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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M4N26/D M4N26 6-Pin DIP Optoisolators Transistor Output The M4N26 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. * Most Economical Optoisolator Choice for Medium Speed, Switching Applications * Meets or Exceeds All JEDEC Registered Specifications Applications * General Purpose Switching Circuits * Interfacing and coupling systems of different potentials and impedances * I/O Interfacing * Solid State Relays SCHEMATIC 6 1 STANDARD THRU HOLE STYLE 1 PLASTIC MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current -- Continuous LED Power Dissipation @ TA = 25C with Negligible Power in Output Detector Derate above 25C OUTPUT TRANSISTOR Collector-Emitter Voltage Emitter-Collector Voltage Collector-Base Voltage Collector Current -- Continuous Detector Power Dissipation @ TA = 25C with Negligible Power in Input LED Derate above 25C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25C Derate above 25C Ambient Operating Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16 from case) VISO PD TA Tstg TL 7500 250 2.94 - 55 to +100 - 55 to +150 260 Vac(pk) mW mW/C C C C VCEO VECO VCBO IC PD 30 7 70 50 150 1.76 Volts Volts Volts mA mW mW/C VR IF PD 3 60 100 1.41 Volts mA mW mW/C Symbol Value Unit 1 2 3 PIN 1. 2. 3. 4. 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE 6 5 4 1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Motorola Optoelectronics Device Data (c) Motorola, Inc. 1997 1 M4N26 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)(1) Characteristic INPUT LED Forward Voltage (IF = 10 mA) TA = 25C TA = -55C TA = 100C VF -- -- -- -- -- 1.15 1.3 1.05 -- 18 1.5 -- -- 100 -- Volts Symbol Min Typ(1) Max Unit Reverse Leakage Current (VR = 3 V) Capacitance (V = 0 V, f = 1 MHz) OUTPUT TRANSISTOR Collector-Emitter Dark Current (VCE = 10 V, TA = 25C) (VCE = 10 V, TA = 100C) Collector-Base Dark Current (VCB = 10 V) Collector-Emitter Breakdown Voltage (IC = 1 mA) Collector-Base Breakdown Voltage (IC = 100 A) Emitter-Collector Breakdown Voltage (IE = 100 A) Collector-Emitter Capacitance (f = 1 MHz, VCE = 0) Collector-Base Capacitance (f = 1 MHz, VCB = 0) Emitter-Base Capacitance (f = 1 MHz, VEB = 0) COUPLED Output Collector Current (IF = 10 mA, VCE = 10 V) Collector-Emitter Saturation Voltage (IC = 2 mA, IF = 50 mA) Turn-On Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3) Turn-Off Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3) Rise Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3) Fall Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3) Isolation Voltage (f = 60 Hz, t = 1 sec)(4) Isolation Resistance (V = 500 V)(4) Isolation Capacitance (V = 0 V, f = 1 MHz)(4) 1. 2. 3. 4. IR CJ A pF ICEO ICEO ICBO V(BR)CEO V(BR)CBO V(BR)ECO CCE CCB CEB IC (CTR)(2) VCE(sat) ton toff tr tf VISO RISO CISO -- -- -- 30 70 7 -- -- -- 1 1 0.2 45 100 7.8 7 19 9 50 -- -- -- -- -- -- -- -- nA A nA Volts Volts Volts pF pF pF 2 (20) -- -- -- -- -- 7500 1011 -- 7 (70) 0.15 2.8 4.5 2 2 -- -- 0.2 -- 0.5 -- -- -- -- -- -- -- mA (%) Volts s s s s Vac(pk) pF Always design to the specified minimum/maximum electrical limits (where applicable). Current Transfer Ratio (CTR) = IC/IF x 100%. For test circuit setup and waveforms, refer to Figure 14. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2 Motorola Optoelectronics Device Data M4N26 1.4 V F , FORWARD VOLTAGE (V) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.1 1.0 10 100 IF, FORWARD CURRENT (mA) 0 0 1.0 10 100 IF, LED CURRENT (mA) TA = 25C TA = 85C NCTR, NORMALIZED CTR TA = -55C 1.5 NORMALIZED TO: VCE = 10 V IF = 10 mA TA = 25C CTRCE(sat) VCE = 0.4 V NCTR 1.0 NCTR(sat) 0.5 TA = 25C Figure 1. Forward Voltage vs. Forward Current Figure 2. Normalized Non-Saturated and Saturated CTR, TA = 25C vs. LED Current 1.5 NORMALIZED TO: VCE = 10 V IF = 10 mA TA = 25C CTRCE(sat) VCE = 0.4 V 1.5 NORMALIZED TO: VCE = 10 V IF = 10 mA TA = 25C CTRCE(sat) VCE = 0.4 V NCTR, NORMALIZED CTR 1.0 NCTR, NORMALIZED CTR NCTR TA = 50C NCTR(sat) NCTR 1.0 TA = 70C NCTR(sat) 0.5 0.5 0 0.1 1.0 10 100 IF, LED CURRENT (mA) 0 0.1 1.0 10 100 IF, LED CURRENT (mA) Figure 3. Normalized Non-Saturated and Saturated CTR, TA = 50C vs. LED Current Figure 4. Normalized Non-Saturated and Saturated CTR, TA = 70C vs. LED Current 1.5 NORMALIZED TO: VCE = 10 V IF = 10 mA TA = 25C CTRCE(sat) VCE = 0.4 V NCTR, NORMALIZED CTR NCTR 1.0 TA = 85C 0.5 NCTR(sat) 0 0.1 1.0 10 100 IF, LED CURRENT (mA) Figure 5. Normalized Non-Saturated and Saturated CTR, TA = 85C vs. LED Current Motorola Optoelectronics Device Data 3 M4N26 35 25C ICE , COLLECTOR CURRENT (mA) 30 25 20 15 10 5.0 0 0 10 20 30 40 50 60 IF, LED CURRENT (mA) 70C 85C 50C ICEO , COLLECTOR-EMITTER (nA) 105 104 103 102 101 TYPICAL 100 10-1 10-2 -20 0 20 40 60 80 100 VCE = 10 V TA, AMBIENT TEMPERATURE (C) Figure 6. Collector-Emitter Current vs. Temperature and LED Current Figure 7. Collector-Emitter Leakage Current vs. Temperature 1.5 NCTR CB, NORMALIZED CTR CB NORMALIZED PHOTOCURRENT NORMALIZED TO: IF = 10 mA VCB = 9.3 V TA = 25C 10 NORMALIZED TO: IF = 10 mA TA = 25C 1.0 -20C 25C 70C 50C 1.0 0.5 25C 50C 70C 0.1 0 0.1 1.0 10 100 IF, LED CURRENT (mA) 0.01 0.1 1.0 10 100 IF, LED CURRENT (mA) Figure 8. Normalized CTRcb vs. LED Current and Temperature Figure 9. Normalized Photocurrent vs. lF and Temperature 1.2 70C NH FE , NORMALIZED H FE 1.0 50C 25C -20C 0.8 NORMALIZED TO: VCE = 10 V IB = 20 mA TA = 25C 0.6 0.4 1.0 10 100 1000 IB, BASE CURRENT (mA) Figure 10. Normalized Non-Saturated HFE vs. Base Current and Temperature 4 Motorola Optoelectronics Device Data M4N26 1.5 NHFE(sat) , NORMALIZED SATURATED H FE NORMALIZED TO: VCE = 10 V IB = 20 mA TA = 25C 1000 tp LH , PROPAGATION DELAY ( m s) TA = 25C IF = 10 mA VCC = 5.0 V VTH = 1.5 V 2.5 tp HL , PROPAGATION DELAY ( m s) 70C 1.0 25C -20C 0.5 50C tpHL 100 2.0 10 tpLH 1.5 VCE = 0.4 V 0 1.0 10 100 1000 IB, BASE CURRENT (mA) 1.0 0.1 1.0 10 RL, COLLECTOR LOAD RESISTOR (KW) 1.0 100 Figure 11. Normalized HFE vs. Base Current and Temperature Figure 12. Propagation Delay vs. Collector Load Resistor IF tD VO tR tPLH VTH = 1.5 V tPHL tS tF Figure 13. Switching Timing VCC = 5.0 V F = 10 KHz DF = 50% RL VO IF = 10 mA Figure 14. Switching Schematic Motorola Optoelectronics Device Data 5 M4N26 Package Dimensions in Inches (mm) PIN ONE ID. ANODE CATHODE 4 5 6 3 2 1 1 2 3 6 5 4 BASE COLLECTOR EMITTER 0.248 (6.30) 0.256 (6.50) NC 0.335 (8.50) 0.343 (8.70) 0.039 (1.00) min. 0.130 (3.30) 0.138 (3.50) 4_ typ. 0.018 (0.45) 0.022 (0.55) 0.010 (0.25) typ. 18_ typ. 0.300 (7.62) 0.347 (8.82) 0.114 (2.90) 0.130 (3.30) 0.300 (7.62) typ. 0.031 (0.80) min. 0.031 (0.80) 0.035 (0.90) 0.100 (2.54) typ. 6 Motorola Optoelectronics Device Data M4N26 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola Optoelectronics Device Data 7 M4N26 Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://www.mot.com/SPS/ 8 M4N26/D Motorola Optoelectronics Device Data |
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