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Schottky Barrier Diodes (SBD)
MA2H735
Silicon epitaxial planar type
Unit : mm
For switching circuits
3.2 0.1 0 to 0.05
* Small and thin Half New Mini-power package * Allowing to rectify under (IF(AV) = 1 A) condition * Low VF (forward voltage) type: VF > 0.5 V at IF = 1 A
1.9 0.1
2
1
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature
Symbol VR VRRM IF(AV) IFSM Tj Tstg
Rating 30 30 1 30 125 -40 to +125
Unit V V A A C C
0.25 - 0.05
0.9 0.2 3.8 0.2
0.9 0.2
1 : Anode 2 : Cathode Half New Mini-Power Package
Marking Symbol: A
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 1 A VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 * IR, RL = 100 50 30 Conditions Min Typ Max 1 0.50 Unit mA V pF ns
Note) 1. Rated input/output frequency: 20 MHz 2. * : trr measuring instrument
Bias Application Unit N-50BU tr
Input Pulse tp 10% t IF
Output Pulse
trr t Irr = 0.1 * IR IF = 100 mA IR = 100 mA RL = 100
A
VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50
90% tp = 2 s tr = 0.35 ns = 0.05
1.85 0.2
+ 0.1
I Absolute Maximum Ratings Ta = 25C
1.0 0.2
I Features
1
MA2H735
IF V F
1
Schottky Barrier Diodes (SBD)
IR V R
10 Ta = 125C 1
75C 25C - 20C
Ct VR
300 Ta = 25C
75C 10-1
Terminal capacitance Ct (pF)
Ta = 125C 10-1
250
Reverse current IR (mA)
Forward current IF (A)
200
10-2
150
10-3
10-2
25C
100
10-4
10-3
50
10-5
0
0.1
0.2
0.3
0.4
0.5
0.6
10-4
0
5
10
15
20
25
30
0
0
5
10
15
20
25
30
Forward voltage VF (V)
Reverse voltage VR (V)
Reverse voltage VR (V)
2

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