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PD - 95855
SMPS MOSFET
Applications
l l l l
IRFB16N50K
HEXFET(R) Power MOSFET
Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Low RDS(on)
VDSS
500V
RDS(on) typ.
285m:
ID
17A
Benefits
l l l l
G
S D
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C Continuous Drain Current, VGS @ 10V ID @ TC = 100C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM
Max.
17 11 68 280 2.3 30 8.0 -55 to + 150
Units
A W W/C V V/ns C
c
PD @TC = 25C VGS dv/dt TJ TSTG
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and
e
Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw 300 (1.6mm from case ) 10 lbfyin (1.1Nym)
Avalanche Characteristics
EAS IAR EAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentAc Repetitive Avalanche Energy Typ. --- --- --- Max. 310 17 28 Units mJ A mJ
c
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.44 --- 62
Units
C/W
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1
03/11/04
IRFB16N50K
Static @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
500 --- --- 3.0 --- --- --- --- --- 0.58 285 --- --- --- --- --- --- --- 350 5.0 50 250 100 -100 nA V
Conditions
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 10A
f
V A
VDS = VGS, ID = 250A VDS = 500V, VGS = 0V VDS = 400V, VGS = 0V, TJ = 125C VGS = 30V VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
Parameter
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
5.7 --- --- --- --- --- --- --- --- --- --- --- --- --- --- 60 18 28 20 77 38 30 2210 240 26 2620 63 120 --- 89 27 43 --- --- --- --- --- --- --- --- --- --- pF ns nC S ID = 17A VDS = 400V VGS = 10V ID = 17A RG = 8.8 VGS = 10V VGS = 0V VDS = 25V
Conditions
VDS = 50V, ID = 10A
f f
VDD = 250V
= 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 400V, = 1.0MHz VGS = 0V, VDS = 0V to 400V
e
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
Min. Typ. Max. Units Conditions
--- --- --- --- --- --- --- 490 17 68 1.5 730 A A V ns MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 17A, VGS = 0V TJ = 25C, IF = 17A
G S D
ch
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
f
--- 5710 8560 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 2.2mH, RG = 25, IAS = 17A.
ISD 17A, di/dt 340A/s, VDD V(BR)DSS, TJ 150C. Pulse width 300s; duty cycle 2%.
2
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IRFB16N50K
100
TOP VGS 15V 10V 8.0V 7.5V 7.0V 6.5V 6.0V 5.5V
100
TOP VGS 15V 10V 8.0V 7.5V 7.0V 6.5V 6.0V 5.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
BOTTOM
10
BOTTOM
5.5V
1
5.5V
1
0.1 0.1 1
60s PULSE WIDTH Tj = 25C 10 100
60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance (Normalized)
3.0
ID, Drain-to-Source Current ()
2.5
ID = 17A VGS = 10V
T J = 150C
2.0
10
1.5
T J = 25C VDS = 100V 60s PULSE WIDTH 1.0 4 5 6 7 8 9 10 11 12 13 14 15 16
1.0
0.5
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRFB16N50K
100000 VGS = 0V, f = 1 MHZ Ciss = C gs + C gd, C ds SHORTED Crss = C gd Coss = C ds + C gd
12.0 ID= 17A
VGS, Gate-to-Source Voltage (V)
10000
10.0
C, Capacitance(pF)
Ciss
1000
VDS= 400V VDS= 250V VDS= 100V
8.0
Coss
100
6.0
Crss
10
4.0
2.0
1 1 10 100 1000
0.0 0 10 20 30 40 50 60
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
100.00
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
T J = 150C 10.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100sec 1msec
T J = 25C 1.00
1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 10msec 1000 10000
VGS = 0V 0.10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFB16N50K
20
V DS VGS
RD
ID, Drain Current (A)
15
RG 10V
D.U.T.
+
- VDD
10
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0 25 50 75 100 125 150
10% VGS
td(on) tr t d(off) tf
T C , Case Temperature (C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20 0.10 0.05
0.01
0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 0.01 0.1 1
0.001 1E-006 1E-005 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFB16N50K
600
EAS , Single Pulse Avalanche Energy (mJ)
500
ID 7.6A 11A BOTTOM 17A TOP
VDS L
15V
400
DRIVER
300
RG D.U.T
IAS
20V
200
tp
+ - VDD
A
0.01
100
Fig 13a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Fig 12. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS tp
I AS
Fig 13b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
VGS
D.U.T. + V - DS
QGS VG
QGD
VGS
3mA
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Gate Charge Test Circuit
Fig 14b. Basic Gate Charge Waveform
6
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IRFB16N50K
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 15. For N-Channel HEXFET(R) Power MOSFETs
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IRFB16N50K
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
A A DS A I 6 A D AT DT C U ) @ G Q H 6 Y @ G 6 I P D U 6 I S @ U DI S @ 7 H V I A U S 6 Q ( ' & A @ 9 P 8 A U P G S D@ DA U 8 @ S & ( ( A ( A X X A I P A 9 @ G 7 H @ T T 6 P B P G
For GB Production
@Y6HQG@) UCDTADTA6IADSA A GPUA8P9@A &'( 6TT@H7G@9APIAXXA (A ((& DIAUC@A6TT@H7GAGDI@AA8A DIU@SI6UDPI6G S@8UDAD@S GPBP GPUA8P9@ Q6SUAIVH7@S
TO-220AB package is not recommended for Surface Mount Application.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/04
A 8 A A @ DI G A G 7 H @ T T 6 A @ C U A DI
@ 9 P 8 A @ U 6 9 & ( ( A 2 A & A S 6 @
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
G 7 H @ T T 6 @ 9 P 8 A U P G
( A F @ @ X 8 A @ DI G
96U@A8P9@
8
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