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| Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A s Features q q q Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 (TC=25C) Ratings 60 80 60 80 6 5 3 35 2 150 -55 to +150 Unit Parameter Collector to base voltage Collector to 2SD1266 2SD1266A 2SD1266 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.00.5 emitter voltage 2SD1266A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A W C C Solder Dip 4.0 V 16.70.3 s Absolute Maximum Ratings 7.50.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1266 2SD1266A 2SD1266 2SD1266A 2SD1266 2SD1266A (TC=25C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 10V, IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = - 0.1A, VCC = 50V 30 0.5 2.5 0.4 60 80 70 10 1.8 1.2 V V MHz s s s 250 min typ max 200 200 300 300 1 Unit A A mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification. 1 Power Transistors PC -- Ta 50 5 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C 2SD1266, 2SD1266A IC -- VCE 8 VCE=4V 7 25C 6 TC=100C 5 4 3 2 1 0 0 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 2.4 -25C IC -- VBE Collector power dissipation PC (W) Collector current IC (A) (1) 30 IB=100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 1 10mA 3 20 2 10 (2) (3) (4) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) 40 4 Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=8 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 -25C 10000 hFE -- IC 10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03 fT -- IC VCE=5V f=10MHz TC=25C Forward current transfer ratio hFE 1000 300 100 30 10 3 1 0.01 0.03 TC=100C 25C TC=100C 25C -25C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25C Rth(t) -- t (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) Thermal resistance Rth(t) (C/W) Collector current IC (A) 102 10 3 1 0.3 0.1 0.03 0.01 1 ICP IC 10ms DC t=1ms 10 (2) 1 2SD1266A 2SD1266 10-1 3 10 30 100 300 1000 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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