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| J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 J174 J175 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 G D S G TO-92 D SOT-23 Mark: 6W / 6X / 6Y S P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA = 25C unless otherwise noted Parameter Value - 30 30 50 -55 to +150 Units V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J174 - J177 350 2.8 125 357 Max *MMBFJ175 225 1.8 556 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation J174-177, Rev. A J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS B(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage IG = 1.0 A, VDS = 0 VGS = 20 V, VDS = 0 VDS = - 15 V, ID = - 10 nA J174 J175 J176 J177 5.0 3.0 1.0 0.8 30 1.0 10 6.0 4.0 2.5 V nA V V V V ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = - 15 V, IGS = 0 J174 J175 J176 J177 J174 J175 J176 J177 - 20 - 7.0 - 2.0 - 1.5 - 100 - 60 - 25 - 20 85 125 250 300 mA mA mA mA rDS(on) Drain-Source On Resistance VDS 0.1 V, VGS = 0 *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Typical Characteristics Common Drain-Source -20 - DRAIN CURRENT (mA) T A = 25C TYP V GS(off) = 4.5 V Parameter Interactions - TRANSCONDUCTANCE (mmhos) 100 50 r DS I DSS g fs r DS 1,000 500 - DRAIN "ON" RESISTANCE () -16 V GS = 0 V 0.5 V -12 -8 1.0 V 1.5 V 2.0 V 10 5 I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ -100 mV, VGS = 0 V GS(off) @ V DS = - 15V, I D = - 1.0 A 100 50 I D -4 0 2.5 V 3.0 V 3.5 V fs g 1 0 -1 -2 -3 -4 VDS - DRAIN-SOURCE VOLTAGE (V) -5 1 V GS (OFF) 10 2 5 10 - GATE CUTOFF VOLTAGE (V) J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch (continued) Typical Characteristics (continued) Transfer Characteristics -32 I D - DRAIN CURRENT (mA) - DRAIN CURRENT (mA) V DS = - 15 V V GS(off) = - 4.5 V Transfer Characteristics 16 V DS = - 15 V VGS(off) = - 4.5 V - 55C 25C 125C VGS(off) = 2.5 V - 55C 25C 125C -24 - 55C 25C 125C 12 -16 VGS(off) = 2.5 V - 55C 25C 125C 8 -8 4 0 I 0 1 2 3 VGS - GATE-SOURCE VOLTAGE (V) 4 0 0 D 1 2 3 VGS - GATE-SOURCE VOLTAGE (V) 4 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) V GS(off) @ 5.0V, 10 A g os - OUTPUT CONDUCTANCE ( mhos) Normalized Drain Resistance vs Bias Voltage - NORMALIZED RESISTANCE Output Conductance vs Drain Current f = 1.0 kHz -5.0V -5.0V 1000 r DS r DS = V GS 1 -________ V GS(off) 100 V GS(off) = - 4.5V -10V -20V -20V -10V 10 V GS(off) = - 2.5V DS _ 1 0.01 r _ _ 0.1 1 I D - DRAIN CURRENT (mA) _ 10 g fs - TRANSCONDUCTANCE (mmhos) Transconductance vs Drain Current C is (C rs ) - CAPACITANCE (pF) Capacitance vs Voltage 100 f = 0.1 - 1.0 MHz 10 V GS(off) = 2.5V 5 25C V GS(off) = 6.0V 1 0.5 V DG = -15V f = 1.0 kHz - 55C 25C 125C 10 5 C is (V DS = -15V) C rs (V DS = -15V) 0.1 _ 0.1 ID _ 1 10 - DRAIN CURRENT (mA) _ _ 100 1 0 4 8 12 16 V GS - GATE-SOURCE VOLTAGE (V) 20 J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch (continued) Typical Characteristics (continued) Noise Voltage vs Frequency r DS - DRAIN "ON" RESISTANCE () 100 e n - NOISE VOLTAGE (nV / Hz) 50 I D = - 0.2 mA Channel Resistance vs Temperature 1000 500 V GS(off) = 2.5V V GS(off) = 4.5V V GS(off) = 8.0V V DS = -100 mV V GS = 0 10 5 I D = 5.0 mA 100 50 V DG = - 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2f @ f 1.0 kHz 1 0.01 0.1 1 10 f - FREQUENCY (kHz) 100 10 -50 0 50 100 150 T A - AMBIENT TEMPERATURE ( o C) Power Dissipation vs Ambient Temperature PD - POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 TO-92 SOT-23 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. |
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