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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6605 Issued Date : 1993.05.15 Revised Date : 2002.05.08 Page No. : 1/4
HSB772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB772 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings (Ta=25C)
TO-126ML
* Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature .................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) .................................................................................... 1.4 W Total Power Dissipation (Tc=25C) ..................................................................................... 10 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage...................................................................................... -40 V BVCEO Collector to Emitter Voltage................................................................................... -30 V BVEBO Emitter to Base Voltage........................................................................................... -5 V IC Collector Current (DC) ..................................................................................................... -3 A IC Collector Current (Pulse) ................................................................................................ -7 A IB Base Current (DC) ....................................................................................................... -0.6 A
Electrical Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -40 -30 -5 30 100 Typ. -0.3 -1 200 80 55 Max. -1 -1 -0.5 -2 400 Unit V V V uA uA V V Test Conditions IC=-100uA IC=-1mA IE=-10uA VCB=-30V VEB=-3V IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A IC=-20mA, VCE=-2V IC=-1A, VCE=-2V IC=-0.1A, VCE=-5V VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
MHz pF
Classification Of hFE2
Rank Range Q 100-200 P 160-320 E 200-400
HSB772
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000 125 C
o
Spec. No. : HE6605 Issued Date : 1993.05.15 Revised Date : 2002.05.08 Page No. : 2/4
Saturation Voltage & Collector Current
10000 VCE(s at) @ IC=5IB
75 C
o
25 C
o
Saturation Voltage (mV)
1000 75 C 100
o
hFE
100
hFE @ VCE=2V
125 C 10 25 C
o
o
10 1 10 100 1000 10000
1 1 10 100 1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
10000 VCE(sat) @ IC=10IB
Saturation Voltage & Collector Current
10000 VCE(sat) @ IC=20IB
Saturation Voltage (mV)
Saturation Voltage (mV)
1000 75 C 100 125 C 10
o o
1000 75 C
o o
25 C
o
100 125 C
o
25 C
10
1 1 10 100 1000 10000
1 1 10 100 1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
10000 VCE(sat) @ IC=40IB 1000 75 C
o
Saturation Voltage & Collector Current
10000 VBE(sat) @ IC=10IB
Saturation Voltage (mV)
Saturation Voltage (mV)
75 C 1000 25 C
o
o
100
125 C 25 C
o
o
10
125 C
o
1 1 10 100 1000 10000
100 1 10 100 1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
HSB772
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6605 Issued Date : 1993.05.15 Revised Date : 2002.05.08 Page No. : 3/4
Safe Operating Area
10 PT=1mS
1.6 1.4
Power Derating
PD(W), Power Dissipation
100
PT=100mS
Collector Current-IC (A)
1.2 1 0.8 0.6 0.4 0.2
1 PT=1S
0.1 1 10
0
0
50
o
100
150
200
Forward Biased Voltage (V)
Ta( C), Ambient Temperature
HSB772
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-126ML Dimension
Marking:
Spec. No. : HE6605 Issued Date : 1993.05.15 Revised Date : 2002.05.08 Page No. : 4/4
A
H
SB
B D E F 3 2 I G 1 J M L K O H
Date Code
772 Control Code
C
Style: Pin 1.Emitter 2.Collector 3.Base
N
3-Lead TO-126ML Plastic Package HSMC Package Code: D *: Typical
DIM A B C D E F G H
Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1131 0.1231 0.0737 0.0837 0.0294 0.0494 0.0462 0.0562
Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 2.87 3.12 1.87 2.12 0.74 1.25 1.17 1.42
DIM I J K L M N O
Inches Min. Max. *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842
Millimeters Min. Max. *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14
Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB772
HSMC Product Specification

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