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| DATA SHEET NPN SILICON RF TRANSISTOR 2SC5338 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES * High gain: S21e = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz 2 * Low distortion, low voltage: IM2 = -55 dB TYP., IM3 = -76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBV/75 * 4-pin power minimold package with improved gain from the 2SC4703 ORDERING INFORMATION Part Number 2SC5338 2SC5338-T1 Quantity 25 pcs (Non reel) 1 kpcs/reel * Magazine case * 12 mm wide embossed taping * Collector face the perforation side of the tape Supplying Form Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 25 12 2.5 150 1.8 150 -65 to +150 Unit V V V mA W C C Tj Tstg 2 Note Mounted on 16 cm x 0.7 mm (t) ceramic substrate (Copper plating) Because this product uses high-frequency technology, avoid excessive static electricity, etc. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P10940EJ2V0DS00 (2nd edition) Date Published August 2001 NS CP(K) Printed in Japan The mark * shows major revised points. (c) 1996, 2001 2SC5338 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance 2nd Order Intermoduration Distortion fT S21e NF Cre Note 2 2 Symbol Test Conditions MIN. TYP. MAX. Unit ICBO IEBO hFE Note 1 VCB = 20 V, IE = 0 mA VBE = 2 V, IC = 0 mA VCE = 5 V, IC = 50 mA - - 50 - - - 1.5 1.5 250 A A - VCE = 5 V, IC = 50 mA VCE = 5 V, IC = 50 mA, f = 1 GHz VCE = 5 V, IC = 50 mA, f = 1 GHz VCB = 5 V, IE = 0 mA, f = 1 MHz IC = 50 mA, Vin = 105 dBV/75 , f = 190 - 90 MHz IC = 50 mA, Vin = 105 dBV/75 , f = 2 x 190 - 200 MHz VCE = 5 V VCE = 10 V VCE = 5 V VCE = 10 V - 8.5 - - - 6.0 10 - 1.0 -55 -63 - - 3.5 2.0 - - - - GHz dB dB pF dB IM2 3rd Order Intermoduration Distortion IM3 - - -76 -83 dB Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank Marking hFE Value SH SH 50 to 100 SF SF 80 to 160 SE SE 125 to 250 2 Data Sheet P10940EJ2V0DS 2SC5338 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (W) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) 5.0 f = 1 MHz 3.0 2.0 2.0 Mounted on Ceramic Substrate (16 cm2 x 0.7 mm (t) ) 1.0 1.0 0.5 0.3 1 3 5 10 20 30 0 50 100 150 Ambient Temperature TA (C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 1 000 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 120 100 80 60 40 20 IB = 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA Collector Current IC (mA) 100 VCE = 10 V 5V 10 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 Collector Current IC (mA) 0 2 4 6 8 10 12 14 Base to Emitter Voltage VBE (V) Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 500 Insertion Power Gain |S21e|2 (dB) INSERTION POWER GAIN vs. COLLECTOR CURRENT f = 1 GHz VCE = 10 V 10 5V DC Current Gain hFE VCE = 10 V 100 50 5V 5 10 0.1 1 10 100 1 000 0 5 7 10 20 50 70 100 Collector Current IC (mA) Collector Current IC (mA) Data Sheet P10940EJ2V0DS 3 2SC5338 NOISE FIGURE vs. COLLECTOR CURRENT 7 6 Noise Figure NF (dB) VCE = 5 V f = 1 GHz 5 4 3 2 1 0 1 3 5 10 20 50 100 Collector Current IC (mA) 2nd Order Intermodulation Distortion IM2 (dB) -70 3rd Order Intermodulation Distortion IM3 (dB) IM2 vs. COLLECTOR CURRENT Vin = 105 dBV/75 f = 190 - 90 MHz IM3 vs. COLLECTOR CURRENT -90 Vin = 105 dBV/75 f = 2 x 190 - 200 MHz -80 VCE = 10 V -70 -60 VCE = 10 V -50 -60 5V -50 10 5V -40 10 20 50 100 200 20 50 100 200 Collector Current IC (mA) Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 4 Data Sheet P10940EJ2V0DS 2SC5338 S-PARAMETERS VCE = 5 V, IC = 50 mA Frequency (GHz) MAG. S11 ANG. (deg.) -61.5 -103.0 -123.8 -137.2 -147.7 -154.3 -161.1 -163.9 -168.0 -175.1 -179.9 179.8 171.9 168.9 165.2 159.6 156.6 154.1 150.3 148.4 MAG. S21 ANG. (deg.) 138.5 116.8 106.3 99.5 94.5 91.3 88.6 86.2 84.5 83.3 81.8 78.9 69.6 66.2 65.3 63.9 62.9 62.0 60.8 59.9 MAG. S12 ANG. (deg.) 64.9 53.1 57.8 62.1 63.7 65.9 66.2 68.9 72.1 72.0 76.4 73.7 77.8 75.7 77.7 77.7 77.4 75.5 74.9 75.9 MAG. S22 ANG. (deg.) -39.7 -62.1 -72.8 -75.7 -79.4 -83.2 -82.8 -85.0 -81.6 -79.9 -75.5 -75.3 -82.4 -83.6 -83.4 -82.7 -81.7 -83.5 -86.3 -91.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 0.642 0.521 0.464 0.428 0.408 0.390 0.374 0.360 0.348 0.351 0.329 0.328 0.319 0.297 0.307 0.308 0.303 0.309 0.312 0.315 19.689 13.393 9.708 7.480 6.078 5.104 4.394 3.880 3.527 3.224 3.111 3.078 2.914 2.501 2.285 2.115 1.993 1.880 1.786 1.704 0.026 0.045 0.053 0.059 0.072 0.080 0.088 0.097 0.110 0.119 0.125 0.144 0.157 0.166 0.182 0.192 0.201 0.219 0.222 0.242 0.603 0.461 0.359 0.304 0.289 0.275 0.277 0.261 0.271 0.268 0.276 0.321 0.320 0.291 0.325 0.305 0.313 0.327 0.321 0.341 VCE = 5 V, IC = 100 mA Frequency (GHz) MAG. S11 ANG. (deg.) -73.2 -112.8 -133.5 -146.3 -155.4 -160.9 -166.8 -169.8 -173.9 -178.9 176.3 175.3 167.7 165.3 160.9 157.0 154.7 152.0 147.9 146.6 MAG. S21 ANG. (deg.) 134.7 113.6 103.3 96.7 92.0 89.2 86.9 84.3 82.7 81.8 80.4 77.2 67.5 64.6 63.4 61.7 60.9 60.3 58.8 57.8 MAG. S12 ANG. (deg.) 58.3 53.9 54.2 55.6 58.6 57.6 61.4 64.2 66.9 67.0 67.4 67.9 68.5 71.3 70.8 68.8 69.4 69.1 68.8 66.2 MAG. S22 ANG. (deg.) -45.3 -71.0 -82.3 -86.1 -90.2 -95.6 -96.0 -95.6 -93.9 -91.3 -86.5 -86.4 -94.6 -95.5 -96.3 -92.3 -91.1 -93.7 -98.1 -98.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 0.647 0.529 0.480 0.459 0.443 0.424 0.406 0.401 0.396 0.391 0.361 0.366 0.363 0.337 0.352 0.349 0.352 0.353 0.354 0.354 21.091 13.280 9.390 7.213 5.826 4.890 4.206 3.711 3.372 3.093 2.950 2.984 2.788 2.413 2.194 2.017 1.900 1.810 1.730 1.633 0.039 0.060 0.072 0.079 0.090 0.102 0.111 0.120 0.135 0.143 0.157 0.166 0.178 0.192 0.210 0.220 0.236 0.248 0.252 0.261 0.793 0.561 0.409 0.360 0.333 0.315 0.297 0.292 0.288 0.294 0.298 0.338 0.359 0.320 0.322 0.314 0.329 0.339 0.336 0.342 Data Sheet P10940EJ2V0DS 5 2SC5338 VCE = 10 V, IC = 50 mA Frequency (GHz) MAG. S11 ANG. (deg.) -59.3 -97.0 -119.1 -133.2 -144.4 -150.8 -158.1 -161.3 -165.1 -172.7 -177.8 -178.3 171.3 171.0 164.5 159.5 157.3 154.8 150.4 148.7 MAG. S21 ANG. (deg.) 140.1 118.4 107.1 99.9 95.0 91.8 89.3 86.7 84.9 84.0 82.6 79.5 69.9 67.0 66.2 64.7 64.1 62.6 61.7 60.7 MAG. S12 ANG. (deg.) 68.2 57.8 55.0 56.4 56.6 58.7 59.6 61.4 63.9 66.0 65.6 66.2 67.6 69.7 70.5 69.1 70.0 70.0 69.4 68.4 MAG. S22 ANG. (deg.) -37.6 -62.0 -72.1 -77.1 -80.6 -86.2 -87.7 -87.8 -86.0 -83.2 -79.9 -80.5 -86.5 -86.7 -88.4 -85.6 -86.0 -87.8 -89.3 -92.9 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 0.699 0.540 0.461 0.423 0.403 0.383 0.355 0.338 0.333 0.322 0.303 0.306 0.295 0.276 0.283 0.282 0.283 0.287 0.290 0.300 21.061 14.088 10.216 7.898 6.431 5.407 4.640 4.093 3.723 3.406 3.245 3.278 3.074 2.644 2.397 2.208 2.088 1.986 1.886 1.787 0.037 0.057 0.066 0.076 0.087 0.099 0.110 0.118 0.129 0.137 0.150 0.159 0.168 0.180 0.198 0.208 0.220 0.232 0.247 0.254 0.860 0.629 0.464 0.409 0.375 0.363 0.327 0.323 0.310 0.324 0.333 0.371 0.377 0.347 0.363 0.342 0.344 0.366 0.371 0.361 VCE = 10 V, IC = 100 mA Frequency (GHz) MAG. S11 ANG. (deg.) -64.8 -106.4 -126.5 -140.1 -150.0 -156.3 -162.9 -165.5 -169.3 -177.1 177.9 179.4 170.1 165.6 161.9 157.9 153.7 150.7 148.8 147.2 MAG. S21 ANG. (deg.) 136.2 114.6 104.5 98.1 93.2 90.3 87.8 85.6 83.8 82.8 81.0 78.4 69.1 65.9 65.2 63.5 62.4 61.4 60.5 59.7 MAG. S12 ANG. (deg.) 62.4 53.0 56.6 58.4 65.6 67.0 70.9 71.6 72.5 73.9 75.0 75.5 78.1 75.6 80.5 78.1 78.2 75.9 75.4 75.0 MAG. S22 ANG. (deg.) -43.4 -62.7 -73.0 -77.1 -78.8 -82.2 -82.1 -82.9 -79.5 -79.3 -73.6 -72.3 -80.4 -81.0 -82.6 -81.4 -78.7 -82.1 -82.8 -86.9 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 0.651 0.520 0.460 0.420 0.395 0.384 0.367 0.350 0.343 0.339 0.316 0.315 0.309 0.287 0.303 0.293 0.301 0.303 0.306 0.311 21.694 14.288 10.214 7.822 6.355 5.314 4.569 4.037 3.649 3.353 3.193 3.217 3.026 2.592 2.374 2.179 2.054 1.945 1.840 1.753 0.029 0.042 0.051 0.061 0.070 0.077 0.089 0.095 0.106 0.117 0.125 0.142 0.152 0.164 0.173 0.187 0.200 0.214 0.225 0.240 0.588 0.435 0.330 0.284 0.270 0.257 0.258 0.241 0.257 0.258 0.261 0.311 0.324 0.280 0.308 0.295 0.307 0.313 0.321 0.332 6 Data Sheet P10940EJ2V0DS 2SC5338 PACKAGE DIMENSIONS 4-PIN POWER MINIMOLD (UNIT: mm) 4.50.1 2.1 1.6 0.8 0.3 1.50.1 1.55 0.85 3.950.25 0.8 MIN. E B E 0.1 0.46 0.06 0.420.06 1.5 3.0 0.420.06 2.450.1 C 0.250.02 PIN CONNECTIONS E : Emitter C: Collector B : Base Data Sheet P10940EJ2V0DS 7 2SC5338 * The information in this document is current as of August, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 |
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