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| Memory ICs Reset IC with battery backup function BA6129AF / BA6162 / BA6162F The BA6129AF, BA6162, and BA6162F are reset ICs with a battery backup function, designed for equipment using SRAMs and other similar components. These ICs are configured of a reset signal and CS signal output unit and a power supply switching unit. If the BA6129AF detects that the power supply has dropped to 3.5V or lower, it outputs the CS, CSB, and Reset signals to set the SRAM in backup mode. If the voltage drops to 3.3V or lower, the power supply switches to the battery. With the BA6162 and BA6162F, in the same way, a power supply of 4.2V is detected, and if the voltage drops to 3.3V or lower, the power supply switches to the battery. These ICs allow SRAMs to be write protected and allow the system to be reset, in addition to switching between the power supply and the battery. *Applications SRAMs (cards, cassettes, facsimile machines, copiers, word processors, personal computers, etc.) Equipment using *Features with battery backup function. 1) Equipped 2) Equipped with both CS signals (CS and CSB) and Reset signals. 3) Low current dissipation when powered from battery. 4) Low voltage loss when powered from battery. 5) Smooth switching between power supply and battery. *Absolute maximum ratings (Ta = 25C) Parameter Power supply voltage Output current 1 Output current 2 Power dissipation Operating temperature Storage temperature Symbol VCC IOUT1 IOUT2 Pd Topr Tstg Limits 7.0 - 80 (BA6129AF) - 40 (BA6162 / BA6162F) - 200 9001 (BA6162) 5502 (BA6129AF) (BA6162F) - 20 ~ + 75 - 40 ~ + 125 C C Unit V mA A mW IOUT1 indicates the output current on the VCC side, and IOUT2 the output current on the VBAT side. 1 Reduced by 9.0mW for each increase in Ta of 1C over 25C. 2 Reduced by 5.5mW for each increase in Ta of 1C over 25C. 1 Memory ICs BA6129AF / BA6162 / BA6162F *Block diagram VCC 8 N.C. 7 Vo 6 CSB 5 VREF + - + - + - 1 GND 2 Reset 3 CS 4 VBAT *Pin descriptions Pin No. 1 2 3 4 5 6 7 8 Pin name GND Reset CS VBAT CSB VO N.C. VCC Power supply voltage Substrate GND Reset output CS output Battery power supply CSB output Power supply output -- Function *Input / output circuit VCC 2 VCC Pin 5 CSB output VCC 6 Pin 2 Reset output Pin 3 CS output 3 Pin 6 Power supply 5 GND output GND GND Pin 4 Battery power supply Pin 8 Power supply (VCC) Pin 6 Power supply output 8 4 6 GND 2 Memory ICs BA6129AF / BA6162 / BA6162F characteristics *Electrical (unless otherwise noted, Ta = 25C, VRRES = VCC = 5V, RRES = 10k) BA6129AF Parameter No-load current dissipation I / O voltage differential 1 Vo output voltage 1 Vo output voltage 2 Vo output voltage 3 Detection voltage Detection hysteresis voltage Reset output low level voltage Reset leakage current Reset operating limit voltage CS output low level voltage CS output high level voltage CSB output low level voltage CSB output high level voltage Detection voltage temperature characteristic Switching voltage Switching hysteresis voltage Switching voltage temperature characteristic Backup current dissipation I / O voltage differential 2 Vo output voltage 4 Vo output voltage 5 Vo output voltage 6 Reverse current Not designed for radiation resistance. Symbol ICC VSAT1 VO1 VO2 VO3 VS VSH VRESL IRESH VOPL VCSL VCSH VCSBL VCSBH VS VB VBH VB ICCB VSAT2 VO4 VO5 VO6 IOR Min. -- -- 4.95 4.70 4.50 3.35 -- -- -- -- -- 4.9 -- Typ. -- 0.03 4.97 4.90 4.86 3.50 100 -- -- 0.8 -- -- -- Max. 2.0 0.05 -- -- -- 3.65 -- 0.4 0.1 1.2 0.1 -- 0.1 -- + 0.05 3.45 -- + 0.05 0.5 0.30 -- -- -- 0.1 Unit mA V V V V V mV V A V V V V V % / C V mV % / C A V V V V A Conditions VCC = 5V, VBAT = 3V VCC = 5V, VBAT = 3V, IO = - 1mA VCC = 5V, VBAT = 3V, IO = - 1mA VCC = 5V, VBAT = 3V, IO = - 15mA VCC = 5V, VBAT = 3V, IO = - 30mA VCC = HL VCC = LH VCC = 3V VCC = 5V, VRRES = 7V VCC = HL, VRES 0.4V VCC = 3V, VBAT = 3V, ICS = + 1A VCC = 5V, VBAT = 3V, ICS = - 1A VCC = 5V, VBAT = 3V, ICSB = + 1A VCC = 3V, VBAT = 3V, ICSB = - 1A -- VCC = HL, VBAT = 3V, RO = 200k VCC = LH, VBAT = 3V, RO = 200k -- VCC = GND, VBAT = 3V VCC = GND, VBAT = 3V, IO = - 1A VCC = GND, VBAT = 3V, IO = - 1A VCC = GND, VBAT = 3V, IO = - 100A IO = - 80mA VCC = 5V, VBAT = GND Vo - 0.1 -- - 0.05 3.15 -- - 0.05 -- -- 2.70 2.60 VCC - 0.5 -- -- 3.30 100 -- -- 0.20 2.80 2.67 -- -- (Note) IO, ICS, and ICSB are + when flowing toward the pin and - when flowing away from the pin. 3 Memory ICs BA6129AF / BA6162 / BA6162F BA6162 / F (unless otherwise noted, Ta = 25C, VRRES = VCC = 5V, RRES = 10k) Parameter No-load current dissipation I / O voltage differential 1 Vo output voltage 1 Vo output voltage 2 Vo output voltage 3 Detection voltage Detection hysteresis voltage Reset output low level voltage Reset leakage current Reset operating limit voltage CS output low level voltage CS output high level voltage CSB output low level voltage CSB output high level voltage Detection voltage temperature characteristic Switching voltage Switching hysteresis voltage Switching voltage temperature characteristic Backup current dissipation I / O voltage differential 2 Vo output voltage 4 Vo output voltage 5 Vo output voltage 6 Reverse current Not designed for radiation resistance. Symbol ICC VSAT1 VO1 VO2 VO3 VS VSH VRESL IRESH VOPL VCSL VCSH VCSBL VCSBH KVS VB VBH KVB ICCB VSAT2 VO4 VO5 VO6 IOR Min. -- -- 4.95 4.70 4.50 4.00 -- -- -- -- -- 4.9 -- Vo - 0.1 - 0.05 3.15 -- - 0.05 -- -- 2.70 2.60 VCC - 0.5 -- Typ. -- 0.03 4.97 4.90 4.86 4.20 100 -- -- 0.8 -- -- -- -- -- 3.30 100 -- -- 0.20 2.80 2.67 -- -- Max. 2.0 0.05 -- -- -- 4.40 -- 0.4 0.1 1.2 0.1 -- 0.1 -- + 0.05 3.45 -- + 0.05 0.5 0.03 -- -- -- 0.1 Unit mA V V V V V mV V A V V V V V % / C V mV % / C A V V V V A Conditions VCC = 5V, VBAT = 3V VCC = 5V, VBAT = 3V, IO = - 1mA VCC = 5V, VBAT = 3V, IO = - 1mA VCC = 5V, VBAT = 3V, IO = - 15mA VCC = 5V, VBAT = 3V, IO = - 30mA VCC = HL VCC = LH VCC = 3.7V VCC = 5V, VRRES = 7V VCC = HL, VRES 0.4V VCC = 3.7V, VBAT = 3V, ICS = + 1A VCC = 5V, VBAT = 3V, ICS = - 1A VCC = 5V, VBAT = 3V, ICSB = + 1A VCC = 3.7V, VBAT = 3V, ICSB = - 1A -- VCC = HL, VBAT = 3V, RO = 200k VCC = LH, VBAT = 3V, RO = 200k -- VCC = GND, VBAT = 3V VCC = GND, VBAT = 3V, IO = - 1A VCC = GND, VBAT = 3V, IO = - 1A VCC = GND, VBAT = 3V, IO = - 100A IO = - 40mA VCC = 5V, VBAT = GND (Note) IO, ICS, and ICSB are + when flowing toward the pin and - when flowing away from the pin. 4 Memory ICs BA6129AF / BA6162 / BA6162F *Measurement circuit VSAT = VCC - VO IO RO 200k VO V (VB) A ICC VCC (VS.VB.VOPL) RRES 10k 1 2 3 4 A IRES A VRES V VCS V ICS VBAT ICCB.IOR BA6129AF (BA6162 / F) VRRES 8 7 6 5 ICSB VCSB V GND (VOPL) (VS) Fig. 1 5 Memory ICs BA6129AF / BA6162 / BA6162F *Circuit operation distinct functions, a logic output function and a power supply switching function. These ICs have two The logic output circuit consists of the following: (1) Reset output (NPN Tr open collector) (2) CS output (PNP Tr open collector + pull-down resistor) (3) CSB output (NPN Tr open collector + pull-up resistor) The power supply switching circuit consists of a PNP power transistor and an SBD (Schottky barrier diode). The normal power supply VCC and the battery backup power supply (VBAT) are both connected to the switching circuit. When the PNP power transistor is turned on and off, the IC power is switched from the normal power supply to the battery backup power supply, and vice versa. The power supply voltage detection circuit consists of a standard voltage source VREF and a hysteresis comparator. The power supply VCC is detected using a split resistance. When the power supply voltage drops below the detection voltage (BA6129AF: VS = 3.5Vtyp. when VCC drops and VS + 0.1Vtyp. when VCC rises; BA6162 / F: VS = 4.2Vtyp. when VCC drops, and VS + 0.1Vtyp. when VCC rises), the Reset signal (Low) and the CS signal (CS-Low, CSB-High) are output by the logic output function, and the SRAM (or other memory device) is switched to backup mode. If the power supply VCC drops further and goes below the switching voltage (BA6129AF and BA6162 / F: VB = 3.3Vtyp. when VCC drops, VB + 0.1Vtyp. when VCC rises), the SBD develops a forward bias because the PNP power transistor is off. The power supply output VO switches from the power supply VCC to the battery power supply (VBAT). When the normal power supply VCC rises, the above process is reversed. (BA6129AF) (BA6162 / F) VCC 5V VS [3.5VTyp.] [4.2VTyp.] [3.3VTyp.] VB OV VO (Vcc) [5V--VSAT1] VO VO (BAT) [3V--VSAT2] OV VRESH [ RESET VCC] VRESL [ VCSH [ CS GND] VCC] VCSL [ GND] CSB VCSBH [ VO] VCSBL [ GND] Fig. 2 Timing chart 6 Memory ICs BA6129AF / BA6162 / BA6162F *Application example Vcc 5V C1 10F C2 8 7 6 5 0.01F SRAM VDD Vref + - + R1 10k + - - SRAM CEB 1 2 3 4 SRAM CE BATTERY 3V CPU Reset Fig. 3 *Operation notesVCC (1) Power supply These ICs are designed to operate with at VCC = 5V, but can also operate at VCC values of other than 5V. However, the following conditions must be met: (equation) VCC VS { VCC+-VSH < < 5V< VCCMax. VBAT (2) Battery voltage VBAT These ICs are designed to operate with at VBAT = 3V, but can also operate at VBAT values of other than 3V. However, the following conditions must be met: (equation) VBAT VB { VCC - Memory ICs BA6129AF / BA6162 / BA6162F *Electrical characteristic curves (BA6129AF) CHIP SELECT BAR VOLTAGE: VCSB (V) 10 CHIP SELECT VOLTAGE: VCS (V) 9 8 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 8 9 10 8 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 8 9 10 RESET VOLTAGE: VCSB (V) VBAT = 3V RRES = 10k VRES = VCC 10 9 VBAT = 3V RRES = 10k VRES = VCC 10 9 8 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 8 9 10 RRES = 10k VRES = VCC POWER SUPPLY VOLTAGE: VCC (V) POWER SUPPLY VOLTAGE: VCC (V) POWER SUPPLY VOLTAGE: VCC (V) Fig. 4 CS output voltage vs. power supply voltage Fig. 5 CSB output voltage vs. power supply voltage Fig. 6 Reset output voltage vs. power supply voltage 10 9 OUTPUT VOLTAGE: VO (V) 8 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 8 9 10 VBAT = 3V RO = 200k RRES = 10k VRES = VCC 5.0 VCC = 5V VBAT = 3V RRES = 10k VRES = VCC 2.9 VCC = GND VBAT = 3V RRES = 10k VRES = VCC 2.8 4.8 4.6 OUTPUT VOLTAGE: VO (V) 100 OUTPUT VOLTAGE: VO (V) 2.7 4.4 4.2 0 20 40 60 80 2.6 0 50 100 150 200 250 POWER SUPPLY VOLTAGE: VCC (V) OUTPUT CURRENT: IO (mA) OUTPUT CURRENT: IO (A) Fig. 7 Output voltage vs. power supply voltage Fig. 8 Output voltage vs. output current (!) (when power supply is detected) Fig. 9 Output voltage vs. output current (@) (when using battery backup) *Electrical characteristic curves (BA6162 / F) CHIP SERECT BAR VOLTAGE: VCSB (V) 10 CHIP SELECT VOLTAGE: VCS (V) 8 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 8 9 10 RESET VOLTAGE: VRES (V) VBAT = 3V 9 RRES = 10k VRES = VCC 8 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 8 9 10 9 VBAT = 3V RRES = 10k VRES = VCC 10 9 8 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 8 9 10 RRES = 10k VRES = VCC POWER SUPPLY VOLTAGE: VCC (V) POWER SUPPLY VOLTAGE: VCC (V) POWER SUPPLY VOLTAGE: VCC (V) Fig. 10 CS output voltage vs. power supply voltage Fig. 11 CSB output voltage vs. power supply voltage Fig. 12 Reset output voltage vs. power supply voltage 8 Memory ICs BA6129AF / BA6162 / BA6162F 10 9 OUTPUT VOLTAGE: VO (V) 8 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 8 9 10 VBAT = 3V RO = 200k RRES = 10k VRES = VCC 5.0 OUTPUT VOLTAGE: VO (V) VCC = 5V VBAT = 3V RRES = 10k VRES = VCC OUTPUT VOLTAGE: VO (V) 2.9 VCC = GND VBAT = 3V RRES = 10k VRES = VCC 4.9 2.8 4.8 2.7 4.7 0 10 20 30 40 50 2.6 0 50 100 150 200 250 POWER SUPPLY VOLTAGE: VCC (V) OUTPUT CURRENT: IO (mA) OUTPUT CURRENT: IO (A) Fig. 13 Output voltage vs. power supply voltage Fig. 14 Output voltage vs. output current (!) (when power supply is detected) Fig. 15 Output voltage vs. output current (@) (when using battery backup) *External dimensions (Units: mm) BA6129AF, BA6162F 5.0 0.2 8 6.2 0.3 4.4 0.2 5 8 BA6162 9.3 0.3 5 6.5 0.3 1 4 7.62 0.15 0.1 1.5 0.1 3.2 0.2 3.4 0.3 1 4 0.51Min. 0.11 1.27 0.4 0.1 0.3Min. 0.15 0.3 0.1 2.54 0.5 0.1 0~15 SOP8 DIP8 9 |
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