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| MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM1000HA-2HB * * * * * IC Collector current ...................... 1000A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 145 19 9 28 27 37 28 8-6.5 42 BX 25 39 E BX C E 74 47 B E 163 51 73 B C 74 9 65 27 65 8 E 3-M4 47MAX. 16 3 16 3 34 3 34 2-M8 50MAX. 44.5 LABEL 45 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 1000 1000 7000 50 10000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M8 2500 8.85~10.8 90~110 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 2100 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm N*m kg*cm N*m kg*cm g Mounting screw M6 -- Mounting torque B(E) terminal screw M4 BX terminal screw M4 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1000V, VEB=2V VCB=1000V,Emitter open VEB=7V, Collector open IC=1000A, IB=1.33A IC=-1000A (diode forward voltage) IC=1000A, VCE=4.0V Min. -- -- -- -- -- -- 750 -- VCC=600V, IC=1000A, IB1=2A, -IB2=20A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 8.0 8.0 400 4.0 4.2 1.8 -- 2.5 20 7.0 0.018 0.07 0.01 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 1000 IB=1.33A 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 10 1 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) 800 IB=4A IB=250mA 600 400 DC CURRENT GAIN hFE Tj=25C IB=0.5A 200 VCE=4.0V Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 2.2 2.6 3.0 3.4 3.8 4.2 VCE=4V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE 10 0 VCE(sat) 7 5 4 3 IB=1.33A Tj=25C 2 Tj=125C 10 -1 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 2 ton, ts, tf (s) 4 IC=1000A 3 SWITCHING TIME 10 1 7 5 4 3 2 10 0 7 5 4 3 2 ts tf Tj=25C Tj=125C ton 2 IC=600A 1 Tj=25C Tj=125C IC=800A 0 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 2 3 5 7 10 1 VCC=600V IB1=2A -IB2=20A 3 4 5 7 10 2 2 3 4 5 7 10 3 23 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 2400 ts, tf (s) 2 10 1 7 5 3 2 10 0 7 5 ts tf COLLECTOR CURRENT IC (A) 3 2000 1600 1200 800 400 0 Tj=125C IB=-20A SWITCHING TIME VCC=600V IC=1000A IB1=2A Tj=25C Tj=125C 23 5 7 10 1 23 5 7 10 2 10 0 0 200 400 600 800 1000 1200 VCE (V) BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) 10 3 7 5 3 2 200s 1ms DC 50s DERATING FACTOR (%) 10 4 7 5 3 2 100 90 100s 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 TC (C) SECOND BREAKDOWN AREA COLLECTOR DISSIPATION 10 2 7 5 3 2 TC =25C NON-REPETITIVE 10 1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 0.02 0.016 Zth (j-c) (C/ W) 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 0.012 0.008 0.004 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 710 0 TIME (s) Tj=25C Tj=125C 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 10000 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 10 1 7 5 4 3 2 10 0 7 5 VCC=600V 4 IB1=2A 3 -IB2=20A 2 Tj=25C Tj=125C 10 -1 2 3 4 5 7 10 3 2 3 4 5 trr (s) 8000 Irr (A), Qrr (c) Irr 6000 Qrr trr 4000 2000 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (DIODE) 10 0 2 3 5 7 10 1 0.10 0.08 Zth (j-c) (C/ W) 0.06 0.04 0.02 0 10 -3 2 3 5 7 10 -2 2 3 5 710 -1 2 3 5 7 10 0 TIME (s) Feb.1999 |
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