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FMC7G50US60
October 2001
IGBT
FMC7G50US60
Compact & Complex Module
General Description
Fairchild's Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Features
* * * * * * * UL Certified No. E209204 Short circuit rated 10us @ TC = 100C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 50A High input impedance Built in brake and 3 phase rectifier circuit Fast & soft anti-parallel FWD
R B S U T V W EU EV EW
Package Code : 21PM-BA
P
P1
GU
GV
GW
Applications
* * * * AC & DC motor controls General purpose inverters Robotics Servo controls
GB N E -GU -GV -GW
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TSC VRRM IO IFSM I2t TJ Common TSTG VISO Mounting Torque
TC = 25C unless otherwise noted
Inverter & Brake
Converter
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC = 25C Pulsed Collector Current Diode Continuous Forward Current @ TC = 100C Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25C Short Circuit Withstand Time @ TC = 100C Repetitive Peak Reverse Voltage Average Output Rectified Current Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive 1 Cycle Surge Current Operating Junction Temperature Storage Temperature Range Isolation Voltage Mounting part Screw @ AC 1minute @ M4
FMC7G50US60 600 20 50 100 50 100 200 10 1200 50 500 1025 -40 to +150 -40 to +125 2500 1.25
Units V V A A A A W us V A A A2s C C V N.m
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
(c)2001 Fairchild Semiconductor Corporation
FMC7G50US60 Rev. A3
FMC7G50US60
Electrical Characteristics of the IGBT @ Inverter & Brake T
Symbol Parameter Test Conditions
C
= 25C unless otherwise noted
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 500mA, VCE = VGE IC = 50A, VGE = 15V 5.0 -6.0 2.2 8.5 2.8 V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---3460 480 140 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge --------------10 ---32 67 66 118 1.8 1.0 2.8 33 68 68 261 2.41 2.31 4.72 -145 28 65 --100 200 --3.8 --110 400 --6.65 -210 40 95 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ us nC nC nC
VCC = 300 V, IC = 50A, RG = 5.9, VGE = 15V Inductive Load, TC = 25C
VCC = 300 V, IC = 50A, RG = 5.9, VGE = 15V Inductive Load, TC = 125C
@ TC =
VCC = 300 V, VGE = 15V 100C
VCE = 300 V, IC = 50A, VGE = 15V
(c)2001 Fairchild Semiconductor Corporation
FMC7G50US60 Rev. A3
FMC7G50US60
Electrical Characteristics of the DIODE @ Inverter & Brake T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge IF= 50A di / dt = 100 A/us Test Conditions TC = 25C IF = 50A TC = 100C TC = 25C TC = 100C TC = 25C TC = 100C TC = 25C TC = 100C
C
= 25C unless otherwise noted
Min. ---------
Typ. 1.9 1.8 90 130 5 7 225 455
Max. 2.8 -130 -6.5 -422 --
Units V ns A nC
Electrical Characteristics of the DIODE @ Converter T
Symbol VFM IRRM Parameter Diode Forward Voltage Repetitive Reverse Current
C
= 25C unless otherwise noted
Test Conditions TC = 25C IF = 50A TC = 100C VR = VRRM TC = 25C TC = 100C
Min. -----
Typ. 1.1 1.0 -5
Max. 1.5 -8 --
Units V mA
Thermal Characteristics
Inverter Brake Converter Weight Symbol RJC RJC RJC RJC RJC Parameter Junction-to-Case (IGBT Part, per 1/6 Module) Junction-to-Case (DIODE Part, per 1/6 Module) Junction-to-Case (IGBT Part) Junction-to-Case (DIODE Part) Junction-to-Case (DIODE Part, per 1/6 Module) Weight of Module Typ. -----270 Max. 0.625 1.6 0.625 1.6 1.5 -Units C/W C/W C/W C/W C/W g
(c)2001 Fairchild Semiconductor Corporation
FMC7G50US60 Rev. A3
FMC7G50US60
140 120
Common Emitter T C = 25
20V
15V
140 120 12V Common Emitter VGE = 15V TC = 25 TC = 125 ------
Collector Current, IC [A]
Collector Current, I C [A]
8
100 80 60 40 20 0
100 80 60 40 20 0 0 2 4 6
VGE = 10V
1
10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
5
60 Common Emitter V GE = 15V
Collector - Emitter Voltage, VCE [V]
VCC = 300V Load Current : peak of square wave
4
50 100A
Load Current [A]
40
3 50A 2 IC = 30A
30
20
1
10
0 -50 0 50 100 150
0
Duty cycle : 50% TC = 100 Power Dissipation = 70W 1 10 100 1000
Case Temperature, T C []
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter TC = 25 16
20 Common Emitter TC = 125 16
Collector - Emitter Voltage, V CE [V]
Collector - Emitter Voltage, V CE [V]
12
12
8
8 100A 4 IC = 30A 0 50A
4 IC = 30A 0 0 4 8
100A 50A
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2001 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
FMC7G50US60 Rev. A3
FMC7G50US60
7000 Common Emitter V GE = 0V, f = 1MHz T C = 25
1000 Common Emitter V CC = 300V, V GE = 15V IC = 50A T C = 25 T C = 125 ------
6000
Capacitance [pF]
Cies 4000
Switching Time [ns]
5000
Ton
Tr
3000 Coes 2000 Cres 1000
100
0 1 10 10 100
Collector - Emitter Voltage, V CE [V]
Gate Resistance, RG []
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
1000
Switching Time [ns]
Toff
Switching Loss [uJ]
Common Emitter V CC = 300V, V GE = 15V IC = 50A T C = 25 T C = 125 ------
10000 Common Emitter VCC = 300V, V GE = 15V IC = 50A TC = 25 TC = 125 ------
Toff
Eon
Eoff
Tf
Eoff 1000
Tf 100
10
100
10
100
Gate Resistance, R G [ ]
Gate Resistance, R G [ ]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000 Common Emitter V GE = 15V, RG = 5.9 T C = 25 T C = 125 ------
1000
Switching Time [ns]
Switching Time [ns]
Ton Tr
Toff Tf Toff 100 Tf Common Emitter VGE = 15V, RG = 5.9 TC = 25 TC = 125 ------
100
10 10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 100
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2001 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
FMC7G50US60 Rev. A3
FMC7G50US60
20000 10000 Common Emitter V CC = 300V, V GE = 15V RG = 5.9 TC = 25 TC = 125
15 Common Emitter R L = 5.9 T C = 25
Gate - Emitter Voltage, VGE [ V ]
Eon
12
VCC = 100 V
300 V
Switching Loss [uJ]
Eoff
9
200 V
1000
6
3
100 20 40 60 80 100
0 0 40 80 120 160
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
300 100 IC MAX. (Pulsed) IC MAX. (Continuous) 50us 100us 1 10 DC Operation
300
100
Collector Current, I C [A]
Collector Current, I C [A]
10
1
Single Nonrepetitive Pulse T C = 25 Curves must be derated linerarly with increase in temperature 0.3 1 10 100 1000
Safe Operating Area V GE = 20V, T C = 100 C 1 1 10 100 1000
o
0.1
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, V CE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
300 100
5
Thermal Response, Zthjc [/W]
1
Collector Current, I C [A]
10
0.1
1 Single Nonrepetitive Pulse T J 125 V GE = 15V RG = 5.9 0 100 200 300 400 500 600 700
0.01
0.1
1E-3 10
-5
IGBT : DIODE : 10
-4
10
-3
10
-2
10
-1
10
0
10
1
Collector-Emitter Voltage, V CE [V]
Rectangular Pulse Duration [sec]
Fig 17. RBSOA Characteristics
(c)2001 Fairchild Semiconductor Corporation
Fig 18. Transient Thermal Impedance
FMC7G50US60 Rev. A3
FMC7G50US60
160
20
[A]
120
Peak Reverse Recovery Current, Irr [A] Reverse Recovery Time, T rr [x10ns]
Common Cathode V GE = 0V T C = 25 T C = 125
10
Trr
Forward Current, I
F
80
Irr 5
40
Common Cathode di/dt = 100A/us T C = 25 T C = 100 2 0 10 20 30 40 50
0 0 1 2 3 4
Forward Voltage, V F [V]
Forward Current, IF [A]
Fig 19. Forward Characteristics
Fig 20. Reverse Recovery Characteristics
(c)2001 Fairchild Semiconductor Corporation
FMC7G50US60 Rev. A3
FMC7G50US60
Package Dimension
21PM-BA (FS PKG CODE BK)
Dimensions in Millimeters
(c)2001 Fairchild Semiconductor Corporation FMC7G50US60 Rev. A3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R)
VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H4

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