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* High DC Current Gain -- hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc * Curves to 100 A (Pulsed) * Diode Protection to Rated IC * Monolithic Construction with Built-In Base-Emitter Shunt Resistor * Junction Temperature to + 200_C . . . for use as output devices in complementary general purpose amplifier applications.
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
Preferred devices are Motorola recommended choices for future use and best overall value.
High-Current Complementary Silicon Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Thermal Resistance Junction to Case
Maximum Lead Temperature for Soldering Purposes for 10 seconds
Operating and Storage Junction Temperature Range
Total Power Dissipation @ TC = 25_C Derate above 25_C @ TC = 100_C
Base Current -- Continuous
Collector Current -- Continuous Peak
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Rating
Characteristic
BASE
PNP MJ11029 MJ11031 MJ11033
v
3.0 k
Symbol
TJ, Tstg
VCEO
VCB
VEB
IC ICM
PD
IB
Figure 1. Darlington Circuit Schematic
25
COLLECTOR
EMITTER
MJ11028 MJ11029
Symbol
RJC
TL
60
60
- 55 to + 200
MJ11030 MJ11031
300 1.71
50 100
90
90
2
5
BASE
NPN MJ11028 MJ11030 MJ11032
0.584
Max
275
MJ11032 MJ11033
120
120
3.0 k
Watts W/_C
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
_C
_C
25
COLLECTOR
EMITTER
50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60 - 120 VOLTS 300 WATTS
MJ11028 MJ11030 MJ11032* PNP MJ11029 MJ11031 MJ11033 *
*Motorola Preferred Device
CASE 197A-05 TO-204AE (TO-3)
Order this document by MJ11028/D
NPN
1
IC, COLLECTOR CURRENT (AMP)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Symbol Min 60 90 120 -- -- -- -- -- -- -- -- Max -- -- -- Unit Vdc Collector-Emitter Breakdown Voltage (1) (IC = 1 00 mAdc, IB = 0) MJ11028, MJ11029 MJ11030, MJ11031 MJ11032, MJ11033 MJ11028, MJ11029 MJ11030, MJ11031 MJ11032, MJ11033 MJ11028, MJ11029 MJ11030, MJ11031 MJ11032, MJ11033 V(BR)CEO Collector-Emitter Leakage Current (VCE = 60 Vdc, RBE = 1 k ohm) (VCE = 90 Vdc, RBE = 1 k ohm) (VCE = 120 Vdc, RBE = 1 k ohm) (VCE = 60 Vdc, RBE = 1 k ohm, TC = 150_C) (VCE = 90 Vdc, RBE = 1 k ohm, TC = 150_C) (VCE = 120 Vdc, RBE = 1 k ohm, TC = 150_C) Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) ICER mAdc 2 2 2 10 10 10 5 2 Collector-Emitter Leakage Current (VCE = 50 Vdc, IB = 0) DC Current Gain (IC = 25 Adc, VCE = 5 Vdc) (IC = 50 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 25 Adc, IB = 250 mAdc) (IC = 50 Adc, IB = 500 mAdc) Base-Emitter Saturation Voltage (IC = 25 Adc, IB = 200 mAdc) (IC = 50 Adc, IB = 300 mAdc) 100 50 20 10 5 2 1 0.5 0.2 0.1 0.2 0.5 1 2 5 10 20 50 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C SECOND BREAKDOWN LIMITED MJ11028, 29 MJ11030, 31 MJ11032, 33 IEBO ICEO hFE mAdc mAdc -- ON CHARACTERISTICS (1) 1k 400 -- -- -- -- 18 k -- 2.5 3.5 3.0 4.5 VCE(sat) Vdc VBE(sat) Vdc (1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
There are two limitations on the power-handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on T J(pk) = 200_C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
Figure 2. DC Safe Operating Area
100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 1 2 5 10 20 80 s (PULSED) 50 100 MJ11029, MJ11031, MJ11033 PNP MJ11028, MJ11030, MJ11032 NPN VCE = 5 V TJ = 25C 5 MJ11029, MJ11031, MJ11033 PNP MJ11028, MJ11030, MJ11032 NPN 4
3
TJ = 25C IC/IB = 100
VBE(sat)
2
1 VCE(sat) 23
80 s (PULSED) 5 10 20 50 100
0
1
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain 2
Figure 4. "On" Voltage Motorola Bipolar Power Transistor Device Data
MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033
PACKAGE DIMENSIONS
A N C -T- E D U V
2 2 PL SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
K
M
0.30 (0.012) L G
1
TQ
M
Y
M
-Y-
H
B
-Q- 0.25 (0.010)
M
TY
M
DIM A B C D E G H K L N Q U V
INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188
MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77
STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
CASE 197A-05 TO-204AE (TO-3) ISSUE J
Motorola Bipolar Power Transistor Device Data
3
MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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4
Motorola Bipolar Power Transistor Device Data
*MJ11028/D*
MJ11028/D

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