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PD - 94221
IRF7703
HEXFET(R) Power MOSFET
l l l l l
Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel
1 2 3 4
VDSS
-40V
RDS(on) max (m) )
28@VGS = -10V 45@VGS = -4.5V
ID
-6.0A -4.8A
Description
HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the deD
8 7 6
G
S
8= 7= 6= 5= D S S D
5
signer with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
1= 2= 3= 4=
D S S G
TSSOP-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-40 -6.0 -4.7 -24 1.5 0.96 0.012 20 -55 to + 150
Units
V A
W W/C V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
83
Units
C/W
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05/11/01
IRF7703
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. -40 --- --- --- -1.0 10 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.030 --- --- --- --- --- --- --- --- 41 16 16 43 405 155 77 5220 416 337
Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 28 VGS = -10V, ID = -6.0A m 45 VGS = -4.5V, ID = -4.8A -3.0 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -6.0A -15 VDS = -32V, VGS = 0V A -25 VDS = -32V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 62 ID = -6.0A 25 nC VDS = -20V 24 VGS = -10V --- VDD = -20V --- ID = -1.0A ns --- RG = 6.0 --- VGS = -10V --- VGS = 0V --- pF VDS = -25V --- = 1.0kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 34 56 -1.5 A -24 -1.2 51 84 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.5A, VGS = 0V TJ = 25C, IF = -1.5A di/dt = -100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1 in square Cu board
Pulse width 400s; duty cycle 2%.
2
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IRF7703
10000 1000 100 10 1 0.1
VGS -15V -10V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM -2.7V TOP
1000
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
100
VGS -15V -10V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM -2.7V TOP
10
-2.7V
0.01 0.001 0.1 1 10 100
1
-2.7V 20s PULSE WIDTH Tj = 150C
20s PULSE WIDTH Tj = 25C
0.1 0.1 1
10
100
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
TJ = 150 C
10
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -6.0A
-I D , Drain-to-Source Current (A)
1.5
1
TJ = 25 C
1.0
0.1
0.5
0.01 2.0
V DS = -15V 20s PULSE WIDTH 4.0 4.5 2.5 3.0 3.5 5.0
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7703
100000 VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd Coss = C + C ds gd 20
ID = -6.0
-VGS , Gate-to-Source Voltage (V)
V DS = 32V V DS = 20V
16
C, Capacitance(pF)
10000
Ciss
12
1000
8
Coss Crss
4
100 1 10 100 0 0 30 60 90 120 150
-V DS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100 OPERATION IN THIS AREA LIMITED BY R DS(on)
-ISD , Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)
TJ = 150 C
10
10
100sec
1msec
1
TJ = 25 C
1
10msec
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2
0.1 0
Tc = 25C Tj = 150C Single Pulse 1 10 100 1000
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7703
6.0
VDS
4.8
RD
VGS RG
D.U.T.
+
-ID , Drain Current (A)
3.6
VGS
Pulse Width 1 s Duty Factor 0.1 %
2.4
Fig 10a. Switching Time Test Circuit
1.2
td(on) tr t d(off) tf
VGS
0.0 25 50 75 100 125 150
10%
TC , Case Temperature ( C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
100 D = 0.50
Thermal Response (Z thJC )
0.20 10 0.10 0.05 0.02 1 0.01
0.1
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 1 10 0.0001 0.001 0.01 0.1 100
PDM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
VDD
5
IRF7703
RDS(on) , Drain-to -Source On Resistance ( )
0.05
0.040
RDS (on) , Drain-to-Source On Resistance ( )
0.035
VGS = -4.5V
0.04
0.03
ID = -6.0A
0.030
0.025
0.02
0.020
VGS = -10V
0.01 3.0 5.0 7.0 9.0 11.0 13.0 15.0
0.015 0 5 10 15 20 25
-V GS, Gate -to -Source Voltage (V)
-I D , Drain Current (A)
Fig 12. Typical On-Resistance Vs. Gate Voltage
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50K
QG QGS VG QGD
12V
.2F .3F
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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+
D.U.T.
-
VDS
IRF7703
3.0 150 130 2.5 110
-V GS(th) Gate threshold Voltage (V)
ID = -250A
Power (W)
90 70 50
2.0
1.5 30 1.0 -75 -50 -25 0 25 50 75 100 125 150 10 0.00 0.01 0.10
T J , Temperature ( C )
Time (sec)
Fig 15. Typical Threshold Voltage Vs. Junction Temperature
Fig 16. Typical Power Vs. Time
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IRF7703
TSSOP-8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7702
LOT CODE (XX) PART NUMBER
DAT E CODE (YW)
XXYW 7702
T ABLE 1 WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ET C.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D
DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF
24 25 26
X Y Z
T ABLE 2 WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D
50 51 52
X Y Z
TSSOP-8 Tape and Reel
8LT SSOP (MO-153AA)
16 mm
O 13"
16mm 8 mm FEED DIRECT ION NOT ES: 1. T APE & REEL OUT LINE CONFORMS T O EIA-481 & EIA-541.
8
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IRF7703
TSSOP-8 Package Outline
Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/01
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