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| Index of /ds/FZ/ Name Last modified Size Description Parent Directory FZT560.pdf FZT560A.pdf FZT649.pdf FZT660.pdf FZT660A.pdf FZT749.pdf FZT790A.pdf 03-Dec-99 15:45 03-Dec-99 15:45 22-Dec-99 00:08 03-Dec-99 15:45 03-Dec-99 15:45 22-Dec-99 00:08 22-Dec-99 00:08 44K 44K 28K 44K 44K 27K 44K FZT560/FZT560A Discrete Power & Signal Technologies July 1998 FZT560 / FZT560A C E B C SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted FZT560/FZT560A 60 80 5 3 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25C unless otherwise noted Max Characteristic FZT560/FZT560A PD RJA Total Device Dissipation Thermal Resistance, Junction to Ambient 2 62.5 W C/W Units (c) 1998 Fairchild Semiconductor Corporation Page 1 of 2 fzt560.lwpPrNA 7/10/98 revC FZT560/FZT560A NPN Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA IC = 100 A IE = 100 A VCB = 30 V VCB = 30 V, TA=100C IEBO Emitter Cutoff Current VEB = 4V 60 80 5 100 10 100 V V V nA uA nA ON CHARACTERISTICS* hFE DC Current Gain IC = 100 mA, VCE = 2 V IC = 500 mA, VCE = 2 V FZT560 FZT560A IC = 1 A, VCE = 2 V IC = 3 A, VCE = 2 V VCE(sat) Collector-Emitter Saturation Voltage IC = 1 A, IB = 100 mA IC = 3 A, IB = 300 mA VBE(sat) VBE(on) Base-Emitter Saturation Voltage Base-Emitter On Voltage IC = 1 A, IB = 100 mA IC = 1 A, VCE = 2 V FZT560 FZT560A 70 100 250 80 25 300 450 400 1.25 1 V V mV 300 550 - SMALL SIGNAL CHARACTERISTICS Cobo fT Output Capacitance Transition Frequency VCB = 10 V, IE = 0, f = 1MHz IC = 100 mA,VCE = 5 V, f=100MHz 75 30 pF - *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% (c) 1998 Fairchild Semiconductor Corporation Page 2 of 2 fzt560.lwpPrNA 7/10/98 revC FZT649 Discrete Power & Signal Technologies July 1998 FZT649 C E B C SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted FZT649 25 35 5 3 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25C unless otherwise noted Max Characteristic FZT649 PD RJA Total Device Dissipation Thermal Resistance, Junction to Ambient 2 62.5 W C/W Units (c) 1998 Fairchild Semiconductor Corporation Page 1 of 2 FZT649.lwpPrNC 7/10/98 revB FZT649 NPN Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA IC = 100 A IE = 100 A VCB = 30 V VCB = 30 V, TA=100C IEBO Emitter Cutoff Current VEB = 4V 25 35 5 100 10 100 V V V nA uA nA ON CHARACTERISTICS* hFE DC Current Gain IC = 50 mA, VCE = 2 V IC = 1 A, VCE = 2 V IC = 2 A, VCE = 2 V IC = 6 A, VCE = 2 V VCE(sat) Collector-Emitter Saturation Voltage IC = 1 A, IB = 100 mA IC = 3 A, IB = 300 mA VBE(sat) VBE(on) Base-Emitter Saturation Voltage Base-Emitter On Voltage IC = 1 A, IB = 100 mA IC = 1 A, VCE = 2 V 70 100 75 15 300 600 1.25 1 V V mV 300 - SMALL SIGNAL CHARACTERISTICS Cobo fT Output Capacitance Transition Frequency VCB = 10 V, IE = 0, f = 1MHz IC = 100 mA,VCE = 5 V, f=100MHz 150 50 pF - *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% (c) 1998 Fairchild Semiconductor Corporation Page 2 of 2 FZT649.lwpPrNC 7/10/98 revB (c) 1998 Fairchild Semiconductor Corporation Page 3 of 2 FZT649.lwpPrNC 7/10/98 revB FZT660/FZT660A Discrete Power & Signal Technologies July 1998 FZT660 / FZT660A C E B C SOT-223 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted FZT660/FZT660A 60 80 5 3 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25C unless otherwise noted Max Characteristic FZT660/FZT660A PD RJA Total Device Dissipation Thermal Resistance, Junction to Ambient 2 62.5 W C/W Units (c) 1998 Fairchild Semiconductor Corporation Page 1 of 2 fzt660.lwpPrPA 7/10/98 revC FZT660/FZT660A PNP Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA IC = 100 A IE = 100 A VCB = 30 V VCB = 30 V, TA=100C IEBO Emitter Cutoff Current VEB = 4V 60 80 5 100 10 100 V V V nA uA nA ON CHARACTERISTICS* hFE DC Current Gain IC = 100 mA, VCE = 2 V IC = 500 mA, VCE = 2 V FZT660 FZT660A IC = 1 A, VCE = 2 V IC = 3 A, VCE = 2 V VCE(sat) Collector-Emitter Saturation Voltage IC = 1 A, IB = 100 mA IC = 3 A, IB = 300 mA VBE(sat) VBE(on) Base-Emitter Saturation Voltage Base-Emitter On Voltage IC = 1 A, IB = 100 mA IC = 1 A, VCE = 2 V FZT660 FZT660A 70 100 250 80 25 300 550 500 1.25 1 V V mV 300 550 - SMALL SIGNAL CHARACTERISTICS Cobo fT Output Capacitance Transition Frequency VCB = 10 V, IE = 0, f = 1MHz IC = 100 mA,VCE = 5 V, f=100MHz 75 45 pF - *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Page 2 of 2 fzt660.lwpPrPA 7/10/98 revC FZT749 Discrete Power & Signal Technologies July 1998 FZT749 C E B C SOT-223 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted FZT749 25 35 5 3 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25C unless otherwise noted Max Characteristic FZT749 PD RJA Total Device Dissipation Thermal Resistance, Junction to Ambient 2 62.5 W C/W Units (c) 1998 Fairchild Semiconductor Corporation Page 1 of 2 fzt749.lwpPrPC 7/10/98 revB FZT749 FZT749 FZT749 PNP Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA IC = 100 A IE = 100 A VCB = 30 V VCB = 30 V, TA=100C IEBO Emitter Cutoff Current VEB = 4V 25 35 5 100 10 100 V V V nA uA nA ON CHARACTERISTICS* hFE DC Current Gain IC = 50 mA, VCE = 2 V IC = 1 A, VCE = 2 V IC = 2 A, VCE = 2 V IC = 6 A, VCE = 2 V VCE(sat) Collector-Emitter Saturation Voltage IC = 1 A, IB = 100 mA IC = 3 A, IB = 300 mA VBE(sat) VBE(on) Base-Emitter Saturation Voltage Base-Emitter On Voltage IC = 1 A, IB = 100 mA IC = 1 A, VCE = 2 V 70 100 75 15 300 600 1.25 1 V V mV 300 - SMALL SIGNAL CHARACTERISTICS Cobo fT Output Capacitance Transition Frequency VCB = 10 V, IE = 0, f = 1MHz IC = 100 mA,VCE = 5 V, f=100MHz 100 100 pF - *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Page 2 of 2 fzt749.lwpPrPC 7/10/98 revB FZT790A Discrete Power & Signal Technologies July 1998 FZT790A C E B C SOT-223 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted FZT790A 40 50 5 3 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25C unless otherwise noted Max Characteristic FZT790A PD RJA Total Device Dissipation Thermal Resistance, Junction to Ambient 2 62.5 W C/W Units (c) 1998 Fairchild Semiconductor Corporation Page 1 of 2 fzt790a.lwpPrPA 7/10/98 revB FZT790A PNP Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA IC = 100 A IE = 100 A VCB = 30 V VCB = 30 V, TA=100C IEBO Emitter Cutoff Current VEB = 4V 40 50 5 100 10 100 V V V nA uA nA ON CHARACTERISTICS* hFE DC Current Gain IC = 10 mA, VCE = 2 V IC = 500 mA, VCE = 2 V IC = 1 A, VCE = 2 V IC = 2 A, VCE = 2 V VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 5 mA IC = 1 A, IB = 10 mA IC = 2 A, IB = 50 mA VBE(sat) Base-Emitter Saturation Voltage IC = 1 A, IB = 10 mA 300 250 200 150 250 450 750 1 V mV 800 - SMALL SIGNAL CHARACTERISTICS fT Transition Frequency IC = 50 mA,VCE = 5 V, f=50MHz 100 - *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Page 2 of 2 fzt790a.lwpPrPA 7/10/98 revB |
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