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| PD - 93894A IRF7700 HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel VDSS -20V RDS(on) max 0.015@VGS = -4.5V 0.024@VGS = -2.5V ID -8.6A -7.3A Description HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides the de1 2 3 4 1= 2= 3= 4= D S S G D 8 7 G 6 S 8= 7= 6= 5= D S S D 5 signer with an extremely efficient and reliable device for use in battery and load management. The TSSOP-8 package, has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the TSSOP-8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. TSSOP-8 Absolute Maximum Ratings Parameter VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 8.6 6.8 68 1.5 0.96 0.01 12 -55 to + 150 Units V A W W/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 83 Units C/W www.irf.com 1 6/19/00 IRF7700 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 --- --- --- -0.45 -20 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.011 --- --- --- --- --- --- --- --- 59 10 19 19 40 120 130 4300 880 580 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.015 VGS = -4.5V, ID = -8.6A 0.024 VGS = -2.5V, ID = -7.3A -1.2 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -8.6A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, T J = 70C -100 VGS = -12V nA 100 VGS = 12V 89 ID = -8.6A 15 nC VDS = -16V 29 VGS = -5.0V --- VDD = -10V --- ID = -1.0A ns --- RG = 6.0 --- VGS = -4.5V --- VGS = 0V --- pF VDS = -15V --- = TBDkHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 130 180 -1.5 A -68 -1.2 200 270 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.5A, VGS = 0V TJ = 25C, IF = -1.5A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t<10 sec Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF7700 100 VGS -15V -10V -4.5V -3.0V -2.7V -2.5V -2.25V BOTTOM -2.0V TOP 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -15V -10V -4.5V -3.0V -2.7V -2.5V -2.25V BOTTOM -2.0V TOP 10 -2.0V -2.0V 10 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 4.1A -I D, Drain-to-Source Current ( ) T J = 25C 1.5 T J = 150C 1.0 0.5 10 2.0 2.4 VDS = -15V 20s PULSE WIDTH 2.8 3.2 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7700 2000 1600 -VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 10 ID = -4.1A VDS =-16V 8 C, Capacitance (pF) Ciss 1200 6 800 4 400 Coss Crss 2 0 1 10 100 0 0 4 8 12 FOR TEST CIRCUIT SEE FIGURE 13 16 20 24 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10us 10 100us 1ms 1 10ms 10 TJ = 150 C 1 TJ = 25 C -ID , Drain Current (A) I V GS = 0 V 0.1 0.0 0.5 1.0 1.5 2.0 0.1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7700 5.0 VDS 4.0 RD VGS RG D.U.T. + -ID , Drain Current (A) 3.0 VGS 2.0 Pulse Width 1 s Duty Factor 0.1 % 1.0 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 0.0 25 50 75 100 125 150 VGS 10% TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms 100 D = 0.50 Thermal Response (Z thJA ) 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 PDM t1 t2 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - VDD 5 IRF7700 R DS(on) , Drain-to -Source On Resistance ( ) 0.026 0.022 R DS (on) , Drain-to-Source On Resistance ( ) 0.06 0.04 0.018 ID = -8.6A 0.014 VGS = -2.5V 0.02 VGS = -4.5V 0.00 0 20 40 60 80 -I D , Drain Current (A) 0.010 2.0 4.0 6.0 8.0 10.0 -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Fig 12. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS VG QGD 12V .2F .3F VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF7700 0.90 60 0.80 50 -V GS(th) , Variace (V) 0.70 40 0.60 Power (W) 150 ID = -250A 30 0.50 20 0.40 10 0.30 -50 0 50 100 0 0.01 0.10 1.00 10.00 100.00 T J , Temperature (C) Time (sec) Fig 14. Threshold Voltage Vs. Temperature Fig 15. Typical Power Vs. Time www.irf.com 7 IRF7700 TSSOP-8 Part Marking Information EXAMPLE: THIS IS AN IRF7702 LOT CODE (XX) PART NUMBER DAT E CODE (YW) XXYW 7702 TABLE 1 WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D DAT E CODE EXAMPLES: 9503 = 5C 9532 = EF 24 25 26 X Y Z TABLE 2 WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ET C.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 50 51 52 X Y Z TSSOP-8 Tape and Reel 8LT SSOP (MO-153AA) 16 mm O 13" 16mm 8 mm FEED DIRECT ION NOT ES: 1. T APE & REEL OUT LINE CONFORMS T O EIA-481 & EIA-541. 8 www.irf.com IRF7700 TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00 www.irf.com 9 |
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