 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SI4818DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 Channel 1 30 Channel-2 Channel 2 rDS(on) (W) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V 0.0155 @ VGS = 10 V 0.0205 @ VGS = 4.5 V ID (A) 6.3 5.4 9.5 8.2 SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.50 V @ 1.0 A IF (A) 2.0 D1 D2 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: SI4818DY SI4818DY-T1 (with Tape and Reel) 8 7 6 5 D1 D2 D2 D2 S1 N-Channel 1 MOSFET S2 A Schottky Diode G1 G2 N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Channel-2 10 secs 30 20 V 9.5 7.6 40 7.0 5.6 A 1.15 1.25 0.80 W _C Symbol VDS VGS 10 secs Steady State Steady State Unit 6.3 ID IDM IS PD TJ, Tstg 1.3 1.4 0.9 5.4 30 5.3 4.2 0.9 1.0 0.64 - 55 to 150 2.2 2.4 1.5 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Channel-1 Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71122 S-31062--Rev. B, 26-May-03 www.vishay.com Steady-State Steady-State RthJA RthJC Channel-2 Typ 43 82 25 Schottky Typ 48 80 28 Symbol Typ 72 100 51 Max 90 125 63 Max 53 100 30 Max 60 100 35 Unit _C/W C/W 1 SI4818DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Static Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 20 V V VDS = 24 V, VGS = 0 V V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V TJ = 85_C V V, On-State On State Drain Currentb ID( ) D(on) VDS = 5 V, VGS = 10 V V VGS = 10 V, ID = 6.3 A Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = 10 V, ID = 9.5 A VGS = 4.5 V, ID = 5.4 A VGS = 4.5 V, ID = 8.2 A Forward Transconductanceb Diode Forward Voltageb gf fs VSD VDS = 15 V, ID = 6.3 A VDS = 15 V, ID = 9.5 A IS = 1.3 A, VGS = 0 V IS = 1 A, VGS = 0 V Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 20 30 0.018 0.0125 0.024 0.0165 17 28 0.7 0.47 1.1 0.5 V S 0.022 0.0155 0.030 0.0205 W A 0.8 1.0 100 100 1 100 15 2000 mA nA V Symbol Test Condition Min Typa Max Unit Gate-Body Gate Body Leakage Dynamica Total Gate Charge Qg Channel 1 Channel-1 VDS = 15 V, VGS = 5 V, ID = 6.3 A Gate-Source Gate Source Charge Gate-Drain Gate Drain Charge Gate Resistance Turn-On Turn On Delay Time Rise Time Turn-Off Turn Off Delay Time Fall Time Source-Drain Source Drain Reverse Recovery Time Qgs Qgd d Rg td( ) d(on) tr td( ff) d(off) tf trr IF = 1.3 A, di/dt = 100 A/ms IF = 2.2 A, di/dt = 100 mA/ms Channel-1 Channel 1 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Channel-2 VDD = 15 V, RL = 15 W ID ^ 1 A VGEN = 10 V RG = 6 W A, V, Channel 2 Channel-2 VDS = 15 V, VGS = 5 V, ID = - 9.5 A Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 1.5 0.5 10 15 5 5 26 44 8 12 30 32 8.0 15 1.75 5.3 3.2 4.6 6.1 2.6 20 30 10 10 50 80 16 24 60 70 ns W 12 23 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 1.0 A IF = 1.0 A, TJ = 125_C Vr = 30 V Vr = 30 V, TJ = 100_C Vr = - 30 V, TJ = 125_C Vr = 10 V Min Typ 0.47 0.36 0.004 0.7 3.0 50 Max 0.50 0.42 0.100 10 20 Unit V Maximum Reverse Leakage Current g Irm mA Junction Capacitance CT pF www.vishay.com 2 Document Number: 71122 S-31062--Rev. B, 26-May-03 SI4818DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 4 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 CHANNEL-1 Transfer Characteristics 18 3V 18 12 12 TC = 125_C 6 25_C 6 1V 0 0 2 4 6 8 10 2V - 55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 1000 Capacitance DS(on) - On-Resistance ( W ) C - Capacitance (pF) 0.04 800 Ciss 600 0.03 VGS = 4.5 V 0.02 VGS = 10 V 400 Coss 200 Crss r 0.01 0.00 0 6 12 18 24 30 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 6.3 A 8 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) Document Number: 71122 S-31062--Rev. B, 26-May-03 0.4 - 50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 6.3 A 6 4 2 r DS(on) - On-Resistance (W) (Normalized) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 SI4818DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 40 0.10 CHANNEL-1 On-Resistance vs. Gate-to-Source Voltage DS(on) - On-Resistance ( W ) 0.08 I S - Source Current (A) TJ = 150_C 10 0.06 TJ = 25_C 0.04 ID = 6.3 A 0.02 r 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 0.4 V GS(th) Variance (V) 0.2 - 0.0 - 0.2 - 0.4 - 0.6 20 - 0.8 - 1.0 - 50 0 - 25 0 25 50 75 100 TJ - Temperature (_C) 125 150 ID = 250 mA Power (W) 80 100 Single Pulse Power, Junction-to-Ambient 60 40 0.001 0.01 0.1 Time (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 600 www.vishay.com 4 Document Number: 71122 S-31062--Rev. B, 26-May-03 SI4818DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 CHANNEL-1 Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 4 V 32 I D - Drain Current (A) I D - Drain Current (A) 32 40 CHANNEL-2 Transfer Characteristics 24 24 TC = 125_C 16 16 8 3V 2V 8 25_C - 55_C 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.030 2500 Capacitance r DS(on) - On-Resistance ( W ) 0.024 VGS = 4.5 V 0.018 VGS = 10 V 0.012 C - Capacitance (pF) 2000 Ciss 1500 1000 Coss 0.006 500 Crss 0.000 0 8 16 24 32 40 0 0 6 12 18 24 30 ID - Drain Current (A) Document Number: 71122 S-31062--Rev. B, 26-May-03 VDS - Drain-to-Source Voltage (V) www.vishay.com 5 SI4818DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 9.5 A 1.8 1.6 r DS(on) - On-Resistance (W) (Normalized) 1.4 1.2 1.0 0.8 0.6 0 0 6 12 18 24 30 0.4 - 50 VGS = 10 V ID = 9.5 A CHANNEL-2 On-Resistance vs. Junction Temperature 8 6 4 2 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.05 On-Resistance vs. Gate-to-Source Voltage DS(on) - On-Resistance ( W ) 0.04 I S - Source Current (A) TJ = 150_C 10 0.03 TJ = 25_C 0.02 ID = 9.5 A 0.01 r 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 0.4 V GS(th) Variance (V) 0.2 - 0.0 - 0.2 - 0.4 - 0.6 20 - 0.8 - 1.0 - 50 0 - 25 0 25 50 75 100 TJ - Temperature (_C) 125 150 ID = 250 mA Power (W) 80 100 Single Pulse Power, Junction-to-Ambient 60 40 0.001 0.01 0.1 Time (sec) 1 10 www.vishay.com 6 Document Number: 71122 S-31062--Rev. B, 26-May-03 SI4818DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance CHANNEL-2 0.2 0.1 0.1 0.05 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 82_C/W 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71122 S-31062--Rev. B, 26-May-03 www.vishay.com 7 SI4818DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 10 TJ = 150_C 1 I F - Forward Current (A) SCHOTTKY Forward Voltage Drop 20 10 I R - Reverse Current (mA) 0.1 30 V 24 V TJ = 25_C 0.01 0.001 0.0001 0 25 50 75 100 125 150 TJ - Temperature (_C) 1 0.0 0.3 0.6 0.9 1.2 1.5 VF - Forward Voltage Drop (V) Capacitance 200 160 C - Capacitance (pF) 120 80 Coss 40 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) www.vishay.com 8 Document Number: 71122 S-31062--Rev. B, 26-May-03 |
Price & Availability of SI4818DY
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |