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| FSBCW30 Discrete POWER & Signal Technologies FSBCW30 C E B SuperSOTTM-3 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See BC857A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Collector-Emitter Voltage Value 32 32 5.0 500 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient 2 Max FSBCW30 500 4 250 Units mW mW/C C/W *Device mounted on FR-4 PCB 4.5" x 5"; mounting pad 0.02 in of 2oz copper. (c) 1998 Fairchild Semiconductor Corporation FSBCW30, Rev B FSBCW30 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS B V CEO B V CBO B V CES B V EBO IC B O C ollector-E m itter B reakdow n V oltage C ollector-B ase B reakdow n V oltage C ollector-E m itter B reakdow n V oltage E m itter-B ase B reakdow n V oltage C ollector-C utoff C urrent I C = 2.0 m A , I B = 0 I C = 10 A , I E = 0 I C = 10 A , I E = 0 I E = 10 A , I C = 0 V C B = 32 V , I E = 0 V C B = 32 V , I E = 0, T A = + 100 C 32 32 32 5.0 100 10 V V V V nA A ON CHARACTERISTICS hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE = 5.0 V, IC = 2.0 mA IC = 10 mA, IB = 0.5 mA VCE = 5.0 V, IC = 2.0 mA 0.60 215 500 0.30 0.75 V V SMALL SIGNAL CHARACTERISTICS NF Noise Figure VCE = 5.0 V, IC = 200 A, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 10 dB FSBCW30, Rev B FSBCW30 PNP General Purpose Amplifier (continued) Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V VCESAT- COLLECTOR EMITTER VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 0.2 0.15 25 C 400 300 125 C = 10 25 C 200 100 0 0.01 - 40 C 0.1 0.05 0 0.1 125 C - 40 C 0.1 1 10 100 IC - COLLECTOR CURRENT (mA) 1 10 100 I C - COLLECTOR CURRENT (mA) P 68 300 1.2 1 0.8 0.6 0.4 0.2 0 0.1 VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current = 10 Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0 0.1 V CE = 5V - 40 C 25 C 125 C - 40 C 25 C 125 C 1 10 100 I C - COLLECTOR CURRENT (mA) 300 1 10 I C - COLLECTOR CURRENT (mA) 100 200 Collector-Cutoff Current vs. Ambient Temperature ICBO- COLLECTOR CURRENT (nA) V CB = 50V 10 BV CER - BREAKDOWN VOLTAGE (V) 100 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 95 90 1 85 80 0.1 75 0.01 25 50 75 100 T A - AMBIENT TEMPERATURE ( C) 125 70 0.1 1 10 100 1000 RESISTANCE (k ) FSBCW30, Rev B FSBCW30 PNP General Purpose Amplifier (continued) Typical Characteristics VCE - COLLECTOR-EMITTER VOLTAGE (V) (continued) Collector Saturation Region 4 Input and Output Capacitance vs Reverse Voltage 100 Ta = 25C 3 f = 1.0 MHz CAPACITANCE (pF) 2 Ic = 100 uA 50 mA 300 mA 10 Cib Cob 1 0 100 300 700 2000 4000 I B - BASE CURRENT (uA) 0.1 1 10 100 Vce- COLLECTOR VOLTAGE(V) f T - GAIN BANDWIDTH PRODUCT (MHz) Gain Bandwidth Product vs Collector Current 40 Switching Times vs Collector Current 300 270 240 210 TIME (nS) 180 150 120 90 60 30 0 10 td tf tr IB1 = IB2 = Ic / 10 V cc = 10 V Vce = 5V 30 ts 20 10 0 1 10 P 68 20 50 100 150 I C- COLLECTOR CURRENT (mA) 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) 300 Power Dissipation vs Ambient Temperature 700 P D - POWER DISSIPATION (mW) 600 500 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 SOT-23 TO-92 FSBCW30, Rev B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. |
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