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| BFR 280 NPN Silicon RF Transistor * For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA * fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 280 REs Q62702-F1298 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 8 10 10 2 10 1.2 mW 80 150 - 65 ... + 150 - 65 ... + 150 425 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 115 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFR 280 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 8 100 - V A 100 nA 100 A 1 30 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 3 mA, VCE = 5 V Semiconductor Group 2 Dec-11-1996 BFR 280 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 5 7.5 0.27 0.18 0.22 - GHz pF 0.45 dB 1.5 2 - IC = 6 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 1.5 mA, VCE = 5 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 1) Gms IC = 3 mA, VCE = 5 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 13 8 17 11.5 - IC = 3 mA, VCE = 5 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| Semiconductor Group 3 Dec-11-1996 BFR 280 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 6.472 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 25.609 1.6163 5.6909 1.0651 14.999 36.218 11.744 6.2179 1.1943 2.3693 0 3 V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 89.888 20.238 15 2.4518 0.70035 0.21585 0 0.30017 0 0 0.96275 V deg fF NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0801 15.596 0.83403 1.409 6.989 0.69773 0.2035 252.99 0.19188 0.75 1.11 300 fA fA V fF V eV K 0.073457 A 0.012696 A 0.031958 mA All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.85 0.51 0.69 0.61 0 0.49 73 84 165 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-11-1996 BFR 280 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 100 mW Ptot 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 C 150 TA ,TS TS TA Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 1 RthJS K/W P totmax/PtotDC D=0 0.005 0.1 0.2 0.05 0.1 0.2 0.5 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 - 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 5 Dec-11-1996 BFR 280 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 0.40 9.5 GHz 10V 8V 5V 7.0 3V 6.0 2V 5.0 4.0 pF 8.0 Ccb 0.30 fT 0.25 0.20 0.15 3.0 0.10 2.0 0.05 0.00 0 1.0 0.0 2 4 6 8 V VR 11 0 2 4 6 8 1V 0.7V mA IC 11 Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 13 dB 10V dB G 3V 16 3V G 11 10V 5V 3V 2V 10 14 2V 12 9 8 1V 0.7V 10 7 6 0.7V 8 0 2 4 6 8 mA IC 11 5 0 2 4 6 8 mA IC 11 Semiconductor Group 6 Dec-11-1996 BFR 280 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 18 dB 16 VCE = Parameter, f = 900MHz 20 IC=3mA 0.9GHz dBm 8V 5V 3V 12 2V G 15 14 IP 3 8 13 12 1.8GHz 11 0 10 9 1.8GHz 8 -8 7 6 0 2 4 6 8 V 12 -12 0 2 4 6 8 mA IC 11 -4 0.9GHz 4 1V V CE Power Gain Gma, Gms = f(f) VCE = Parameter 28 dB 24 Power Gain |S21|2= f(f) VCE = Parameter 20 IC=3mA dB IC=3mA G 22 20 18 16 14 12 10 8 6 4 0.0 0.5 1.0 1.5 2.0 2.5 10V 1V 0.7V GHz f 3.5 S21 16 14 12 10 8 6 10V 4 2 0.0 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Semiconductor Group 7 Dec-11-1996 |
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