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| DISCRETE SEMICONDUCTORS DATA SHEET BFS520 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability * SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz. PINNING PIN 1 2 3 base emitter collector DESCRIPTION Code: N2 Top view 1 BFS520 handbook, 2 columns 3 2 MBC870 Fig.1 SOT323. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 118 C; note 1 IC = 20 mA; VCE = 6 V; Tj = 25 C IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C Ic = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C Ic = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C RBE = 0 CONDITIONS open emitter MIN. - - - - 60 - - - TYP. - - - - 120 9 15 1.1 MAX. 20 15 70 300 250 - - 1.6 GHz dB dB UNIT V V mA mW LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 118 C; note 1 RBE = 0 open collector CONDITIONS open emitter - - - - - -65 - MIN. MAX. 20 15 2.5 70 300 150 175 UNIT V V V mA mW C C September 1995 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistor THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C, unless otherwise specified. SYMBOL ICBO hFE Ce Cc Cre fT GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance feedback capacitance transition frequency CONDITIONS IE = 0; VCE = 6 V IC = 20mA; VCE = 6 V IC = ic = 0; VEB = 0.5 V; f = 1 MHz IE = ie = 0; VCB = 6 V; f = 1 MHz IC = 0; VCB = 6 V; f = 1 MHz IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C MIN. - 60 - - - - - - 13 - - - - - TYP. - 120 1 0.5 0.4 9 15 9 14 1.1 1.6 1.9 17 26 PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 118 C; note 1 BFS520 THERMAL RESISTANCE 190 K/W MAX. 50 250 - - - - - - - 1.6 2.1 - - - UNIT nA pF pF pF GHz dB dB dB dB dB dB dBm dBm maximum unilateral power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; (note 1) Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C S212 F insertion power gain noise figure IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C PL1 ITO Notes output power at 1 dB gain compression third order intercept point Ic = 20 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 C note 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 G UM = 10 log ------------------------------------------------------------- dB. 2 2 1 - S 11 1 - S 22 2. IC = 20 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at f(2p-q) = 898 MHz and at f(2q-p) = 904 MHz. 2 September 1995 3 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 MRC030 - 1 MRC028 400 handbook, halfpage P tot (mW) 300 handbook, halfpage 200 h FE 150 200 100 100 50 0 0 50 100 150 Ts ( o C) 200 0 10-2 10-1 1 10 I C (mA) 102 VCE = 6 V; Tj = 25 C. Fig.2 Power derating curve. Fig.3 DC current gain as a function of collector current. MRC021 MRC022 0.7 handbook, halfpage C re (pF) 0.6 0.5 handbook, halfpage f 12 T (GHz) 10 VCE = 8 V 8 0.4 6 0.3 4 0.2 0.1 0 0 2 4 6 8 10 VCB (V) 2 3V 0 1 10 I C (mA) 100 IC = 0; f = 1 MHz. f = 1 GHz; Tamb = 25 C. Fig.4 Feedback capacitance as a function of collector-base voltage. Fig.5 Transition frequency as a function of collector current. September 1995 4 Philips Semiconductors Product specification NPN 9 GHz wideband transistor In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. handbook, halfpage handbook, halfpage MRC027 BFS520 20 25 gain (dB) 20 MRC026 G UM (dB) MSG 18 15 16 VCE = 6 V 10 3V 14 5 12 0 10 0 10 20 I C (mA) 30 VCE = 6 V; f = 2 GHz; Tamb = 25 C. 0 10 20 I C (mA) 30 G max G UM VCE = 6 V; f = 900 MHz; Tamb = 25 C. Fig.6 Maximum unilateral power gain as a function of collector current. Fig.7 Gain as a function of collector current. handbook, halfpage 50 gain (dB) 40 MRC024 MRC025 handbook, halfpage 50 G UM gain (dB) 40 G UM 30 MSG 20 G max 30 MSG 20 G max 10 10 0 10-2 10-1 1 f (GHz) 10 0 10-2 10-1 1 f (GHz) 10 IC = 5 mA; VCE = 6 V; Tamb = 25 C. IC = 20 mA; VCE = 6 V; Tamb = 25 C. Fig.8 Gain as a function of frequency. Fig.9 Gain as a function of frequency. September 1995 5 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 MRC029 MRC023 4 handbook, halfpage F (dB) 3 f = 2 GHz 2 900 MHz 500 MHz handbook, halfpage 4 F (dB) 3 I C = 20 mA 5 mA 2 1 1 0 1 10 I C (mA) 102 0 10-1 1 f (GHz) 10 VCE = 6 V; Tamb = 25 C. VCE = 6 V; Tamb = 25 C. Fig.10 Minimum noise figure as a function of collector current. Fig.11 Minimum noise figure as a function of frequency. September 1995 6 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 handbook, full pagewidth stability circle 90 1.0 1 135 pot. unst. region 0.5 2 45 0.8 0.6 0.4 0.2 0.2 Fmin = 1. 1 dB OPT 0.2 0.5 1 F = 1.5 dB 2 5 5 180 0 0 0 0.2 F = 2 dB F = 3 dB 0.5 1 2 5 -135 -45 MRC077 1.0 -90 IC = 5 mA; VCE = 6 V; f = 900 MHz; Zo = 50 . Fig.12 Noise circle. handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 F = 3 dB F = 2.5 dB F = 2 dB Fmin = 1. 9 dB 180 0 0.2 MS 0.5 OPT 1 2 5 0 0.4 0.2 0 0.2 5 Gmax = 9.1 dB 0.2 G = 8,5 dB G = 8 dB G = 7 dB 5 -135 0.5 1 2 -45 MRC078 1.0 -90 IC = 5 mA; VCE = 6 V; f = 2 GHz; Zo = 50 . Fig.13 Noise circle. September 1995 7 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 1 2 5 0 0 0.2 3 GHz 180 0.2 0.5 5 0 40 MHz 0.2 5 -135 0.5 1 2 -45 MRC066 1.0 -90 IC = 20 mA; VCE = 6 V; Zo = 50 . Fig.14 Common emitter input reflection coefficient (S11). handbook, full pagewidth 90 135 45 40 MHz 180 50 40 30 20 10 3 GHz 0 -135 -45 -90 IC = 20 mA; VCE = 6 V. MRC067 Fig.15 Common emitter forward transmission coefficient (S21). September 1995 8 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 handbook, full pagewidth 90 135 45 3 GHz 180 0.5 40 MHz 0.4 0.3 0.2 0.1 0 -135 -45 -90 IC = 20 mA; VCE = 6 V. MRC060 Fig.16 Common emitter reverse transmission coefficient (S12). handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 0 0 0.2 5 40 MHz 3 GHz 0.2 5 -135 0.5 1 2 -45 MRC061 1.0 -90 IC = 20 mA; VCE = 6 V; Zo = 50 . Fig.17 Common emitter output reflection coefficient (S22). September 1995 9 Philips Semiconductors Product specification NPN 9 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads BFS520 SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 September 1995 10 Philips Semiconductors Product specification NPN 9 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFS520 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 11 |
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