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| (R) T405Q-600B-TR & T405Q-600H Sensitive 4Q 4A TRIAC MAIN FEATURES Symbol IT(RMS) VDRM/VRRM IGT Value 4 600 5 Unit A V mA A2 G A2 A1 A2 DESCRIPTION The T405Q-600B-TR and the T405Q-600H 4 quadrants sensitive TRIACs are intended in general purpose applications where high surge current capability is required, such as irrigation systems. These TRIACs feature a gate current capability sensitivities of 5mA. A2 G A1 A2 A1 G DPAK (T4-B) IPAK (T4-H) ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM It dI/dt IGM PG(AV) Tstg Tj 2 Parameter RMS on-state current (Full sine wave) DPAK / IPAK Non repetitive surge peak on-state current (Full cycle, Tj initial = 25C ) I t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT, tr 100ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range 2 Value Tc= 110C t = 20ms t = 16.7ms 4 35 38 6 50 4 0.5 - 40 to + 150 - 40 to + 125 F = 50Hz F = 60Hz Unit A A A2s A/s A W C tp = 10 ms Repetitive F = 100 Hz tp = 20s Tj = 125C Tj = 125C July 2002 - Ed: 1A 1/7 T405Q-600B-TR & T405Q-600H ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol IGT (1) Test Conditions VD=12V RL=30 Quadrant I-II-III IV ALL MAX. MAX. MIN. MAX. I - III - IV II MAX. MIN. MIN. T405Q 5 10 1.3 0.2 10 10 15 10 2 Unit mA V V mA mA V/s V/s VGT VGD IH (2) VD=VDRM RL=3.3k Tj = 125C IT= 100mA IG = 1.2IGT VD=67% VDRM Gate open Tj = 125C (dI/dt)c = 1.8 A/ms Tj = 125C ALL IL dV/dt (2) (dV/dt)c (2) STATIC CHARACTERISTICS Symbol VTM(2) VTO Rd (2) (2) Test Conditions ITM = 5 A tp = 380s Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C MAX. MAX. MAX. MAX Value 1.5 0.85 100 5 1 Unit V V m A mA Threshold voltage Dynamic resistance VDRM = VRRM IDRM IRRM Note 1: Minimum IGT is guaranted at 5% of IGT max. Note 2: For both polarities of A2 referenced to A1. THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-a) Junction to case (AC) Junction to ambient S = 0.5 cm DPAK IPAK Parameter Value 3 70 100 Unit C/W C/W PRODUCT SELECTOR Part Number T405Q-600B-TR T405Q-600H Voltage 600V 600V Sensitivity 5 mA 5 mA Type Sensitive Sensitive Package DPAK IPAK 2/7 T405Q-600B-TR & T405Q-600H ORDERING INFORMATION T TRIAC SERIES 4 05 Q - 600 B (-TR) Packing mode: Blank: Tube -TR: DPAK Tape &reel Package: B: DPAK H: IPAK Voltage: 600V Current: 4A Sensitivity: 5mA (Q1-Q2-Q3) 10mA (Q4) Number of quadrants: 4 OTHER INFORMATION Part Number T405Q-600B-TR T405Q-600H Marking T405Q600 T405Q600 Weight 0.3 g 0.4 g Base quantity 2500 75 Packing mode Tape & reel Tube 3/7 T405Q-600B-TR & T405Q-600H Fig. 1: Maximum power dissipation versus RMS on-state current. P(W) 5 =180 Fig. 2: RMS on-state current versus case temperature. IT(RMS)(A) 5.0 4.5 4.0 3.5 =180 4 3 3.0 2.5 2 180 2.0 1.5 1 IT(RMS)(A) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1.0 0.5 0.0 Tc(C) 0 25 50 75 100 125 3.5 4.0 Fig. 3: Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] 1.E+00 Fig. 4: On-state characteristics (maximum values). ITM(A) 100 Tj=25C Zth(j-c) Tj=125C 1.E-01 Zth(j-c) 10 1.E-02 tP(s) 1.E-03 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1 0 1 2 3 4 VTM(V) 5 6 7 Tj max. : Vto = 0.85 V Rd = 100 m 8 9 10 Fig. 5: Surge peak on-state current versus number of cycles. ITSM(A) 40 35 30 25 20 15 10 5 Repetitive TC=110C Non repetitive Tj initial=25C t=20ms Fig. 6: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. ITSM(A), It(As) 1000 Tj initial=25C One cycle 100 dI/dt limitation: 50A/s ITSM 10 It Number of cycles 0 1 10 100 1000 1 0.01 0.10 tp(ms) 1.00 10.00 4/7 T405Q-600B-TR & T405Q-600H Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). IGT, IH, IL[Tj] / IGT, IH, IL [Tj = 25C] 3.0 2.5 2.0 IGT Fig. 8: Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical values). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.0 1.8 1.6 1.4 1.2 1.0 0.8 1.5 1.0 0.5 Tj(C) 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 IH & I L 0.6 0.4 0.2 0.0 0.1 1.0 10.0 (dV/dt)c (V/s) Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. (dI/dt)c [Tj] / (dI/dt)c [Tj = 125C] 8 7 6 5 4 3 2 1 Fig. 10: Relative variation of static dV/dt immunity versus junction temperature. dV/dt [Tj] / dV/dt [Tj = 125C] 8 VD=VR=400V 7 6 5 4 3 2 1 Tj(C) 0 25 50 75 100 125 Tj(C) 0 25 50 75 100 125 Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board FR4, Cu = 35m). Rth(j-a)(C/W) 100 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20 S(cm) 5/7 T405Q-600B-TR & T405Q-600H PACKAGE MECHANICAL DATA DPAK DIMENSIONS Millimeters Inches Min. Max Min. Max. 2.20 2.40 0.086 0.094 0.90 1.10 0.035 0.043 0.03 0.23 0.001 0.009 0.64 0.90 0.025 0.035 5.20 5.40 0.204 0.212 0.45 0.60 0.017 0.023 0.48 0.60 0.018 0.023 6.00 6.20 0.236 0.244 6.40 6.60 0.251 0.259 4.40 4.60 0.173 0.181 9.35 10.10 0.368 0.397 0.80 typ. 0.031 typ. 0.60 1.00 0.023 0.039 0 8 0 8 REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 FOOTPRINT 6.7 6.7 3 3 1.6 2.3 2.3 1.6 6/7 T405Q-600B-TR & T405Q-600H PACKAGE MECHANICAL DATA IPAK DIMENSIONS REF. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 Millimeters Inches Min. Typ. Max. Min. Typ. Max. 2.2 2.4 0.086 0.094 0.9 1.1 0.035 0.043 0.7 1.3 0.027 0.051 0.64 0.9 0.025 0.035 5.2 5.4 0.204 0.212 0.85 0.033 0.3 0.035 0.95 0.037 0.45 0.6 0.017 0.023 0.48 0.6 0.019 0.023 6 6.2 0.236 0.244 6.4 6.6 0.252 0.260 4.4 4.6 0.173 0.181 15.9 16.3 0.626 0.641 9 9.4 0.354 0.370 0.8 1.2 0.031 0.047 0.8 1 0.031 0.039 10 10 A E B2 L2 C2 D H L L1 B6 B3 B V1 A1 B5 G C A3 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7 |
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