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NTF5P03T3
Preferred Device
Power MOSFET 5.2 Amps, 30 Volts
P-Channel SOT-223
Features
* * * * * * * * * *
Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT-223 Surface Mount Package Avalanche Energy Specified
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5.2 AMPERES 30 VOLTS RDS(on) = 100 mW
P-Channel D
Applications
DC-DC Converters Power Management Motor Controls Inductive Loads Replaces MMFT5P03HD
G S
MARKING DIAGRAM
4 1
2 3
SOT-223 CASE 318E STYLE 3
AWW 5P03
A WW 5P03
= Assembly Location = Work Week = Device Code
PIN ASSIGNMENT
4 Drain
1
2
3
Gate
Drain
Source
ORDERING INFORMATION
Device NTF5P03T3 Package SOT-223 Shipping 1000 Tape & Reel
(c) Semiconductor Components Industries, LLC, 2002
1
May, 2002 - Rev. 1
Publication Order Number: NTF5P03T3/D
NTF5P03T3
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Negative sign for P-Channel devices omitted for clarity Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 MW) Gate-to-Source Voltage - Continuous 1 SQ. FR-4 or G-10 PCB Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25C Linear Derating Factor Drain Current - Continuous @ TA = 25C Continuous @ TA = 70C Pulsed Drain Current (Note 1) Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25C Linear Derating Factor Drain Current - Continuous @ TA = 25C Continuous @ TA = 70C Pulsed Drain Current (Note 1) Symbol VDSS VDGR VGS RTHJA PD ID ID IDM RTHJA PD ID ID IDM TJ, Tstg EAS 250 Max -30 -30 20 40 3.13 25 -5.2 -4.1 -26 80 1.56 12.5 -3.7 -2.9 -19 - 55 to 150 Unit V V V C/W Watts mW/C A A A C/W Watts mW/C A A A C mJ
10 seconds Minimum FR-4 or G-10 PCB
10 seconds
Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = -30 Vdc, VGS = -10 Vdc, Peak IL = -12 Apk, L = 3.5 mH, RG = 25 W) 1. Repetitive rating; pulse width limited by maximum junction temperature.
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NTF5P03T3
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Cpk 2.0) (Notes 2 and 4) (VGS = 0 Vdc, ID = -0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = -24 Vdc, VGS = 0 Vdc) (VDS = -24 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) V(BR)DSS -30 - IDSS - - IGSS - - - - -1.0 -25 100 nAdc - -28 - - Vdc mV/C mAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Cpk 2.0) (Notes 2 and 4) (VDS = VGS, ID = -0.25 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Cpk 2.0) (Notes 2 and 4) (VGS = -10 Vdc, ID = -5.2 Adc) (VGS = -4.5 Vdc, ID = -2.6Adc) Forward Transconductance (Note 2) (VDS = -15 Vdc, ID = -2.0 Adc) VGS(th) -1.0 - RDS(on) - gfs 2.0 76 107 3.9 100 150 - Mhos -1.75 3.5 -3.0 - Vdc mV/C mW
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Transfer Capacitance (VDS = -25 Vdc, VGS = 0 V, f = 1 0 MH ) 1.0 MHz) Ciss Coss Crss - - - 500 153 58 950 440 140 pF
SWITCHING CHARACTERISTICS (Note 3)
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = -24 Vdc, ID = -4.0 Adc, VGS = -10 Vdc) (Note 2) 10 Vd ) (N t (VDD = -15 Vdc, ID = -2.0 Adc, VGS = -10 Vdc, 10 Vd RG = 6.0 W) (Note 2) (VDD = -15 Vdc, ID = -4.0 Adc, VGS = -10 Vdc, 10 Vd RG = 6.0 W) (Note 2) td(on) tr td(off) tf td(on) tr td(off) tf QT Q1 Q2 Q3 - - - - - - - - - - - - 10 33 38 20 16 45 23 24 15 1.6 3.5 2.6 24 48 94 92 38 110 60 80 38 - - - nC ns ns
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage (IS = -4.0 Adc, VGS = 0 Vdc) (IS = -4.0 Adc, VGS = 0 Vdc, TJ = 125C) (Note 2) (IS = -4.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ ) (Note 2) A/ms) (N t VSD - - trr ta tb Reverse Recovery Stored Charge 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 3. Switching characteristics are independent of operating junction temperatures. 4. Reflects typical values. Max limit * Typ Cpk + 3 SIGMA QRR - - - - -1.1 -0.89 34 20 14 0.036 -1.5 - - - - - mC ns Vdc
Reverse Recovery Time
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NTF5P03T3
TYPICAL ELECTRICAL CHARACTERISTICS
5 -ID, DRAIN CURRENT (AMPS) 10 -ID, DRAIN CURRENT (AMPS) VGS = -4.3 V VGS = -4.5 V VGS = -6.0 V VGS = -8.0 V VGS = -4.1 V VGS = -3.9 V VGS = -3.7 V VGS = -3.5 V VGS = -3.3 V 1 0 0 VGS = -3.1 V 0.3 0.6 0.9 1.2 VGS = -2.7 V 1.5 1.8 VDS -10 V 8
4
3 V = -10 V GS TJ = 25C 2
6
4 TJ = 25C 2 TJ = 100C 0 3 3.5 TJ = -55C 4 4.5 5 5.5 6
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.100 0.20
Figure 2. Transfer Characteristics
TJ = 25C 0.15 VGS = -4.5 V 0.10 VGS = -10 V 0.05
0.075
ID = -4.0 A TJ = 25C
0.050
0.025
0
0
1
2
3
4
5
0
0
1
2
3
4
5
6
7
8
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
-ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Gate-to-Source Voltage
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 ID = -2.0 A VGS = -10 V -IDSS, LEAKAGE (nA) 1.4 100
Figure 4. On-Resistance versus Drain Current and Gate Voltage
VGS = 0 V
1.2
TJ = 125C
1
10 TJ = 100C
0.8
0.6 -50
1 -25 0 25 50 75 100 125 150 0 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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NTF5P03T3
TYPICAL ELECTRICAL CHARACTERISTICS
VDS = 0 V Ciss VGS = 0 V -VDS, DRAIN-TO-SOURCE VOLTAGE (V) -VGS, GATE-TO-SOURCE VOLTAGE (V) 6000 5000 C, CAPACITANCE (pF) 4000 Crss 3000 Ciss 2000 Coss 1000 Crss 0 10 -VGS 0 -VDS 10 20 30 12.5 -VDS 10 QT 20 25
TJ = 25C
7.5
-VGS Q1 Q2 ID = -2 A TJ = 25C
15
5.0
10
2.5
5
0 0
10
20
30
40
50
0 60
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000 -IS, SOURCE CURRENT (AMPS) VDD = -15 V ID = -4.0 A VGS = -10 V td(off) t, TIME (ns) 3
Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge
VGS = 0 V TJ = 25C 2
tf 100 tr
1
10
td(on) 1 10 RG, GATE RESISTANCE (W) 100
0 0.5
0.6 0.7 0.8 0.9 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
1.0
Figure 9. Resistive Switching Time Variation versus Gate Resistance
100 -ID, DRAIN CURRENT (AMPS) VGS = 20 V SINGLE PULSE TC = 25C 10 EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 350
Figure 10. Diode Forward Voltage versus Current
ID = -6 A 300 250 200 150 100 50 0 25 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (C)
dc 1 10 ms 1 ms 0.1
100 ms 10 ms
0.01 0.1
RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1
10
100
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Mounted on 2"sq. FR4 board (1"sq. 2 oz. Cu 0.06" thick single sided) with on die operating, 10 s max.
Figure 11. Maximum Rated Forward Biased Safe Operating Area
Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature
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NTF5P03T3
TYPICAL ELECTRICAL CHARACTERISTICS
1 RTHJA(t), EFFECTIVE TRANSIENT THERMAL RESPONSE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E-03 1.0E-02 1.0E-01 1.0E+00 t, TIME (s) 1.0E+01 1.0E+02 NORMALIZED TO RqJA AT STEADY STATE (1 PAD) 0.0175 W CHIP JUNCTION 0.0154 F 0.0710 W 0.0854 F 0.2706 W 0.5779 W 0.7086 W 0.3074 F 1.7891 F 107.55 F AMBIENT 1.0E+03
Figure 13. FET Thermal Response
INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.15 3.8 0.079 2.0
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5
0.091 2.3
0.248 6.3
0.059 1.5
inches mm
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NTF5P03T3
TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 14 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems, but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177-189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints.
STEP 1 PREHEAT ZONE 1 "RAMP" 200C
STEP 2 STEP 3 VENT HEATING "SOAK" ZONES 2 & 5 "RAMP"
STEP 4 HEATING ZONES 3 & 6 "SOAK"
DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150C
160C
STEP 5 STEP 6 STEP 7 HEATING VENT COOLING ZONES 4 & 7 205 TO 219C "SPIKE" PEAK AT 170C SOLDER JOINT
150C 100C 100C DESIRED CURVE FOR LOW MASS ASSEMBLIES 5C 140C
SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY)
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 14. Typical Solder Heating Profile
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NTF5P03T3
PACKAGE DIMENSIONS
SOT-223 (TO-261) CASE 318E-04 ISSUE K
A F
4
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
S
1 2 3
B
D L G J C 0.08 (0003) H M K
INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN
MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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NTF5P03T3/D

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