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P-CHANNEL 20V - 0.14 - 2.5A SO-8 2.7V-DRIVE STripFETTM II MOSFET PLUS SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICS MOSFET VDSS 20 V SCHOTTKY IF(AV) 3A RDS(on) < 0.20 (@4.5V) < 0.25 (@2.7V) VRRM 30 V ID 2.5 A VF(MAX) 0.51 V
STS2DPFS20V
DESCRIPTION This product associates the latest low voltage StripFEToe in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol VDS
VDGR VGS ID ID IDM(*) Ptot
Parameter
Dain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kW) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C
Value
20 20 12 2.5 1.58 10 2
Unit
V V V A A A W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol VRRM Parameter Value Unit
Repetitive Peak Reverse Voltage RMS Forward Curren Average Forward Current Surge Non Repetitive Forward Current Non Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage TL=125 oC =0.5 tp= 10 ms Sinusoidal tp=100 s
30 20 3 75 1 10000
V A A A A V/s
IF(RMS) IF(AV) IFSM IRSM
dv/dt
(*) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed November 2002
.
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TERMAL DATA
Rthj-amb Rthj-amb Tstg Tj
(*)Thermal
(*)Thermal
Resistance Junction-ambient MOSFET Resistance Junction-ambient SCHOTTKY Storage Temperature Range Maximum Lead Temperature For Soldering Purpose
MAX
62.5 100 -55 to 150 150
oC/W oC/W oC oC
(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 12 V Min. 20 1 10 100 Typ. Max. Unit V A A nA
IGSS
ON (1)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 4.5 V VGS = 2.7 V ID = 250 A ID = 1 A ID = 1 A Min. 0.6 0.14 0.20 0.20 0.25 Typ. Max. Unit V
SCHOTTCKY STATIC ELECTRICAL CHARACTERISTICS
Symbol IR(*) VF(*) Parameter Reversed Leakage Current Forward Voltage drop Test Conditions TJ= 25 oC TJ= 125 oC TJ= 25 oC TJ= 125 oC VR= 30 V VR= 30 V IF= 3 A IF= 3 A Min. Typ. 30 0.40 Max. 0.2 100 0.51 0.46 Unit mA mA mA mA
DYNAMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS= 15 V ID=1 A Min. Typ. 4 315 87 17 Max. Unit S pF pF pF
VDS = 15V, f = 1 MHz, VGS = 0
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ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 1 A VDD = 10 V RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 3) VDD= 10V ID= 2A VGS=4.5V Min. Typ. 38 30 3.5 0.34 0.8 4.7 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 1 A VDD = 10 V RG = 4.7, VGS = 4.5 V (Resistive Load, Figure 3) Min. Typ. 45 11 Max. Unit ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 2 A VGS = 0 15 7.5 1 Test Conditions Min. Typ. Max. 2 10 1.2 Unit A A V ns nC A
di/dt = 100A/s ISD = 2 A VDD = 10 V Tj = 150C (see test circuit, Figure 5)
(*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
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Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.
.
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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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SO-8 MECHANICAL DATA
DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019
0016023
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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