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CD4585BMS
December 1992
CMOS 4-Bit Magnitude Comparator
Pinout
CD4585BMS TOP VIEW
B2 A2 (A = B)OUT (A > B)IN (A < B)IN 1 2 3 4 5 6 7 8 16 VDD 15 A3 14 B3 13 (A > B)OUT 12 (A < B)OUT 11 B0 10 A0 9 B1
Features
* High Voltage Type (20V Rating) * Expansion to 8, 12, 16 . . .4N Bits by Cascading Units * Medium Speed Operation - Compares Two 4-Bit Words in 180ns (Typ.) at 10V * 100% Tested for Quiescent Current at 20V * Standardized Symmetrical Output Characteristics * 5V, 10V and 15V Parametric Ratings * Maximum Input Current of 1A at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC * Noise Margin (Over Full Package/Temperature Range) - 1V at VDD = 5V - 2V at VDD = 10V - 2.5V at VDD = 15V * Meets All Requirements of JEDEC Tentative Standard No. 13B, "Standard Specifications for Description of `B' Series CMOS Devices"
(A = B)IN A1 VSS
Functional Diagram
10 A0 7 2 15 4 6 5 11 B0 WORD "B" B1 B2 B3 9 1 14 13 3 12 A1 A2 A3 A>B A=B AApplications
* Servo Motor Controls * Process Controllers
WORD "A"
Description
CD4585BMS is a 4-bit magnitude comparator designed for use in computer and logic applications that require the comparison of two 4-bit words. This logic circuit determines whether one 4-bit word (Binary or BCD) is "less than", "equal to" or "greater than" a second 4-bit word. The CD4585BMS has eight comparing inputs (A3, B3, through A0, B0), three outputs (A < B, = B, A > B) and three cascading inputs (A < B, A = B, A > B) that permit system designers to expand the comparator function to 8, 12, 16 . . .4N bits. When a single CD4585BMS is used, the cascading inputs are connected as follows: (A < B) = low, (A = B) = high, (A > B) = high. Cascading thses units for comparision of more than 4 bits is accomplished as shown in Figure 9. The CD4585BMS is supplied in these 16-lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4T H1E H6W
CASCADING INPUTS
A>B A=B AVDD = 16
VSS = 8
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
File Number
3347
7-1259
Specifications CD4585BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 1/32 Inch (1.59mm 0.79mm) from case for 10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . . ja jc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 15V, No Load VDD = 15V, No Load (Note 3) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10A VSS = 0V, IDD = 10A VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Input Voltage Low (Note 2) Input Voltage High (Note 2) Input Voltage Low (Note 2) Input Voltage High (Note 2) VIL VIH VIL VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V 3 1, 2, 3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 +25oC, +25oC, LIMITS TEMPERATURE +25oC +125oC -55oC +25oC +125oC -55oC +25oC +125oC -55oC +125oC, +125oC, +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC 3.5 11 1.5 4 V V V V -55oC -55oC MIN -100 -1000 -100 14.95 0.53 1.4 3.5 -2.8 0.7 MAX 10 1000 10 100 1000 100 50 -0.53 -1.8 -1.4 -3.5 -0.7 2.8 UNITS A A A nA nA nA nA nA nA mV V mA mA mA mA mA mA mA V V V
PARAMETER Supply Current
SYMBOL IDD
CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND
VOH > VOL < VDD/2 VDD/2
NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max.
7-1260
Specifications CD4585BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS TEMPERATURE 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 +25oC +125oC, -55oC LIMITS MIN o
PARAMETER Propagation Delay Comparing Inputs to Outputs Propagation Delay Cascading Inputs to Outputs Transition Time
SYMBOL TPHL1 TPLH1 TPHL2 TPLH2 TTHL TTLH
CONDITIONS (NOTE 1, 2) VDD = 5V, VIN = VDD or GND
MAX 600 810 400 540 200 270
UNITS ns ns ns ns ns ns
+25oC +125 C, -55 C +25oC +125oC, -55oC
o
-
NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55oC, +25oC +125oC VDD = 10V, VIN = VDD or GND 1, 2 -55 C, +25 C +125oC VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC
oC o o
MIN 4.95 9.95 0.36 0.64 0.9 1.6 2.4 4.2 +7
MAX 5 150 10 300 10 600 50 50 -0.36 -0.64 -1.15 -2.0 -0.9 -1.6 -2.4 -4.2 3 -
UNITS A A A A A A mV mV V V mA mA mA mA mA mA mA mA mA mA mA mA mA mA V V
+125 Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) VOL VOL VOH VOH IOL5 VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, VOUT = 0.4V 1, 2 1, 2 1, 2 1, 2 1, 2
+25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1, 2
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1, 2
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1, 2
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
Input Voltage Low Input Voltage High
VIL VIH
VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V, VOH > 9V, VOL < 1V
1, 2 1, 2
7-1261
Specifications CD4585BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Propagation Delay Comparing Inputs to Outputs Propagation Delay Cascading Inputs to Outputs Transition Time SYMBOL TPHL1 TPLH1 TPHL2 TPLH2 TTHL TTLH CIN CONDITIONS VDD = 10V VDD = 15V VDD = 10V VDD = 15V VDD = 10V VDD = 15V Any Inputs NOTES 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2 TEMPERATURE +25oC +25 C +25oC +25oC +25oC +25 C +25
oC o o
MIN -
MAX 250 160 160 120 100 80 7.5
UNITS ns ns ns ns ns ns pF
Input Capacitance NOTES:
1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH VTN VTP VTP F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10A VDD = 10V, ISS = -10A VSS = 0V, IDD = 10A VSS = 0V, IDD = 10A VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN -2.8 0.2 VOH > VDD/2 MAX 25 -0.2 1 2.8 1 VOL < VDD/2 1.35 x +25oC Limit UNITS A V V V V V
ns
NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25oC limit. 4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER Supply Current - MSI-2 Output Current (Sink) Output Current (Source) SYMBOL IDD IOL5 IOH5A 1.0A 20% x Pre-Test Reading 20% x Pre-Test Reading DELTA LIMIT
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 IDD, IOL5, IOH5A READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A
7-1262
Specifications CD4585BMS
TABLE 6. APPLICABLE SUBGROUPS (Continued) CONFORMANCE GROUP PDA (Note 1) Final Test Group A Group B Subgroup B-5 Subgroup B-6 Group D MIL-STD-883 METHOD 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 Subgroups 1, 2, 3, 9, 10, 11 READ AND RECORD
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9 POST-IRRAD Table 4
CONFORMANCE GROUPS Group E Subgroup 2
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In 1 Note 1 Static Burn-In 2 Note 1 Dynamic BurnIn Note 1 Irradiation Note 2 NOTE: 1. Each pin except VDD and GND will have a series resistor of 10K 5%, VDD = 18V 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V 0.5V OPEN 3, 12, 13 3, 12, 13 3, 12, 13 GROUND 1, 2, 4 - 11, 14, 15 8 5 - 9, 11, 14, 15 8 VDD 16 1, 2, 4 - 7, 9 - 11, 14 - 16 1, 4, 16 1, 2, 4 - 7, 9 - 11, 14 - 16 3, 12, 13 2 10 9V -0.5V 50kHz 25kHz
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
1263
CD4585BMS Logic Diagram
*
A3 15 VDD
*
B3 14 VSS
*
A2 2
* INPUTS PROTECTED BY
CMOS PROTECTION NETWORK
*
B2 1
(A < B)OUT
*
A1 7
12
*
B1 9
*
A0 10
*
B0 11
*
(A < B)IN 5
*
(A = B)IN 6 (A = B)OUT 3 (A > B)OUT 13
*
(A > B)IN 4
FIGURE 1. LOGIC DIAGRAM TRUTH TABLE INPUTS COMPARING A3, B3 A3 > B3 A3 = B3 A3 = B3 A3 = B3 A3 = B3 A3 = B3 A3 = B3 A3 = B3 A3 = B3 A3 = B3 A3 < B3 X = Don't Care A2, B2 X A2 > B2 A2 = B2 A2 = B2 A2 = B2 A2 = B2 A2 = B2 A2 = B2 A2 = B2 A2 < B2 X A1, B1 X X A1 > B1 A1 = B1 A1 = B1 A1 = B1 A1 = B1 A1 = B1 A1 < B1 X X A0, B0 X X X A0 > B0 A0 = B0 A0 = B0 A0 = B0 A0 < B0 X X X AB 1 1 1 1 1 X X X X X X AB 1 1 1 1 1 0 0 0 0 0 0
Logic 1 = High Level
Logic 0 = Low Level
7-1264
CD4585BMS Typical Performance Characteristics
OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC
30 25 20 15 10 5
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 12.5 10.0 7.5 5.0 2.5 10V
10V
5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V 0
FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V -5 0
0 -5 -10 -15
0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
-10V
-20 -25
-10V
-10
-15V
-30
-15V
-15
FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
AMBIENT TEMPERATURE (TA) = +25oC TRANSITION TIME (tTHL, tTLH) (ns)
FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
PROPAGATION DELAY TIME (tPHL, tPLH) (ns) AMBIENT TEMPERATURE (TA) = +25oC
300 SUPPLY VOLTAGE (VDD) = 5V 200
200 SUPPLY VOLTAGE (VDD) = 5V
150
10V
100 10V 50 15V
100 15V
0 0
20
40 60 80 100 LOAD CAPACITANCE (CL) (pF)
0
20
40
60
80
100
LOAD CAPACITANCE (CL) (pF)
FIGURE 6. TYPICAL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE
FIGURE 7. TYPICAL PROPAGATION DELAY TIME ("COMPARING INPUTS" TO OUTPUTS) AS A FUNCTION OF LOAD CAPACITANCE
7-1265
CD4585BMS Typical Performance Characteristics
DYNAMIC POWER DISSIPATION (PD) (W) 104 8
6 4 2
(Continued)
AMBIENT TEMPERATURE (TA) = +25oC
103 8
6 4 2
SUPPLY VOLTAGE (VDD) = 15V
102 8
6 4 2
10V 10V 5V CL = 50pF CL = 15pF
2 4 68 2 4 68 2 4 68 2 4 68 2 4 68
10 8
6 4 2
0.1
1 10 102 103 CLOCK INPUT FREQUENCY (fIN) (kHz)
104
FIGURE 8. TYPICAL DYNAMIC POWER DISSIPATION AS A FUNCTION OF CLOCK INPUT FREQUENCY
A0 VDD
A1
A2
A3 VDD
A4
A5
A6
A7 VDD
A8
A9
A10 A11
CD4585BMS (A > B)OUT (A > B)IN (A = B)IN (A < B)IN (A = B)OUT (A < B)OUT
CD4585BMS
CD4585BMS
B0
B1
B2
B3
B4
B5
B6
B7
B8
B9
B10 B11
tp TOTAL = tp (COMPARE) + 2 x tp (CASCADE) , AT VDD = 10V INPUTS INPUTS
FIGURE 9. TYPICAL SPEED CHARACTERISTICS OF A 12-BIT COMPARATOR
Chip Dimensions and Pad Layout
Dimensions in parenthese are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch).
METALLIZATION: PASSIVATION: BOND PADS:
Thickness: 11kA - 14kA,
AL.
10.4kA - 15.6kA, Silane 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches
7-1266

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