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| Multi TOPLED(R) LSS T670, LOO T670, LYY T670 LGG T670, LPP T670 Besondere Merkmale q q q q q q q q Features q q q q q q q q P-LCC-4 package color of package: white for use as optical indicator both chips can be controlled separately for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and soldering methods available taped on reel (8 mm tape) load dump resistant acc. to DIN 40839 Semiconductor Group 1 11.96 VPL06837 Gehausebauform: P-LCC-4 Gehausefarbe: wei als optischer Indikator einsetzbar beide Leuchtdiodenchips getrennt ansteuerbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestuck- und Lottechniken geeignet gegurtet (8-mm-Filmgurt) Storimpulsfest nach DIN 40839 LSS T670, LOO T670, LYY T670 LGG T670, LPP T670 Typ Type Emissions- Farbe der farbe Lichtaustrittsflache Color of Color of the Emission Light Emitting Area super-red/ super-red orange colorless clear colorless clear colorless clear colorless clear colorless clear Lichtstarke1) Lichtstrom Bestellnummer Luminous Intensity1) IF = 10 mA I V (mcd) 4.0 (8 typ.) 4.0 (8 typ.) 4.0 (8 typ.) 4.0 (10 typ.) 2.5 (5 typ.) Luminous Flux IF = 10 mA V (mlm) 24 (typ.) 24 (typ.) 24 (typ.) 30 (typ.) 15 (typ.) Ordering Code s LSS T670-JO Q62703-Q2902 Q62703-Q2903 Q62703-Q2904 Q62703-Q2905 Q62703-Q2906 s LOO T670-JO orange/ s LYY T670-JO LGG T670-JO LPP T670-HO yellow/ yellow green/ green pure green/ pure green s Not for new design / Nicht fur Neuentwicklungen Streuung der Lichtstarke in einer Verpackungseinheit IV max / IV min 2.0.1) Streuung der Lichtstarke in einer LED IV max / IV min 2.0. 1) Bei MULTILED(R) mit 2 gleichfarbigen Chips in einem Gehause wird die Helligkeitsgruppe aus dem Mittelwert der Lichtstarken ermittelt. Luminous intensity ratio in one packaging unit IV max / IV min 2.0.1) Luminous intensity ratio in one LED IV max / IV min 2.0. 1) In case of MULTILED(R) with two chips of the same color in one package, the mean of the brightness determines the brightness group of the LED. Semiconductor Group 2 LSS T670, LOO T670, LYY T670 LGG T670 LPP T670 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspanung Reverse voltage Verlustleistung Power dissipation Warmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgroe 16 mm2) mounted on PC board*) (pad size 16 mm2) *) PC-board: FR4 1) nur ein Chip betrieben 2) beide Chips betrieben 1) 2) Symbol Symbol Werte Values - 55 ... + 100 - 55 ... + 100 + 100 30 0.5 Einheit Unit C C C mA A Top Tstg Tj IF IFM VR Ptot 5 100 V mW Rth JA1) Rth JA2) 480 650 K/W K/W one system on both systems on simultaneously Notes Die angegebenen Grenzdaten gelten fur einen Chip. The stated maximum ratings refer to one chip. Semiconductor Group 3 LSS T670, LOO T670, LYY T670 LGG T670, LPP T670 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 10 mA Dominantwellenlange Dominant wavelength IF = 10 mA Symbol Symbol LS LO 610 Werte Values LY 586 LG 565 LP 557 nm 635 Einheit Unit peak (typ.) (typ.) (typ.) (typ.) dom 628 605 590 570 560 nm Spektrale Bandbreite bei 50 % Irel max (typ.) Spectral bandwidth at 50 % Irel max (typ.) IF = 10 mA Abstrahlwinkel bei 50 % Iv (Vollwinkel) Viewing angle at 50 % Iv Durchlaspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 5 V Kapazitat Capacitance VR = 0 V, f = 1 MHz (typ.) (max.) (typ.) (max.) (typ.) 45 40 45 25 22 nm 2 120 2.0 2.6 0.01 10 12 120 2.0 2.6 0.01 10 8 120 2.0 2.6 0.01 10 10 120 2.0 2.6 0.01 10 15 120 2.0 2.6 0.01 10 15 deg. V V A A pF VF VF IR IR C0 Schaltzeiten: Switching times: IV from 10 % to 90 % (typ.) IV from 90 % to 10 % (typ.) IF = 100 mA, tp = 10 s, RL = 50 tr tf 300 150 300 150 300 150 450 200 450 200 ns ns Semiconductor Group 4 LSS T670, LOO T670, LYY T670 LGG T670, LPP T670 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 10 mA Relative spectral emission V() = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel = f () Radiation characteristic Semiconductor Group 5 LSS T670, LOO T670, LYY T670 LGG T670, LPP T670 Durchlastrom IF = f (VF) Forward current TA = 25 C Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C Relative Lichtstarke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25 C Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) Semiconductor Group 6 LSS T670, LOO T670, LYY T670 LGG T670, LPP T670 Wellenlange der Stahlung peak = f (TA) Wavelength at peak emission IF = 10 mA Dominantwellenlange dom = f (TA) Dominant wavelength IF = 10 mA Durchlaspannung VF = f (TA) Forward voltage IF = 10 mA Relative Lichtstarke IV / IV(25 C) = f (TA) Relative luminous intensity IF = 10 mA Semiconductor Group 7 LSS T670, LOO T670, LYY T670 LGG T670, LPP T670 Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) Semiconductor Group 8 GPL06837 |
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