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| SI4967DY Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) 0.023 @ VGS = - 4.5 V 0.030 @ VGS = - 2.5 V 0.045 @ VGS = - 1.8 V ID (A) - 7.5 - 6.7 - 5.4 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: SI4967DY SI4967DY-T1 (with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit - 12 "8 - 7.5 - 6.1 - 30 - 1.7 2.0 1.3 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Notes a. Surface Mounted on FR4 Board. b. t v10 sec. Document Number: 70813 S-31989--Rev. C, 13-Oct-03 www.vishay.com t v 10 sec Steady State Symbol RthJA Typical 93 Maximum 62.5 Unit _C/W 1 SI4967DY Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 12 V, VGS = 0 V VDS = - 12 V, VGS = 0 V, TJ = 70_C VDS w - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 7.5 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 6.7 A VGS = - 1.8 V, ID = - 5.4 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 10 V, ID = - 7.5 A IS = - 1.7 A, VGS = 0 V - 20 0.019 0.024 0.033 27 0.7 - 1.2 0.023 0.030 0.045 S V W - 0.45 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.7 A, di/dt = 100 A/ms VDD = - 6 V, RL = 10 W ID ^ - 1 A, VGEN = - 10 V, RG = 6 W VDS = - 6 V, VGS = - 10 V, ID = - 7.5 A 35 7 7 25 40 210 95 50 50 80 350 150 80 ns 55 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 70813 S-31989--Rev. C, 13-Oct-03 SI4967DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 30 Output Characteristics VGS = 5 thru 2.5V 30 Transfer Characteristics 24 I D - Drain Current (A) 2V 24 I D - Drain Current (A) 18 18 12 1.5 V 6 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 12 TC = 125_C 25_C - 55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 0.10 On-Resistance vs. Drain Current 7000 6000 Capacitance r DS(on) - On-Resistance ( W ) 0.08 C - Capacitance (pF) 5000 4000 3000 2000 1000 0 0 6 12 18 24 30 0 Crss 3 6 Ciss 0.06 VGS = 1.8 V VGS = 2.5 V 0.04 0.02 VGS = 4.5 V 0.00 Coss 9 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 7.5 A 1.5 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 7.5 A 1.2 3 2 r DS(on) - On-Resistance (W) (Normalized) 16 24 32 40 4 0.9 1 0 0 8 Qg - Total Gate Charge (nC) Document Number: 70813 S-31989--Rev. C, 13-Oct-03 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 SI4967DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage 10 r DS(on) - On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 0.08 0.06 0.04 ID = 7.5 A 0.02 TJ = 25_C 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.00 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) 0.2 Power (W) 0.1 0.0 - 0.1 - 0.2 - 50 ID = 250 mA 30 25 Single Pulse Power 20 15 10 5 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 93_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Square Wave Pulse Duration (sec) Document Number: 70813 S-31989--Rev. C, 13-Oct-03 www.vishay.com 4 |
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