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| PD- 91770 IRG4CH50SB IRG4CH50SB IGBT Die in Wafer Form C G E 1200 V Size 5 Standard Speed 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Collector-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) 4.5V Max. 1200V Min. 3.0V Min., 6.0V Max. 300 A Max. 11 A Max. Test Conditions IC = 10A, TJ = 25C, VGE = 15V TJ = 25C, ICES = 250A, VGE = 0V VGE = VCE , TJ =25C, IC =250A T J = 25C, VCE = 1200V TJ = 25C, VGE = +/- 20V Mechanical Data Cr-Ni / V-Ag ( 1kA-2kA-.2.5kA ) 99% Al, 1% Si (4 microns) 0.257" x 0.260" 150mm, with std. < 100 > flat .015" + / -.003" 01-5227 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination Recommended Die Attach Conditions For optimum electrical results, die attach temperature should not exceed 300C Reference Standard IR packaged part ( for design ) : IRG4PH50SB (When available) Norminal Backmetal Composition, Thickness: Norminal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Die Outline 9/24/98 |
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