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2SC4301
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4301 900 800 7 7(Pulse14) 3.5 80(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=-1A VCB=10V, f=1MHz
(Ta=25C) 2SC4301 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 105typ V V MHz pF Unit
External Dimensions FM100(TO3PF)
0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6
A
V
23.00.3 9.50.2
A
a b
16.2
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL () 83 IC (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.45 IB2 (A) -1.5 ton (s) 1max tstg (s) 5max tf (s) 1max
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
1A
700m A
VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V ) Base-Emitter Saturation Voltage V B E (s at)( V) (IC/IB=5)
I C - V BE Temperature Characteristics (Typical)
7 (VCE=4V)
6
500mA
1
-55C ) (Case Temp
ase Tem p)
V B E( sat) Collector Current I C (A)
6
Collector Current I C (A)
mp)
4
300 mA
25C (C
4
Temp
)
(Cas
125C
2
2
12
5
C
V C E( sat) 0 0.02 0.05 0.1 0.5 1
-5
0
25
5C
0
1
2
3
4
57
0
0
0.2
0.4
0.6
0.8
-55C (C
eT
(C
C
25C
IB=100mA
as
(Case
emp
125C
(C
ase Tem
200mA
emp ase T
)
e Te
)
p)
1.0
3.0
1.2
Collector-Emitter Voltage V C E( V)
Collector Current I C( A)
Base-Emittor Voltage V B E( V)
(V C E= 4V) 50 DC C urrent G ain h FE 10
j - a( C /W )
hFE - IC Characteristics (Typical)
5
t on *tstg* t f - I C Characteristics (Typical)
ton*t s t g*t f ( s)
j-a - t Characteristics
2
12
VCC 250V IC:IB1:IB2=2:0.3:-1 Const.
Transient Thermal Resistance
25C
C
5
tstg
1
-55C
Sw it ching Time
0.5
1 0.5 t on 0.2 0.1
tf
10
5 0.02
0.05
0.1
0.5
1
5
7
0.5
1
5
7
0.1
1
10 Time t(ms)
100
1000
Collector Current I C( A)
Collector Current I C( A)
Safe Operating Area (Single Pulse)
20 10
10 0 s
Reverse Bias Safe Operating Area
20 10 5 Collect or Cur ren t I C( A) 80
P c - T a Derating
Ma xim um Powe r Dissipation P C( W)
Co lle ctor Cu rren t I C (A)
5
60
W ith In fin ite he
40
at si
1
1 Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty :less than1%
nk
0.5
Without Heatsink Natural Cooling
0.5
20
Without Heatsink 0.1 50 100 500 1000 0.1 50 100 500 1000 3.5 0 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E( V)
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
99

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