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| BS850 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features * * * * * High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown Surface Mount Package Ideally Suited for Automatic Assembly DISCONTINUED, FOR NEW DESIGN USE BSS84 A D TOP VIEW G S D G H K J L M B C SOT-23 Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Mechanical Data * * * * * Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202 Method 208 Pin Connection: See Diagram Marking: S50 Weight: 0.008 grams (approx.) E All Dimensions in mm Maximum Ratings Drain-Source Voltage Drain-Gate Voltage @ TA = 25C unless otherwise specified Characteristic Symbol -VDSS -VDGS VGS -ID Pd Tj, TSTG Value 60 60 20 250 310 -65 to+150 Unit V V V mA mW C Gate-Source Voltage (pulsed) Drain Current (continuous) Power Dissipation @TC = 25C (Note 1) Operating and Storage Temperature Range Inverse Diode @ TA = 25C unless otherwise specified Characteristic Symbol IF VF Value 0.30 0.85 Unit A V Maximum Forward Current (continuous) Forward Voltage Drop (typ.) @ VGS = 0, IF = 0.12A, Tj = 25C Notes: 1. Device mounted on Ceramic Substrate 0.7mm; 2.5 cm2 area. DS11402 Rev. F-3 1 of 3 BS850 Electrical Characteristics Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Current Drain-Source Cutoff Current Drain-Source ON Resistance @ TA = 25C unless otherwise specified Symbol -V(BR)DSS VGS(th) -IGSS -IDSS rDS (ON) RqJA RqJSB gFS Ciss ton toff Min 60 -- -- -- -- -- -- -- -- -- Typ 90 1.0 -- -- 3.5 -- -- 200 60 5.0 25 Max -- 3.0 10 0.5 5.0 400 320 -- -- -- Unit V V nA A W K/W K/W mm pF ns Test Condition -ID = 100A, VGS = 0 -VGS = VDS, -ID = 1.0mA -VGS = 15V, VDS = 0 -VDS = 25V, VGS = 0 -VGS = 10V, -ID = 0.2A Note 1 Note 1 -VDS = 10V, -ID = 0.2A, f = 1.0MHz -VDS = 10V, VGS=0, f = 1.0MHz -VGS = 10V, -VDS = 10V, RD = 100W Thermal Resistance, Junction to Ambient Air Thermal Resistance Junction to Substrate Backside Forward Transconductance Input Capacitance Switching Times Turn On Time Turn Off Time Notes: 1. Device mounted on ceramic substrate 0.7mm; 2.5 cm2 area. DISCONTINUED, FOR NEW DESIGN USE BSS84 DS11402 Rev. F-3 2 of 3 BS850 -ID (ON), DRAIN SOURCE ON CURRENT (A) 0.5 1 7V TA = 25 C Pd, POWER DISSIPATION (W) 0.4 (See Note 1) 0.8 -VGS = 6V 0.3 0.6 Pulse test width 80 s; pulse duty factor 1% 5V 0.2 0.4 0.1 0.2 4V 3V 0 0 100 TA, AMBIENT TEMPERATURE ( C) Fig. 1. Power Derating Curve 200 0 0 20 40 60 80 100 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2. Output Characteristics -ID (ON), DRAIN SOURCE ON-CURRENT (mA) 500 TA = 25 C -VGS = 5V 1.0 -VDS = 10V TA = 25 C 400 0.8 -ID, DRAIN CURRENT (A) Pulse test width 80 s; pulse duty factor 1% Pulse test width 80 s; pulse duty factor 1% 300 4.5V 0.6 200 4.0V 0.4 100 3.5V 3.0V 0 0 2 4 6 0.2 DISCONTINUED, FOR NEW DESIGN USE BSS84 0 0 10 8 2 4 6 8 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3. Saturation Characteristics -VGS, GATE-SOURCE VOLTAGE (V) Fig. 4. Drain Current vs Gate-Source Voltage gfs, FORWARD TRANSCONDUCTANCE (mm) gf s, FORWARD TRANSCONDUCTANCE (mm) 500 -VDS = 10V 500 -VDS = 10V 400 Pulse test width 80 s; pulse duty factor 1% 400 Pulse test width 80 s; pulse duty factor 1% 300 300 200 200 100 100 0 0 2 4 6 8 10 0 0 100 200 300 400 500 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 5. Transconductance vs Gate-Source Voltage -ID, DRAIN CURRENT (mA) Fig. 6. Transconductance vs. Drain Current DS11402 Rev. F-3 3 of 3 BS850 |
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