View 2N4392_196448.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2N/PN/SST4391 Series
N-Channel JFETs
2N4391 2N4392 2N4393 Product Summary
Part Number
2N/PN/SST4391 2N/PN/SST4392 2N/PN/SST4393
PN4391 PN4392 PN4393
SST4391 SST4392 SST4393
VGS(off) (V)
-4 to -10 -2 to -5 -0.5 to -3
rDS(on) Max (W)
30 60 100
ID(off) Typ (pA)
5 5 5
tON Typ (ns)
4 4 4
Features
D D D D D Low On-Resistance: 4391<30 W Fast Switching--tON: 4 ns High Off-Isolation: ID(off) with Low Leakage Low Capacitance: < 3.5 pF Low Insertion Loss
Benefits
D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response, Low Glitches Eliminates Additional Buffering
Applications
D D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters Commutators
Description
The 2N/PN/SST4391 series features many of the superior characteristics of JFETs which make it a good choice for demanding analog switching applications and for specialized amplifier circuits. The 2N series hermetically-sealed TO-206AA (TO-18) can is available with processing per MIL-S-19500 (see Military Information). Both the PN, TO-226AA (TO-92), and SST, TO-236 (SOT-23), series are available in tape-and-reel for automated assembly (see Packaging Information). For similar dual products, see the 2N5564/5565/5566 data sheet.
TO-206AA (TO-18) S 1 S
TO-226AA (TO-92) D 1 D 2 S 2 1
TO-236 (SOT-23)
3
G
2 D Top View 2N4391 2N4392 2N4393
3 G and Case
G
3
Top View PN4391 PN4392 PN4393
Top View SST4391 (CA)* SST4392 (CB)* SST4393 (CC)* *Marking Code for TO-236
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70241. Applications information may also be obtained via FaxBack, request document #70597 and 70599.
Siliconix E-77090--Rev. E, 11-Aug-97
1
2N/PN/SST4391 Series
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage: (2N/PN Prefixes) . . . . . . . . . . . . . . . -40 V (SST Prefix) . . . . . . . . . . . . . . . . . . . -35 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . -65 to 200 _C (PN/SST Prefixes) . . . . . . . . -55 to 150 _C Operating Junction Temperature : (2N Prefix) . . . . . . . . . . . . . . -55 to 200 _C (PN/SST Prefixes) . . . . . . . . -55 to 150 _C Power Dissipation : (2N Prefix)a . . . . . . (TC = 25_C) 1800 mW (PN/SST Prefixes)b . . . . . . . . . . . 350 mW
Notes a. Derate 10 mW/_C above 25_C b. Derate 2.8 mW/_C above 25_C
Specificationsa
Limits
4391 4392 4393
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain S t ti D i Currentc
Symbol
Test Conditions
Typb
Min
Max
Min
Max
Min
Max
Unit
V(BR)GSS VGS( ff) GS(off)
IG = -1 mA, VDS = 0 V VDS = 20 V VDS = 15 V 2N/PN: ID = 1 nA SST: ID = 10 nA 2N PN SST VGS = -20 V VDS = 0 V 2N/SST PN
-55
-40 -4 4 50 50 50 -10 10 150 150 -100 -1000 -200 -200
-40 -2 2 25 25 25 -100 -1000 -200 -200 -5 5 75 100
-40 V -0.5 05 5 5 5 -100 -1000 -200 -200 nA pA -3 3 30 60 mA
IDSS
VDS = 20 V, VGS = 0 V
-5 -5 -13 -1 -3 -5 5 5 5 0.005 0.005 0.005 5 13 13 13 1 1 1 3 0.25 0.3 0.35
Gate Reverse Current
IGSS
2N: TA = 150_C PN: TA = 100_C SST: TA = 125_C
Gate Operating Current
IG
VDG = 15 V, ID = 10 mA 2N: VGS = -5 V 2N: VGS = -7 V VDS = 20 V 2N: VGS = -12 V PN: VGS = -5 V PN: VGS = -7 V PN: VGS = -12 V SST VDS = 10 V, VGS = -10 V
100 100 100 1 1 1 100 100 200 200 200 200 200 nA 100 200 pA nA pA
Drain Cutoff Current
ID(off) VDS = 20 V TA = 150 C 150_C
2N: VGS = -5 V 2N: VGS = -7 V 2N: VGS = -12 V PN: VGS = -5 V VDS = 20 V TA = 100 C 100_C VDS = 10 V TA = 125_C PN: VGS = -7 V PN: VGS = -12 V SST: VGS = -10 V ID = 3 mA
0.4 0.4 0.4 V
Drain-Source DiS On-Voltage On Voltage
VDS(on)
VGS = 0 V
ID = 6 mA ID = 12 mA
2
Siliconix E-77090--Rev. E, 11-Aug-97
2N/PN/SST4391 Series
Specificationsa
Limits
4391 4392 4393
Parameter Static (Cont'd)
Drain-Source On-Resistance Gate-Source Forward Voltage
Symbol
Test Conditions
Typb
Min
Max
Min
Max
Min
Max
Unit
rDS(on) VGS(F)
VGS = 0 V, ID = 1 mA IG = 1 mA VDS = 0 V 2N PN/SST 0.7 0.7
30 1
60 1
100 1
W V
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source C S Input Capacitance gfs VDS = 20 V, ID = 1 mA, f = 1 kHz S gos rDS(on) VGS = 0 V, ID = 0 mA , f = 1 kHz 2N Ciss VDS = 20 V VGS = 0 V V, f = 1 MHz PN SST 2N: VGS = -5 V 2N: VGS = -7 V 2N: VGS = -12 V Common Source Common-Source Reverse Transfer Capacitance PN: VGS = -5 V Crss VDS = 0 V f = 1 MHz PN: VGS = -7 V PN: VGS = -12 V SST: VGS = -5 V SST: VGS = -7 V SST: VGS = -12 V Equivalent Input Noise Voltage en VDS = 10 V, ID = 10 mA f = 1 kHz 12 12 13 3.3 3.2 2.8 3.5 3.4 3.0 3.6 3.5 3.1 3 nV Hz 5 5 3.5 5 pF 3.5 3.5 25 30 14 16 60 14 16 100 14 16 mS W 6 mS
Switching
td( ) d(on) Turn On Time Turn-On tr td( ff) d(off) Turn-Off Time tf VDD = 10 V VGS(H) = 0 V See Switching Circuit 2N/PN SST 2N/PN SST 2N/PN SST 2N/PN SST 2 2 2 2 6 6 13 13 NCB 15 20 30 20 35 50 5 5 5 ns 15 15 15
Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%.
Siliconix E-77090--Rev. E, 11-Aug-97
3
2N/PN/SST4391 Series
Typical Characteristics
100 rDS(on) - Drain-Source On-Resistance ( W )
On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage
rDS @ ID = 1 mA, VGS = 0 V IDSS @ VDS = 20 V, VGS = 0 V
200 rDS(on) - Drain-Source On-Resistance ( W ) I DSS - Saturation Drain Current (mA)
100
On-Resistance vs. Drain Current
TA = 25_C
80 IDSS
160
80 VGS(off) = -2 V
60
rDS
120
60
40
80
40
-4 V -8 V
20
40
20
0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V)
0
0 1 10 ID - Drain Current (mA) 100
On-Resistance vs. Temperature
200 rDS(on) - Drain-Source On-Resistance ( W ) ID = 1 mA rDS changes X 0.7%/_C 160 Switching Time (ns)
5
Turn-On Switching
tr approximately independent of ID VDD = 5 V, RG = 50 W VGS(L) = -10 V tr
4
120 VGS(off) = -2 V 80 -4 V 40 -8 V
3 td(on) @ ID = 12 mA 2 td(on) @ ID = 3 mA
1
0 -55 -35 -15 5 25 45 65 85 105 125 TA - Temperature (_C) 30
0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 30
Turn-Off Switching
td(off) independent of device VGS(off) VDD = 5 V, VGS(L) = -10 V
Capacitance vs. Gate-Source Voltage
f = 1 MHz VDS = 0 V
24 Switching Time (ns) Capacitance (pF)
24
18 tf td(off) 6 VGS(off) = -8 V 0 0 2 4
VGS(off) = -2 V
18
12
12 Ciss 6 Crss 0
6
8
10
0
-4
-8
-12
-16
-20
ID - Drain Current (mA)
VGS - Gate-Source Voltage (V)
4
Siliconix E-77090--Rev. E, 11-Aug-97
2N/PN/SST4391 Series
Typical Characteristics (Cont'd)
100
Noise Voltage vs. Frequency
g fs - Forward Transconductance (mS) VDS = 10 V
50
Forward Transconductance and Output onductance vs. Gate-Source Cutoff Voltage*
500 gfs and gos @ VDS = 20 V VGS = 0 V, f = 1 kHz g fs - Forward Transconductance ( m S)
(nV / Hz)
40
400
30
gfs
gos
200
e n - Noise Voltage
10 ID = 1 mA
20
200
ID = 10 mA
10
100
1 10 100 1k f - Frequency (Hz) 10 k 100 k
0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V)
0
10 nA
Gate Leakage Current
IGSS @ 125_C TA = 125_C ID = 10 mA 100
Common-Gate Input Admittance
VDG = 10 V ID = 10 mA TA = 25_C 10 (mS) 1 mA big
1 nA I G - Gate Leakage
gig
100 pA
1 mA
10 pA TA = 25_C 1 pA
10 mA
IGSS @ 25_C
1
IG(on) @ ID 0.1 pA 0 6 12 18 24 30 VDG - Drain-Gate Voltage (V) 0.1 100 200 500 1000 f - Frequency (MHz)
Common-Gate Forward Admittance
100 VDG = 10 V ID = 10 mA TA = 25_C -gfg 10 (mS) (mS) gfg bfg 1.0 10
Common-Gate Reverse Admittance
VDG = 10 V ID = 10 mA TA = 25_C -brg
-grg 0.1
+grg
1
0.1 100 200 500 1000 f - Frequency (MHz)
0.01 100
200
500
1000
f - Frequency (MHz)
Siliconix E-77090--Rev. E, 11-Aug-97
5
2N/PN/SST4391 Series
Typical Characteristics (Cont'd)
Common-Gate Output Admittance
100 g fs - Forward Transconductance (mS) VDG = 10 V ID = 10 mA TA = 25_C bog 10 (mS) gog 100
Transconductance vs. Drain Current
VGS(off) = -2 V VDS = 10 V f = 1 kHz
TA = -55_C 25_C 10 125_C
1
0.1 100 200 500 1000 f - Frequency (MHz)
1 0.1 1.0 ID - Drain Current (mA) 10
100
Output Characteristics
VGS(off) = -4 V
100
Transfer Characteristics
VGS(off) = -4 V VDS = 20 V
80 I D - Drain Current (mA) I D - Drain Current (mA)
80 TA = -55_C 60 25_C 40
60
VGS = 0 V -0.5 V
40
-1.0 V -1.5 V
20
-2.0 V -2.5 V 0 2 4 6 8 10
20 125_C
0 VDS - Drain-Source Voltage (V)
0 0 -1 -2 -3 -4 -5 VGS - Gate-Source Voltage (V)
Switching Time Test Circuit
4391
VGS(L) RL* ID(on) *Non-inductive -12 V 800 W 12 mA
VDD
RL
4392
-7 V 1600 W 6 mA
4393
-5 V 3000 W 3 mA VGS(L) 1 kW VIN Scope 51 W VGS(H) OUT
Input Pulse
Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz
Sampling Scope
Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF
51 W
See Typical Characteristics curves for changes.
6
Siliconix E-77090--Rev. E, 11-Aug-97

▲Up To Search▲

Price & Availability of 2N4392

	To Download 2N4392 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .