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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS170/D TMOS FET Switching N-Channel -- Enhancement 1 DRAIN BS170 2 GATE 3 SOURCE (R) MAXIMUM RATINGS Rating Drain - Source Voltage Gate-Source Voltage -- Continuous -- Non-repetitive (tp 50 s) Drain Current(1) Total Device Dissipation @ TA = 25C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID PD TJ, Tstg Value 60 20 40 0.5 350 1 Unit Vdc Vdc Vpk Adc mW C 2 3 CASE 29-04, STYLE 30 TO-92 (TO-226AA) - 55 to +150 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate Reverse Current (VGS = 15 Vdc, VDS = 0) Drain-Source Breakdown Voltage (VGS = 0, ID = 100 Adc) IGSS V(BR)DSS -- 60 0.01 90 10 -- nAdc Vdc ON CHARACTERISTICS(2) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static Drain-Source On Resistance (VGS = 10 Vdc, ID = 200 mAdc) Drain Cutoff Current (VDS = 25 Vdc, VGS = 0 Vdc) Forward Transconductance (VDS = 10 Vdc, ID = 250 mAdc) VGS(Th) rDS(on) ID(off) gfs 0.8 -- -- -- 2.0 1.8 -- 200 3.0 5.0 0.5 -- Vdc A mmhos SMALL- SIGNAL CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- -- 60 pF SWITCHING CHARACTERISTICS Turn-On Time (ID = 0.2 Adc) See Figure 1 Turn-Off Time (ID = 0.2 Adc) See Figure 1 ton toff -- -- 4.0 4.0 10 10 ns ns 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. v v REV 1 Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1997 1 BS170 RESISTIVE SWITCHING +25 V ton 125 40 pF 50 1.0 M 20 dB 50 ATTENUATOR TO SAMPLING SCOPE 50 INPUT Vout OUTPUT V INVERTED out 10% INPUT (Vin Amplititude 10 Volts) Vin PULSE WIDTH toff Vin PULSE GENERATOR 50 90% 10% 90% 50% Figure 1. Switching Test Circuit Figure 2. Switching Waveforms 2.0 VGS(th), THRESHOLD VOLTAGE I D(on) , DRAIN CURRENT (AMPS) VDS = VGS ID = 1.0 mA 2.0 VGS = 10 V 1.6 9.0 V 8.0 V 1.2 7.0 V 6.0 V 5.0 V 0.4 4.0 V 1.6 1.2 0.8 0.8 0.4 0 50 100 0 50 TJ, JUNCTION TEMPERATURE (C) 150 0 1.0 2.0 3.0 VDS, DRAIN - TO-SOURCE VOLTAGE (VOLTS) 4.0 Figure 3. VGS(th) Normalized versus Temperature Figure 4. On-Region Characteristics 2.0 I D(on) , DRAIN CURRENT (AMPS) VGS = 10 V 9.0 V 8.0 V C, CAPACITANCE (pF) 100 VGS = 0 V 1.6 80 1.2 7.0 V 0.8 6.0 V 0.4 5.0 V 4.0 V 0 20 10 30 VDS, DRAIN - TO-SOURCE VOLTAGE (VOLTS) 40 60 40 Ciss 20 Coss Crss 0 10 20 30 40 50 60 VDS, DRAIN - TO-SOURCE VOLTAGE (VOLTS) Figure 5. Output Characteristics Figure 6. Capacitance versus Drain-To-Source Voltage 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data BS170 PACKAGE DIMENSIONS A R P SEATING PLANE B F L K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- XX G H V 1 D J C SECTION X-X N N DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 BS170 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps 4 BS170/D Motorola Small-Signal Transistors, FETs and Diodes Device Data |
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