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PD - 91402A IRFR/U5305 HEXFET(R) Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount (IRFR5305) Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.065 G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET(R) Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-Pak IRFR5305 I-Pak IRFU5305 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. -31 -22 -110 110 0.71 20 280 -16 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient** Typ. --- --- --- Max. 1.4 50 110 Units C/W 10/23/00 IRFR/U5305 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions -55 --- --- V VGS = 0V, ID = -250A --- -0.034 --- V/C Reference to 25C, ID = -1mA --- --- 0.065 VGS = -10V, ID = -16A -2.0 --- -4.0 V VDS = VGS, ID = -250A 8.0 --- --- S VDS = -25V, ID = -16A --- --- -25 VDS = -55V, VGS = 0V A --- --- -250 VDS = -44V, VGS = 0V, TJ = 150C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20V --- --- 63 ID = -16A --- --- 13 nC VDS = -44V --- --- 29 VGS = -10V, See Fig. 6 and 13 --- 14 --- VDD = -28V --- 66 --- ID = -16A ns --- 39 --- RG = 6.8 --- 63 --- RD = 1.6, See Fig. 10 D Between lead, 4.5 --- --- 6mm (0.25in.) nH G from package --- 7.5 --- and center of die contact S --- 1200 --- VGS = 0V --- 520 --- pF VDS = -25V --- 250 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 71 170 -31 A -110 -1.3 110 250 V ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = -16A, VGS = 0V TJ = 25C, IF = -16A di/dt = -100A/s Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Pulse width 300s; duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. Uses IRF5305 data and test conditions. VDD = -25V, starting TJ = 25C, L = 2.1mH RG = 25, IAS = -16A. (See Figure 12) ISD -16A, di/dt -280A/s, VDD V(BR)DSS, TJ 175C * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. ** Uses typical socket mount. 2 www.irf.com IRFR/U5305 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V TO P 1000 -ID , D rain-to-S ou rc e C urre nt (A ) -ID , D rain-to-S ourc e C urrent (A ) VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 100 100 10 10 -4.5 V 2 0 s P U LS E W ID TH T c = 2 5C J A 0.1 1 10 100 -4 .5 V 20 s P U L S E W ID T H TC = 17 5C J 0.1 1 10 1 1 A 100 -VD S , D rain-to-S ourc e V oltage (V ) -VD S , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 2 5C TJ = 17 5 C R D S (on) , Drain-to-S ource O n Resistance (N orm alized) I D = -27 A -I D , D rain-to -So urc e C urre nt (A ) 1.5 10 1.0 0.5 1 4 5 6 7 V DS = -2 5 V 2 0 s P U L S E W ID TH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = -10 V 100 120 140 160 180 A -V G S , G ate -to-Source Volta ge (V ) T J , Junction T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFR/U5305 2500 2000 C iss C oss 1500 1000 -V G S , G ate -to-S ou rc e V oltage (V ) V GS C iss C rs s C o ss = = = = 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d 20 I D = -1 6A V D S = -4 4V V D S = -2 8V 16 C, C apacitanc e (pF ) 12 8 C rss 500 4 0 1 10 100 A 0 0 10 20 30 FO R TE S T C IR C U IT S E E FIG U R E 1 3 40 50 60 A -V D S , D rain-to-S ourc e V oltage (V ) Q G , Total G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 -IS D , R everse Drain C urrent (A ) O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n) -ID , D rain C urrent (A ) 100 100 100 s TJ = 17 5 C TJ = 25 C 10 1m s 10 0.4 0.8 1.2 1.6 V G S = 0V A 1 1 T C = 25 C T J = 17 5C S ing le P u lse 10 10m s 2.0 100 A -VS D , S ourc e-to-D rain V oltage (V ) -VD S , D rain-to-S ourc e V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U5305 VDS 35 RD VGS 30 D.U.T. + -ID , Drain Current (A) 25 -10V 20 Pulse Width 1 s Duty Factor 0.1 % 15 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 10 VGS 5 10% 0 25 50 75 100 125 150 175 90% VDS TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t2 0.1 0.05 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - RG VDD 5 IRFR/U5305 VDS L 700 E A S , S ingle Pulse Avalanc he E nergy (m J) RG D .U .T IA S D R IV E R 0 .0 1 TO P 600 VD D A BOTTOM 500 ID -6.6 A -11 A -1 6A -2 0 V tp 15V Fig 12a. Unclamped Inductive Test Circuit IAS tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG -10V QGS VG QGD VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - + - 400 300 200 100 0 V D D = -2 5V 25 50 75 100 125 150 A 175 S tarting T J , J unc tion T em perature (C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current 50K 12V .2F .3F VDS IRFR/U5305 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG VGS* ** * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + - VDD * * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS www.irf.com 7 IRFR/U5305 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 2 3 0 .5 1 (.0 2 0 ) M IN . 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU R CE 4 - D R A IN -B 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 .1 4 (.0 4 5 ) 0 .7 6 (.0 3 0 ) 2 .2 8 ( .0 9 0 ) 4 .5 7 ( .1 8 0 ) 0 .8 9 (.0 3 5 ) 3X 0 .6 4 (.0 2 5 ) 0 .2 5 ( .0 1 0 ) M AMB N O TE S : 2X 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) . D-Pak (TO-252AA) Part Marking Information 8 www.irf.com IRFR/U5305 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) -A 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 ( .0 5 0 ) 0 .8 8 ( .0 3 5 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 -B 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 9 .6 5 ( .3 8 0 ) 8 .8 9 ( .3 5 0 ) 2 3 6 .2 2 ( .2 4 5 ) 5 .9 7 ( .2 3 5 ) N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5M , 19 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R MS TO J E D E C O U T L IN E TO -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0.1 6 (.0 0 6 ). 3X 1 .1 4 (.0 45 ) 0 .7 6 (.0 30 ) 3X 0 .8 9 (.0 35 ) 0 .6 4 (.0 25 ) M AMB 1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 2 .28 (.0 9 0 ) 2X 0 .2 5 (.0 1 0 ) I-Pak (TO-251AA) Part Marking Information www.irf.com 9 IRFR/U5305 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TR L 1 6 .3 ( .6 4 1 ) 1 5 .7 ( .6 1 9 ) 1 6 .3 ( .64 1 ) 1 5 .7 ( .61 9 ) 1 2 .1 ( .4 7 6 ) 1 1 .9 ( .4 6 9 ) FE E D D IR E C TIO N 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) FE E D D IR E C T IO N N O T ES : 1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM ET E R . 2 . AL L D IM EN SIO N S AR E SH O W N IN M IL L IM ET E R S ( IN C H E S ). 3 . O U TL IN E C O N F O R M S T O E IA -4 81 & E IA -54 1 . 1 3 IN C H 16 m m N O T ES : 1 . O U TL IN E C O N F O R M S T O E IA-4 8 1 . IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 10 www.irf.com |
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