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 DSEP 2x 31-04A
HiPerFREDTM Epitaxial Diode
with soft recovery
Preliminary Data
VRSM V 400 VRRM V 400 DSEP 2x 31-04A Type
IFAV = 2x 30 A VRRM = 400 V trr = 30 ns
miniBLOC, SOT-227 B
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL Md Weight
Conditions TC = 105C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = tbd A; L = tbd H VA = 1.5*VR typ.; f = 10 kHz; repetitive
Maximum Ratings 100 30 tbd tbd tbd -40...+150 150 -40...+150 A A A mJ A C C C W V~ Nm/lb.in. Nm/lb.in. g
q q
Features
q
q q q q q q
TC = 25C 50/60 Hz, RMS IISOL 1 mA mounting torque (M4) terminal connection torque (M4) typical
100 2500 1.1-1.5/9-13 1.1-1.5/9-13 30
q q
International standard package miniBLOC Isolation voltage 2500 V~ UL registered E 72873 2 independent FRED in 1 package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour
Applications
q
Symbol IR x
Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 30 A; TVJ = 125C TVJ = 25C
Characteristic Values typ. max. 0.25 1.0 1.15 1.45 1.15 0.1 mA mA V V K/W K/W ns 6.8 A
q
q
q q q
VF y RthJC RthCH trr IRM
Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
Advantages
q
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25C VR = 100 V; IF = 50 A; -diF/dt = 100 A/ms TVJ = 100C
30
q
q
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified
Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
Dimensions see outlines.pdf
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2000 IXYS All rights reserved
1-2
008
DSEP 2x 31-04A
70 A 60 IF 50 40 30 20 10 0 0.0
1600 nC 1200
TVJ= 100C VR = 200V
IRM
50 A 40
TVJ= 100C VR = 200V
TVJ=150C TVJ=100C TVJ= 25C
Qr 800
IF= 60A IF= 30A IF= 15A
30
20
IF= 60A IF= 30A IF= 15A
400 10
0.5
1.0
1.5 V 2.0 VF
0 100
0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr versus -diF/dt
90 ns
Fig. 3 Peak reverse current IRM versus -diF/dt
15 V VFR 0.6
2.0
TVJ= 100C VR = 200V
TVJ= 100C IF = 30A tfr
s tfr 0.4
1.5 Kf 1.0
trr 80
70
IF= 60A IF= 30A IF= 15A
10
V FR
I RM
5 0.5 60 0.2
Qr
0.0 0 40 80 120 C 160 TVJ 50 0 200 400 600 -diF/dt 800 A/ms 1000 0 0 200 400 0.0 600 A/ms 1000 800 diF/dt
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.436 0.482 0.117 0.115 ti (s) 0.0055 0.0092 0.0007 0.0418
1 K/W 0.1 ZthJC 0.01
0.001
0.0001 0.00001
DSEP 2x 31-04A
0.0001
0.001
0.01
0.1 t
s
1
Fig. 7 Transient thermal resistance junction to case
008
NOTE: Fig. 2 to Fig. 6 shows typical values
(c) 2000 IXYS All rights reserved
2-2


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