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| DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PBSS4350S 50 V low VCEsat NPN transistor Product specification 2001 Nov 19 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor FEATURES * High power dissipation (830 mW) * Ultra low collector-emitter saturation voltage * 3 A continuous current * High current switching * Improved device reliability due to reduced heat generation APPLICATIONS * Medium power switching and muting * Linear regulators * DC/DC convertor * Supply line switching circuits * Battery management applications * Strobe flash units * Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION NPN low VCEsat transistor in a SOT54 plastic package. PNP complement: PBSS5350S. MARKING TYPE NUMBER PBSS4350S MARKING CODE S4350S Fig.1 1 handbook, halfpage PBSS4350S QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base collector emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 50 3 5 <145 UNIT V A A m 2 3 2 1 3 MAM259 Simplified outline (SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2001 Nov 19 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. 60 50 6 3 5 1 830 +150 150 +150 V V V A A A mW C C C UNIT Philips Semiconductors Product specification 50 V low VCEsat NPN transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 VALUE 150 PBSS4350S UNIT K/W 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER CONDITIONS VCB = 50 V; IE = 0; Tj = 150 C emitter-base cut-off current DC current gain VEB = 5 V; IC = 0 VCE = 2 V; IC = 500 mA VCE = 2 V; IC = 1 A; note 1 VCE = 2 V; IC = 2 A; note 1 VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA IC = 1 A; IB = 50 mA IC = 2 A; IB = 200 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp 300 s; 0.02. equivalent on-resistance base-emitter saturation voltage transition frequency collector capacitance IC = 2 A; IB = 200 mA; note 1 IC = 2 A; IB = 200 mA; note 1 MIN. - - - 200 200 100 - - - - - - 100 - TYP. - - - - - - - - - 110 - - - - MAX. 100 50 100 - - - 90 170 290 <145 1.2 1.1 - 30 mV mV mV m V V MHz pF UNIT nA A nA collector-base cut-off current VCB = 50 V; IE = 0 base-emitter turn-on voltage VCE = 2 V; IC = 1 A; note 1 IC = 100 mA; VCE = 5 V; f = 100 MHz VCB = 10 V; IE = Ie = 0; f = 1 MHz 2001 Nov 19 3 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350S handbook, halfpage 600 MLD758 handbook, halfpage hFE 500 (1) 1.2 VBE (V) 1 MLD759 (1) 400 (2) 0.8 (2) 300 0.6 (3) 200 (3) 0.4 100 0.2 0 10 -1 1 10 102 103 104 I C (mA) 0 10 -1 1 10 102 103 104 I C (mA) VCE = 2 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. VCE = 2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. 103 handbook, halfpage VCEsat (mV) 102 (1) MLD760 handbook, halfpage 1.2 MLD761 VBEsat (V) 1 (1) 0.8 (2) 0.6 (2) (3) (3) 10 0.4 0.2 1 10 -1 1 10 102 103 104 I C (mA) 0 10 -1 1 10 102 103 104 I C (mA) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2001 Nov 19 4 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350S handbook, halfpage I 1200 MLD762 MLD763 C (mA) 1000 handbook, halfpage 5 IC (1) (1) (2) (3) (A) 4 (2) (3) (4) (5) (6) (7) (8) 800 (4) (5) 3 (9) 600 (6) (7) (8) (10) 2 400 (9) (10) 200 (11) (12) 1 0 0 Tamb = 25 C. (1) (2) (3) (4) IB = 3.96 nA. IB = 3.63 nA. IB = 3.30 nA. IB = 2.97 nA. (5) IB = 2.64 nA. (6) IB = 2.31 nA. (7) IB = 1.98 nA. (8) IB = 1.65 nA. (9) IB = 1.32 nA. (10) IB = 0.99 nA. (11) IB = 0.66 nA. (12) IB = 0.33 nA. 0.4 0.8 1.2 2 1.6 VCE (V) 0 0 Tamb = 25 C. (1) (2) (3) (4) IB = 150 mA. IB = 135 mA. IB = 120 mA. IB = 105 mA. (5) IB = 90 mA. (6) IB = 75 mA. (7) IB = 60 mA. (8) IB = 45 mA. (9) IB = 30 mA. (10) IB = 15 mA. 0.4 0.8 1.2 1.6 2 VCE (V) Fig.6 Collector current as a function of collector-emitter voltage; typical values. Fig.7 Collector current as a function of collector-emitter voltage; typical values. 103 handbook, halfpage RCEsat () 102 MLD764 10 1 (1) (2) 10 -1 (3) 10 -2 10 -1 IC/IB = 20. 1 10 102 103 104 I C (mA) (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.8 Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2001 Nov 19 5 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads PBSS4350S SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2001 Nov 19 6 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS PBSS4350S This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2001 Nov 19 7 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp8 Date of release: 2001 Nov 19 Document order number: 9397 750 08945 |
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