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 MITSUBISHI SEMICONDUCTOR TRIAC
BCR8PM-20
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR8PM-20
OUTLINE DRAWING
Dimensions in mm
10.5 MAX 5.2
1.2
2.8
5.0
17
8.5
V
TYPE NAME
3.2 0.2
3.6
VOLTAGE CLASS
1.3 MAX
13.5 MIN
0.8
2.54
2.54
0.5
2.6
IT (RMS) ........................................................................ 8A VDRM ..................................................................... 1000V IFGT !, IRGT !, IRGT # ........................................... 30mA Viso........................................................................ 1500V UL Recognized: File No. E80276

V Measurement point of case temperature
T1 TERMINAL T2 TERMINAL GATE TERMINAL TO-220F
APPLICATION Switching mode power supply, light dimmer, electric flasher unit, control of household equipment such as TV sets * stereo * refrigerator * washing machine * infrared kotatsu * carpet, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 20 1000 1200 Unit V V
Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Viso
Parameter RMS on-state current Surge on-state current I2t for fusing
Conditions Commercial frequency, sine full wave 360 conduction, Tc=88C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
4.5
Ratings 8 80 26 5 0.5 10 2 -40 ~ +125 -40 ~ +125
Unit A A A2s W W V A C C g V
Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25C, AC 1 minute, T1 * T2 * G terminal to case
2.0 1500
V1. Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR8PM-20
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125C, VD=1/2VDRM Junction to case V4 Tj=25C, VD=6V, RL=6, RG=330 Tj=25C, VD=6V, RL=6, RG=330 Test conditions Tj=125C, VDRM applied Tc=25C, ITM=12A, Instantaneous measurement Limits Min. -- -- -- -- -- -- -- -- 0.2 --
V3
Typ. -- -- -- -- -- -- -- -- -- -- --
Max. 2.0 1.6 1.5 1.5 1.5 30 30 30 -- 3.7 --
Unit mA V V V V mA mA mA V C/ W V/s
V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
Voltage class
VDRM (V)
(dv/dt) c Symbol Min. Unit Test conditions
Commutating voltage and current waveforms (inductive load)
R
--
1. Junction temperature Tj=125C V/s 2. Rate of decay of on-state commutating current (di/dt)c=-4.0A/ms 3. Peak off-state voltage VD=400V
SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c
TIME
20
1000
TIME TIME VD
L
10
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
SURGE ON-STATE CURRENT (A)
RATED SURGE ON-STATE CURRENT 100 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102
ON-STATE CURRENT (A)
102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1
Tj = 125C
Tj = 25C
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V)
CONDUCTION TIME (CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR8PM-20
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE
3 2 VGM = 10V
GATE VOLTAGE (V)
PG(AV) = 0.5W PGM = 5W
GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C)
101 7 5 3 2 100 7 5 3 2
IGM = 2A VGT = 1.5V
IRGT III
IFGT I IRGT I, IRGT III VGD = 0.2V 10-1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA)
102 IRGT I , IFGT I 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE
100 (%)
GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C)
103 7 5 4 3 2 102 7 5 4 3 2
TYPICAL EXAMPLE
TRANSIENT THERMAL IMPEDANCE (C/W)
102 2 3 5 7 103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz)
101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)
MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT)
TRANSIENT THERMAL IMPEDANCE (C/W)
7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2
MAXIMUM ON-STATE POWER DISSIPATION
ON-STATE POWER DISSIPATION (W)
103
NO FINS
16 14 12 360 CONDUCTION 10 RESISTIVE, INDUCTIVE 8 LOADS 6 4 2 0 0 2 4 6 8 10 12 14 16
102
101
100
10-1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz)
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR8PM-20
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CASE TEMPERATURE (C) 140 120 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 AMBIENT TEMPERATURE (C) CURVES APPLY REGARDLESS OF CONDUCTION ANGLE
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 120 100 80 60 40 RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 120 120 t2.3 100 100 t2.3 60 60 t2.3 NATURAL CONVECTION CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 8 10 12 14 16
8
10
12
14
16
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C)
AMBIENT TEMPERATURE (C)
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)
HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE LACHING CURRENT (mA) 103 7 5 3 2 102 7 5 3 2 100 (%)
LACHING CURRENT VS. JUNCTION TEMPERATURE
HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C)
101 7 5 3 2
,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,,
DISTRIBUTION
+ T2 , G+ TYPICAL - T2 , G- EXAMPLE
+ T2 , G- TYPICAL EXAMPLE
100 -40
0
40
80
120
160
JUNCTION TEMPERATURE (C)
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR8PM-20
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 140
BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125C
BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s )
BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C)
120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C)
120 100 80 60 40 20 I QUADRANT III QUADRANT
0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s)
CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s)
COMMUTATION CHARACTERISTICS 3 TYPICAL 2 EXAMPLE 102 Tj = 125C 7 IT = 4A 5 = 500s 3 VD = 200V 2 f = 3Hz
VOLTAGE WAVEFORM
GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 100 (%) TYPICAL EXAMPLE IFGT I IRGT I IRGT III
(dv/dt)C IT
t VD (di/dt)C
t
101 7 I QUADRANT 5 3 MINIMUM 2 CHARAC100 TERISTICS III QUADRANT 7 VALUE 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms)
GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC)
CURRENT WAVEFORM
GATE CURRENT PULSE WIDTH (s)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6
6V V
A RG
6V V
A RG
TEST PROCEDURE 1 6
TEST PROCEDURE 2
6V V
A RG
TEST PROCEDURE 3
Feb.1999


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