmnigoldTM Metalization System
E .1925 D C
D
D
(4X).060 R
M
G
H I
F G N
G
Sources are connected to flange
L J K
MAXIMUM RATINGS
ID V(BR)DSS VDGR VGS PDISS TJ T STG JC
O
16 A 65 V 65 V 40 V 300 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 0.6 OC/W
TC = 25 OC
O O
DIM A B C D E F G H I J K L M N
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .210 / 5.33 .125 / 3.18 .380 / 9.65 .580 / 14.73 .435 / 11.05 1.090 / 27.69 1.335 / 33.91 .003 / 0.08 .060 / 1.52 .100 / 2.54 .395 / 10.03 .850 / 21.59
.230 / 5.84
.390 / 9.91 .620 / 15.75
1.105 / 28.07 1.345 / 34.16 .007 / 0.18 .070 / 1.78 .115 / 2.92 .230 / 5.84 .407 / 10.34 .870 / 22.10
ORDER CODE: ASI10707
MINIMUM TYPICAL MAXIMUM
65 5.0 1.0 1.0 5.0 1.5 3500 375 188 26 12 50 14 55
CHARACTERISTICS
SYMBOL
V(BR)DSS IDSS IGSS VGS VDS GFS Ciss Coss Crss GPS D VGS = 0 V VDS = 28 V VDS = 0 V VDS = 10 V VGS = 10 V VDS = 10 V
NONETEST CONDITIONS
IDS = 100 mA VGS = 0 V VGS = 20 V ID = 100 mA ID = 10 A ID = 5 A
UNITS
V mA A V V mS
VGS = 28 V VDD = 28 V f = 175 MHz
VDS = 0 V IDQ = 2 x 250 mA
F = 1.0 MHz
pF dB %
REV. A
POUT = 300 W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
1/1
ERROR! REFERENCE SOURCE NOT FOUND.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * TELEX: 18-2651 * FAX (818) 765-3004

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