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| (R) STPS15H100CB HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 2 x 7.5 A 100 V 175 C 0.67 V K A2 A1 K FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED s s s s s A2 A1 DESCRIPTION Dual center tab Schottky rectifier suited for Switch Mode Power Supply and high frequency DC to DC converters. Package in DPAK, this device is intended for use in high frequency inverters. DPAK ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Peak repetitive reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise reverse voltage Tc = 135C = 0.5 Per diode Per device Value 100 10 7.5 15 75 1 6600 - 65 to + 175 175 10000 A A A W C C V/s Unit V A tp = 10 ms sinusoidal tp = 2 s square F=1kHz tp = 1s Tj = 25C *: dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/4 July 2003 - Ed : 2A STPS15H100CB THERMAL RESISTANCES Symbol Rth(j-c) Rth(c) Parameter Junction to case Coupling Per diode Total Value 4 2.4 0.7 Unit C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% Min. Typ. 1.3 VR = VRRM IF = 7.5 A IF = 7.5 A IF = 12 A IF = 12 A IF = 15 A IF = 15 A 0.71 0.68 0.62 Max. 3 4 0.8 0.67 0.85 0.73 0.89 0.76 Unit mA mA V To evaluate the conduction losses use the following equation : P = 0.58 x IF(AV) + 0.012 IF2(RMS) Fig. 1: Conduction losses versus average current. PF(av)(W) 7 6 5 = 0.1 = 0.2 =1 = 0.5 Fig. 2: Average forward current versus ambient temperature ( = 0.5). IF(av)(A) 9 8 7 6 5 4 3 Rth(j-a)=70C/W Rth(j-a)=Rth(j-c) 4 3 2 = 0.05 T 2 1 tp T 1 IF(av)(A) 0 0 1 2 3 4 5 6 =tp/T 7 8 0 =tp/T 0 25 tp Tamb(C) 50 75 100 125 150 175 9 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 2/4 STPS15H100CB Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 100 90 80 70 60 50 40 30 20 10 0 1.E-03 IM t Tc=125C Tc=25C Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 = 0.2 = 0.1 = 0.5 Tc=75C T Single pulse =0.5 t(s) 1.E-02 1.E-01 1.E+00 0.1 0.0 tp(s) 1.E-02 1.E-01 =tp/T tp 1.E-03 1.E+00 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). IR(mA) 1.E+01 Tj=150C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(nF) 1.0 F=1MHz Vosc=30mV Tj=25C 1.E+00 Tj=125C 1.E-01 Tj=100C Tj=75C 0.1 1.E-02 Tj=50C 1.E-03 Tj=25C VR(V) 1.E-04 0 10 20 30 40 50 60 70 80 90 100 VR(V) 0.0 1 10 100 Fig. 9: Forward voltage drop versus forward current. Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35m). Rth(j-a)(C/W) 100 90 IFM(A) 100 Tj=125C (Maximum values) 80 70 10 Tj=125C (Typical values) Tj=25C (Maximum values) 60 50 40 30 20 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0 0 2 4 6 8 S(cm) 10 12 14 16 18 20 3/4 STPS15H100CB PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Millimeters Min. Max 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0 8 Inches Min. Max. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0 8 FOOTPRINT (dimensions in mm) 6.7 6.7 3 3 1.6 2.3 2.3 1.6 Ordering type STPS15H100CB STPS15H100CB-TR s Marking S15H100 S15H100 Package DPAK DPAK Weight 0.30 g 0.30 g Base qty 75 2500 Delivery mode Tube Tape & reel EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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