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| Previous Datasheet Index Next Data Sheet PD - 9.695A IRGPC50F INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) 1.7V @VGE = 15V, I C = 39A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 70 39 280 280 20 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.24 -- 6 (0.21) Max. 0.64 -- 40 -- Units C/W g (oz) Revision 0 C-87 To Order Previous Datasheet Index Next Data Sheet IRGPC50F Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.62 -- V/C VGE = 0V, I C = 1.0mA -- 1.4 1.7 IC = 39A V GE = 15V -- 2.0 -- V IC = 70A See Fig. 2, 5 -- 1.7 -- IC = 39A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -14 -- mV/C VCE = VGE, IC = 250A 21 30 -- S VCE = 100V, I C = 39A -- -- 250 A VGE = 0V, V CE = 600V -- -- 2000 VGE = 0V, V CE = 600V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 84 20 51 24 50 270 210 1.7 4.3 6.0 25 49 440 410 9.0 13 3000 340 40 Max. Units Conditions 100 IC = 39A 25 nC VCC = 400V See Fig. 8 67 VGE = 15V -- TJ = 25C -- ns IC = 39A, V CC = 480V 540 VGE = 15V, R G = 5.0 360 Energy losses include "tail" -- -- mJ See Fig. 9, 10, 11, 14 9.0 -- TJ = 150C, -- ns IC = 39A, V CC = 480V -- VGE = 15V, R G = 5.0 -- Energy losses include "tail" -- mJ See Fig. 10, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 5.0, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-88 To Order Previous Datasheet Index Next Data Sheet IRGPC50F 80 Fo r both: Triangular w ave: LO A D C U RR E N T (A ) 60 D uty c yc le: 50% T J = 125 C T s in k = 90C G ate d riv e as s pec ified Po w er D issip ation = 40W C lam p v oltage: 80 % of rated S quare w av e: 40 60% of ra ted voltage 20 Ideal diodes 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 1000 1000 I C , Collector-to-E m itter C urrent (A) IC , C ollector-to-E mitter C urrent (A ) TJ = 25 C TJ = 2 5C TJ = 1 5 0C 100 100 TJ = 1 50 C 10 10 1 0.1 1 V G E = 15 V 2 0 s P U L S E W ID TH 10 1 5 10 V C C = 1 00 V 5 s P UL S E W IDTH 15 20 V C E , C o llector-to-Em itter V oltage (V) V G E , G ate -to-E m itter V olta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-89 Revision 0 To Order Previous Datasheet Index Next Data Sheet IRGPC50F 70 M aximum D C Collector Current (A ) 60 V C E , C ollecto r-to -E m itter V o ltag e (V ) V G E = 15 V 3.0 VG E = 1 5 V 80 s P U L S E W ID TH I C = 78 A 2.5 50 40 2.0 30 I C = 39 A 1.5 20 I C = 20 A 10 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 1 00 120 140 160 T C , C ase Tem perature (C ) TC , C ase Tem perature (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 1 T he rm al R espons e (Z thJC ) D = 0 .5 0 0 .2 0 0.1 0 .1 0 0 .0 5 PDM t S ING L E P U L S E (TH E R M A L R E S PO N S E) 1 t2 0 .0 2 0 .0 1 N o te s : 1 . D u ty fa c to r D = t 1 /t 2 0.01 0.00001 2 . P e a k TJ = P D M x Z th J C + T C 0.000 1 0.001 0.01 0.1 1 10 t 1 , R ectangu lar Pulse D u ration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-90 To Order Previous Datasheet Index Next Data Sheet IRGPC50F 7000 C , C apacitance (pF ) 5000 Cies 4000 Coes 3000 V G E , G ate-to-Em itter V oltage (V ) 1 00 6000 V GE = 0V, f = 1MHz C ies = C ge + C gc , C ce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 4 80 V I C = 3 9A 16 12 8 2000 Cres 1000 4 0 1 10 0 0 30 60 90 120 V C E , C o llector-to-Em itter V oltage (V) Q g , Total G ate C harge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 7 .5 7 .0 To ta l S w itc hing Lo sse s (m J) Total S witching Losses (m J) VC C VG E TC IC = 4 80 V = 15 V = 25 C = 3 9A 100 R G = 2 .0 V GE = 1 5V V CC = 48 0V I C = 7 8A 6 .5 10 I C = 39 A I C = 2 0A 6 .0 5 .5 0 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 1 60 R G , G ate R es istance ( ) W TC , C ase Tem peratu re (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-91 To Order Previous Datasheet Index Next Data Sheet IRGPC50F 25 20 I C , C o lle c to r-to -E m itte r C u rre n t (A ) Total Sw itching Losses (m J ) RG TC V CC VGE = 2 .0 = 1 50C = 48 0V = 15V 1000 VG E E 20 V G= T J = 12 5C S A FE O P E RA TIN G A RE A 100 15 10 10 5 0 0 20 40 60 80 1 1 10 100 1000 I C , C ollecto r-to-E m itter C urrent (A ) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix C: Section D- page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13 C-92 To Order |
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