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| Silicon Schottky Diode Preliminary Data DBS mixer application to 10 GHz Low noise figure q Low barrier type q q BAT 15-098 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 15-098 Marking white B Ordering Code Pin Configuration (tape and reel) Q62702-A0062 Package1) SOD-123 Maximum Ratings Parameter Reverse voltage Forward current Power dissipation, TS 80 C Storage temperature range Operating temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VR IF Ptot Tstg Top Values 4 110 100 - 55 ... + 150 Unit V mA mW - 55 ... + 150 C 770 690 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 07.94 BAT 15-098 Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Breakdown voltage IR = 5 A Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching IF = 10 mA Diode capacitance VR = 0, f = 1 MHz Forward resistance IF = 10 mA/50 mA Symbol min. V(BR) VF - - VF CT RF - - - 0.23 0.32 - - 5.5 - - 20 0.35 - mV pF 4 Values typ. - max. - V Unit Semiconductor Group 2 BAT 15-098 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 BAT 15-098 S11-Parameters Typical impedance characteristics (with external bias I and Z0 = ) f GHz 1 2 3 4 5 6 7 8 9 10 I = 0.02 mA MAG ANG 0.96 0.95 0.94 0.91 0.88 0.87 0.86 0.89 0.91 0.93 - 22.19 - 44.30 - 68.60 - 96.40 - 127.50 - 165.30 - 150.50 109.60 75.20 45.10 I = 0.05 mA MAG ANG 0.83 0.82 0.80 0.76 0.74 0.72 0.72 0.78 0.84 0.88 - 24.20 - 46.30 - 71.30 - 100.00 - 133.50 - 174.30 141.50 101.70 68.89 41.10 I = 0.1 mA MAG ANG 0.71 0.68 0.65 0.61 0.57 0.55 0.60 0.68 0.77 0.83 - 24.59 - 46.70 - 72.30 - 101.50 - 138.50 - 151.30 133.70 94.70 63.90 38.40 I = 0.2 mA MAG ANG 0.71 0.68 0.65 0.61 0.57 0.55 0.60 0.68 0.77 0.83 - 24.59 - 46.70 - 72.30 - 101.50 - 138.50 - 151.30 133.70 94.70 63.90 38.40 I = 0.5 mA MAG ANG 0.06 0.04 0.03 0.09 0.18 0.29 0.41 0.52 0.61 0.71 - 36.11 - 53.72 - 94.30 122.49 101.50 81.30 65.70 49.50 33.50 19.49 S11 = f (f, I) Semiconductor Group 4 |
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