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MITSUBISHI SEMICONDUCTOR TRIAC BCR8PM-20 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8PM-20 OUTLINE DRAWING Dimensions in mm 10.5 MAX 5.2 1.2 2.8 5.0 17 8.5 V TYPE NAME 3.2 0.2 3.6 VOLTAGE CLASS 1.3 MAX 13.5 MIN 0.8 2.54 2.54 0.5 2.6 IT (RMS) ........................................................................ 8A VDRM ..................................................................... 1000V IFGT !, IRGT !, IRGT # ........................................... 30mA Viso........................................................................ 1500V UL Recognized: File No. E80276 V Measurement point of case temperature T1 TERMINAL T2 TERMINAL GATE TERMINAL TO-220F APPLICATION Switching mode power supply, light dimmer, electric flasher unit, control of household equipment such as TV sets * stereo * refrigerator * washing machine * infrared kotatsu * carpet, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 20 1000 1200 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Viso Parameter RMS on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine full wave 360 conduction, Tc=88C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 4.5 Ratings 8 80 26 5 0.5 10 2 -40 ~ +125 -40 ~ +125 Unit A A A2s W W V A C C g V Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25C, AC 1 minute, T1 * T2 * G terminal to case 2.0 1500 V1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR8PM-20 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125C, VD=1/2VDRM Junction to case V4 Tj=25C, VD=6V, RL=6, RG=330 Tj=25C, VD=6V, RL=6, RG=330 Test conditions Tj=125C, VDRM applied Tc=25C, ITM=12A, Instantaneous measurement Limits Min. -- -- -- -- -- -- -- -- 0.2 -- V3 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.6 1.5 1.5 1.5 30 30 30 -- 3.7 -- Unit mA V V V V mA mA mA V C/ W V/s V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. Voltage class VDRM (V) (dv/dt) c Symbol Min. Unit Test conditions Commutating voltage and current waveforms (inductive load) R -- 1. Junction temperature Tj=125C V/s 2. Rate of decay of on-state commutating current (di/dt)c=-4.0A/ms 3. Peak off-state voltage VD=400V SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME 20 1000 TIME TIME VD L 10 PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS SURGE ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 100 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 Tj = 125C Tj = 25C 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR8PM-20 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE 3 2 VGM = 10V GATE VOLTAGE (V) PG(AV) = 0.5W PGM = 5W GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) 101 7 5 3 2 100 7 5 3 2 IGM = 2A VGT = 1.5V IRGT III IFGT I IRGT I, IRGT III VGD = 0.2V 10-1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 102 IRGT I , IFGT I 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (C/W) 102 2 3 5 7 103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) TRANSIENT THERMAL IMPEDANCE (C/W) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) 103 NO FINS 16 14 12 360 CONDUCTION 10 RESISTIVE, INDUCTIVE 8 LOADS 6 4 2 0 0 2 4 6 8 10 12 14 16 102 101 100 10-1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR8PM-20 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CASE TEMPERATURE (C) 140 120 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 AMBIENT TEMPERATURE (C) CURVES APPLY REGARDLESS OF CONDUCTION ANGLE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 120 100 80 60 40 RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 120 120 t2.3 100 100 t2.3 60 60 t2.3 NATURAL CONVECTION CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 8 10 12 14 16 8 10 12 14 16 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE LACHING CURRENT (mA) 103 7 5 3 2 102 7 5 3 2 100 (%) LACHING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 101 7 5 3 2 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION + T2 , G+ TYPICAL - T2 , G- EXAMPLE + T2 , G- TYPICAL EXAMPLE 100 -40 0 40 80 120 160 JUNCTION TEMPERATURE (C) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR8PM-20 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 140 BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125C BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C) 120 100 80 60 40 20 I QUADRANT III QUADRANT 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) COMMUTATION CHARACTERISTICS 3 TYPICAL 2 EXAMPLE 102 Tj = 125C 7 IT = 4A 5 = 500s 3 VD = 200V 2 f = 3Hz VOLTAGE WAVEFORM GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 100 (%) TYPICAL EXAMPLE IFGT I IRGT I IRGT III (dv/dt)C IT t VD (di/dt)C t 101 7 I QUADRANT 5 3 MINIMUM 2 CHARAC100 TERISTICS III QUADRANT 7 VALUE 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) CURRENT WAVEFORM GATE CURRENT PULSE WIDTH (s) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 6V V A RG 6V V A RG TEST PROCEDURE 1 6 TEST PROCEDURE 2 6V V A RG TEST PROCEDURE 3 Feb.1999 |
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