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PD - 91813 SMPS MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l IRFIB6N60A HEXFET(R) Power MOSFET VDSS 600V Rds(on) max 0.75W ID 5.5A TO-220 FULLPAK GDS Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 5.5 3.5 37 60 0.48 30 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V V/ns C Typical SMPS Topologies: l l Single Transistor Forward Active Clamped Forward Notes through are on page 8 www.irf.com 1 01/12/99 IRFIB6N60A Static @ TJ = 25C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 600 --- 2.0 --- --- --- --- Typ. --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A 0.75 W VGS = 10V, ID = 3.3A 4.0 V VDS = VGS, ID = 250A 25 VDS = 600V, VGS = 0V A 250 VDS = 480V, VGS = 0V, TJ = 150C 100 V GS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 5.5 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 13 25 30 22 1400 180 7.1 1957 49 96 Max. Units Conditions --- S VDS = 25V, ID = 5.5A 49 ID = 9.2A 13 nC VDS = 400V 20 VGS = 10V, See Fig. 6 and 13 --- VDD = 300V --- ID = 9.2A ns --- RG = 9.1W --- RD = 35.5W,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 480V, = 1.0MHz --- VGS = 0V, VDS = 0V to 480V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 290 9.2 6.0 Units mJ A mJ Thermal Resistance Parameter RqJC RqJA Junction-to-Case Junction-to-Ambient Typ. --- --- Max. 2.1 65 Units C/W Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 5.5 showing the A G integral reverse --- --- 37 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 9.2A, VGS = 0V --- 530 800 ns TJ = 25C, IF = 9.2A --- 3.0 4.4 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFIB6N60A 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V TOP 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V TOP 10 1 4.7V 20s PULSE WIDTH TJ = 25 C 1 10 100 4.7V 20s PULSE WIDTH TJ = 150 C 1 10 100 0.1 0.1 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 9.2A I D , Drain-to-Source Current (A) 2.5 10 TJ = 150 C 2.0 1.5 TJ = 25 C 1 1.0 0.5 0.1 4.0 V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFIB6N60A 2400 2000 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 ID = 9.2A 400V VDS = 480V VDS = 300V VDS = 120V 16 C, Capacitance (pF) Ciss 1600 Coss 1200 12 8 800 400 Crss 4 0 1 10 100 1000 A 0 0 10 20 FOR TEST CIRCUIT SEE FIGURE 13 30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 I D , Drain Current (A) 100 TJ = 150 C 10us 10 100us 1ms 1 10ms 1 TJ = 25 C 0.1 0.2 V GS = 0 V 0.5 0.7 1.0 1.2 0.1 TC = 25 C TJ = 150 C Single Pulse 10 100 1000 10000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFIB6N60A 6.0 VDS VGS RG RD 5.0 D.U.T. + ID , Drain Current (A) 4.0 -V DD 10V 3.0 Pulse Width 1 s Duty Factor 0.1 % 2.0 Fig 10a. Switching Time Test Circuit VDS 90% 1.0 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 10 0.1 0.02 0.01 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFIB6N60A EAS , Single Pulse Avalanche Energy (mJ) 600 TOP 500 15V BOTTOM ID 4.1A 5.8A 9.2A VDS L DRIVER 400 RG 20V D.U.T IAS tp 300 + - VDD A 0.01 200 Fig 12a. Unclamped Inductive Test Circuit 100 0 25 50 75 100 125 150 V(BR)DSS tp Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFIB6N60A Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFIB6N60A Package Outline TO-220 Fullpak Outline Dimensions are shown in millimeters (inches) 10.60 (.417) 10.40 (.409) o 3.40 (.133) 3.10 (.123) -A3.70 (.145) 3.20 (.126) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 7.10 (.280) 6.70 (.263) 16.00 (.630) 15.80 (.622) 1.15 (.045) MIN. 1 2 3 NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982 2 CONTROLLING DIMENSION: INCH. 3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C D A 3X 1.40 (.055) 1.05 (.042) 3X 0.90 (.035) 0.70 (.028) 0.25 (.010) 2.54 (.100) 2X M AM B 3X 0.48 (.019) 0.44 (.017) B 2.85 (.112) 2.65 (.104) MINIMUM CREEPAGE DISTANCE BETWEEN A-B-C-D = 4.80 (.189) TO-220 Fullpak Part Marking Information EXAMPLE : THIS IS AN IRFI840G WITH ASSEMBLY LOT CODE E401 A INTERNATIONAL IRFI840G RECTIFIER LOGO E401 9245 PART NUMBER ASSEMBLY LOT CODE Notes: DATE CODE (YYWW) YY = YEAR WW = WEEK Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25C, L = 6.8mH RG = 25W, IAS = 9.2A. (See Figure 12) ISD 9.2A, di/dt 50A/s, VDD V(BR)DSS, TJ 150C t=60s, f=60Hz WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 5/99 8 www.irf.com |
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