View IRGPC50FD2_187601.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Previous Datasheet
Index
Next Data Sheet
PD - 9.800
IRGPC50FD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diodes * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
C
Fast CoPack IGBT
VCES = 600V VCE(sat) 1.7V
G
@VGE = 15V, IC = 39A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 70 39 280 280 25 280 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-- -- -- -- --
Typ.
-- -- 0.24 -- 6 (0.21)
Max.
0.64 0.83 -- 40 --
Units
C/W
g (oz)
Revision 1
C-125
To Order
Previous Datasheet
Index
Next Data Sheet
IRGPC50FD2
Electrical Characteristics @ T = 25C (unless otherwise specified) J
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, IC = 250A -- 0.62 -- V/C VGE = 0V, IC = 1.0mA -- 1.6 1.7 IC = 39A VGE = 15V -- 2.0 -- V IC = 70A See Fig. 2, 5 -- 1.7 -- IC = 39A, T J = 150C Gate Threshold Voltage 3.0 -- 5.5 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -14 -- mV/C VCE = VGE, IC = 250A Forward Transconductance 21 24 -- S VCE = 100V, IC = 39A Zero Gate Voltage Collector Current -- -- 250 A VGE = 0V, VCE = 600V -- -- 6500 VGE = 0V, VCE = 600V, T J = 150C Diode Forward Voltage Drop -- 1.3 1.7 V IC = 25A See Fig. 13 -- 1.2 1.5 IC = 25A, T J = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V
Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
Switching Characteristics @ T = 25C (unless otherwise specified) J
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 110 20 50 70 110 400 290 2.5 6.0 8.5 68 100 760 520 14 13 3000 340 40 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 170 IC = 39A 30 nC VCC = 400V 75 See Fig. 8 -- TJ = 25C -- ns IC = 39A, VCC = 480V 600 VGE = 15V, RG = 5.0 400 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 11, 18 13 -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 39A, VCC = 480V -- VGE = 15V, RG = 5.0 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 75 ns TJ = 25C See Fig. 160 TJ = 125C 14 IF = 25A 10 A TJ = 25C See Fig. 15 TJ = 125C 15 V R = 200V 375 nC TJ = 25C See Fig. 1200 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 Pulse width 5.0s, single shot.
Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 )
VCC=80%(VCES), VGE=20V, L=10H, RG= 5.0, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%.
C-126
To Order
Previous Datasheet
Index
Next Data Sheet
IRGPC50FD2
30
D u ty c y cl e : 5 0 % TJ = 1 2 5 C T s in k = 9 0 C G a te d riv e a s s p e c ifie d T u rn -o n lo s s e s in c lu d e e f fe c ts o f re v e r s e re c o v e ry P o w e r D is s ip a tio n = 4 0 W
25
Load Current (A)
20
15
6 0 % o f ra te d v o lta g e
10
5
0 0.1 1 10
A
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
I C , Collector-to-E m itter C urrent (A)
IC , Collector-to-E m itter C urrent (A )
TJ = 25 C
TJ = 2 5C TJ = 1 5 0C
100
100
TJ = 1 50 C
10
10
1 0.1 1
V G E = 15 V 2 0 s P U L S E W ID TH
10
1 5 10
V C C = 1 00 V 5 s P U L S E W ID TH
15 20
V C E , C o llector-to-Em itter V oltage (V)
V G E , G ate -to-E m itter V olta ge (V )
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
C-127
To Order
Previous Datasheet
Index
Next Data Sheet
IRGPC50FD2
70
M aximum D C Collector Current (A )
60
VC E , C o llector-to-E mitte r V oltage (V )
V G E = 15 V
3.0
VG E = 1 5 V 80 s P UL S E W ID TH I C = 78 A
2.5
50
40
2.0
30
I C = 39 A
1.5
20
I C = 20 A
10
0 25 50 75 100 125 150
1.0 -60 -40 -20 0 20 40 60 80 1 00 120 140 160
T C , C ase Tem perature (C )
TC , C ase Tem perature (C )
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
1
T he rm al R espons e (Z thJC )
D = 0 .5 0
0 .2 0
0.1
0 .1 0 0 .0 5
PDM
t
S ING L E P U L S E (TH E R M A L R E S PO N S E)
1
t2
0 .0 2 0 .0 1
N o te s : 1 . D u ty fa c to r D = t
1
/t
2
0.01 0.00001
2 . P e a k TJ = P D M x Z th J C + T C
0.000 1
0.001
0.01
0.1
1
10
t 1 , R ectangu lar Pulse D u ration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-128
To Order
Previous Datasheet
Index
Next Data Sheet
IRGPC50FD2
7000
6000
C , C apacitance (pF )
5000
Cies
4000
Coes
3000
V G E , G ate-to-E m itte r V oltag e (V )
V GE = 0V, f = 1MHz C ies = C ge + C gc , C ce SHORTED C res = C gc C oes = C ce + C gc
20
V C E = 48 0V I C = 39 A
16
12
8
2000
Cres
1000
4
0 1 10 1 00
0 0 30 60 90 120
V C E , C o llector-to-Em itter V oltage (V)
Q g , T o tal G a te C h a rg e (n C )
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
9.2
100
Total Switching Losses (mJ)
9.0
Total Switching Losses (mJ)
VCC VGE TC IC
= 480V = 15V = 25C = 39A
RG = 5.0 V GE = 15V V CC = 480V I C = 78A
8.8
I C = 39A
10
8.6
I C = 20A
8.4
8.2 0 10 20 30 40 50
A
60
1 -60
A -40 -20 0 20 40 60 80 100 120 140 160
RG , Gate Resistance ()
TC , Case Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
C-129
To Order
Previous Datasheet
Index
Next Data Sheet
IRGPC50FD2
40
30
I C , C o lle c to r-to -E m itte r C u rre n t (A )
Total Switching Losses (mJ)
RG = 5 T C = 150C V CC = 480V V GE = 15V
1000
VG E E 20 V G= T J = 12 5C
S A FE O P E RA TIN G A RE A
100
20
10
10
0 0 20 40 60
A
80
1 1 10 100 1000
I C , Collector-to-Emitter Current (A)
V C E , C o lle cto r-to-E m itte r V olta g e (V )
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
TJ = 150C TJ = 125C
10
TJ = 25C
1 0.6
1.0
1.4
1.8
2.2
2.6
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-130
To Order
Previous Datasheet
Index
Next Data Sheet
IRGPC50FD2
140 100
120
VR = 200V TJ = 125C TJ = 25C
VR = 200V TJ = 125C TJ = 25C
100
I IRRM - (A)
I F = 50A I F = 25A
10
t rr - (ns)
80
IF = 50A IF = 25A
I F = 10A
60
IF = 10A
40
20 100
di f /dt - (A/s)
1000
1 100
di f /dt - (A/s)
1000
Fig. 14 - Typical Reverse Recovery vs. di/dt f
Fig. 15 - Typical Recovery Current vs. di/dt f
1500
10000
VR = 200V TJ = 125C TJ = 25C
1200
VR = 200V TJ = 125C TJ = 25C
900
IF = 50A
di(rec)M/dt - (A/s)
Q RR - (nC)
1000
IF = 10A
600
IF = 25A
IF = 25A
300
I F = 10A
0 100
IF = 50A
1000 100 100 1000
di f /dt - (A/s)
di f /dt - (A/s)
Fig. 16 - Typical Stored Charge vs. di/dt f C-131
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
To Order
Previous Datasheet
Index
Next Data Sheet
IRGPC50FD2
90% Vge +Vge
Same type device as D.U.T. Ic 10% Vce
Vce
90% Ic Ic 5% Ic
80% of Vce
430F D.U.T. td(off) tf
Eoff =
t1+5S Vce ic dt t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr Ic
GATE VOLTAGE D.U.T. 10% +Vg +Vg
Qrr =
trr id dt tx
tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic
10% Irr Vcc
Vpk Irr
DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3
t4 Erec = Vd id dt t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig.
18a, Defining Erec, trr, Qrr, Irr
Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 3 - JEDEC Outline TO-247AC (TO-3P)
C-132
Section D - page D-13
To Order

▲Up To Search▲

Price & Availability of IRGPC50FD2

	To Download IRGPC50FD2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .