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| Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 2.300 (Typ.) 1 2 3 SSP5N90A BVDSS = 900 V RDS(on) = 2.9 ID = 5 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds Value 900 5 3.2 1 O Units V A A V mJ A mJ V/ns W W/ C 20 + 30 _ 529 5 14 1.5 140 1.12 - 55 to +150 O 1 O 1 O 3 O 2 C 300 Thermal Resistance Symbol R R R JC CS JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 0.89 -62.5 Units C /W Rev. B (c)1999 Fairchild Semiconductor Corporation SSP5N90A Electrical Characteristics (TC=25 Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( "Miller" ) Charge N-CHANNEL POWER MOSFET C unless otherwise specified) Min. Typ. Max. Units 900 -2.0 -----------------1.14 ------4.0 105 43 21 39 94 32 54 9.0 25.0 --3.5 100 -100 25 250 2.9 -125 50 50 90 200 75 70 --nC ns A V V nA Test Condition VGS=0V,ID=250A See Fig 7 VDS=5V,ID=250A VGS=30V VGS=-30V VDS=900V VDS=720V,TC=125 C VGS=10V,ID=2.5A VDS=50V,ID=2.5A 4 O* 4 O V/ C ID=250A pF 1110 1440 VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=450V,ID=5A, RG=13.6 See Fig 13 VDS=720V,VGS=10V, ID=5A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------540 5.62 5 20 1.4 --A V ns C Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=5A,VGS=0V TJ=25 C ,IF=5A diF/dt=100A/s 4 O Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 O L=40mH, I AS=5A, VDD=50V, RG=27, Starting T J =25 C _ _ < 3 O ISD < 5A, di/dt <120A/ s, VDD _ BVDSS , Starting T J =25 C O 5 O Essentially Independent of Operating Temperature 4 Pulse Test : Pulse Width = 250 _ s, Duty Cycle < 2% |
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