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| Power Transistors 2SC3980, 2SC3980A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q q q q 0.7 q 16.20.5 12.5 3.5 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 900 1000 900 1000 800 7 6 4 2 70 3 150 -55 to +150 Unit V 15.00.3 11.00.2 5.00.2 3.2 21.00.5 15.00.2 3.20.1 2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC3980 2SC3980A 2SC3980 VCES VCEO VEBO ICP IC IB Ta=25C PC Tj Tstg Symbol VCBO emitter voltage 2SC3980A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Junction temperature Storage temperature V V V A A A W C C 1:Base 2:Collector 3:Emitter TOP-3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC3980 2SC3980A (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VCB = 1000V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 2A IC = 2A, IB = 0.4A IC = 2A, IB = 0.4A VCE = 5V, IC = 0.2A, f = 1MHz IC = 2A, IB1 = 0.4A, IB2 = - 0.8A, VCC = 250V 15 0.7 2.5 0.3 800 8 6 1.5 1.5 V V MHz s s s min typ max 50 50 50 Unit A A V 1 Power Transistors PC -- Ta 80 6 TC=25C (1) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3W) IB=1000mA 2SC3980, 2SC3980A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 25C 0.3 0.1 0.03 0.01 0.01 0.03 TC=100C -25C VCE(sat) -- IC Collector power dissipation PC (W) 70 60 50 40 30 20 10 5 Collector current IC (A) 4 500mA 400mA 3 300mA 200mA 2 150mA 100mA (2) 1 (3) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 50mA 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=5 1000 VCE=5V 100 fT -- IC VCE=5V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 300 Transition frequency fT (MHz) 1 3 10 30 10 100 TC=100C 25C 10 3 30 3 1 TC=100C -25C 10 -25C 1 0.3 25C 3 0.3 0.1 0.01 0.03 0.1 0.3 1 3 10 1 0.01 0.03 0.1 0.3 0.1 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 1000 100 IE=0 f=1MHz TC=25C 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=200V TC=25C Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25C Collector output capacitance Cob (pF) Switching time ton,tstg,tf (s) 300 Collector current IC (A) 10 3 10 3 1 0.3 0.1 0.03 0.01 ICP t=10ms IC DC 100 tstg 1 0.3 0.1 0.03 ton tf 30 10 3 1 1 3 10 30 100 0.01 0 1 2 3 4 5 6 7 8 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 8 7 Lcoil=100H IC/IB=5 (IB1=-IB2) TC=25C 2SC3980, 2SC3980A Reverse bias ASO measuring circuit L coil IB1 T.U.T IC Collector current IC (A) 6 5 4 3 2 1 0 0 ICP IC Vin -IB2 VCC 200 400 600 800 1000 1200 1400 1600 Collector to emitter voltage VCE (V) 2SC3980A tW Vclamp 2SC3980 Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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