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| NTF3055-160 Preferred Device Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Applications http://onsemi.com * * * * Power Supplies Converters Power Motor Controls Bridge Circuits 2.0 AMPERES 60 VOLTS RDS(on) = 160 mW N-Channel D MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate-to-Source Voltage - Continuous - Non-repetitive (tp 10 ms) Drain Current - Continuous @ TA = 25C - Continuous @ TA = 100C - Single Pulse (tp 10 s) Total Power Dissipation @ TA = 25C (Note 1.) Total Power Dissipation @ TA = 25C (Note 2.) Derate above 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 25 Vdc, VGS = 10 Vdc, IL(pk) = 6.0 Apk, L = 10 mH, VDS = 60 Vdc) Thermal Resistance - Junction to Ambient (Note 1.) - Junction to Ambient (Note 2.) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS Value 60 60 20 30 2.0 1.2 6.0 2.1 1.3 0.014 -55 to 175 65 Unit Vdc Vdc Vdc Vpk Adc Apk W W W/C C mJ 5160 L WW = Device Code = Location Code = Work Week 1 4 G S MARKING DIAGRAM ID ID IDM PD 2 3 SOT-223 CASE 318E STYLE 3 5160 LWW TJ, Tstg EAS PIN ASSIGNMENT C/W RJA RJA TL 72.3 114 260 C 4 Drain 1. When surface mounted to an FR4 board using 1 pad size, (Cu. Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, 2-2.4 oz. (Cu. Area 0.272 in2). 1 2 3 Gate Drain Source ORDERING INFORMATION Device NTF3055-160T1 NTF3055-160T3 NTF3055-160T3LF Package Shipping SOT-223 1000 Tape & Reel SOT-223 4000 Tape & Reel SOT-223 4000 Tape & Reel (c) Semiconductor Components Industries, LLC, 2001 1 July, 2001 - Rev. 0 Publication Order Number: NTF3055-160/D NTF3055-160 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3.) (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) V(BR)DSS 60 - IDSS - - IGSS - - - - 1.0 10 100 nAdc 72 72 - - Vdc mV/C Adc ON CHARACTERISTICS (Note 3.) Gate Threshold Voltage (Note 3.) (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3.) (VGS = 10 Vdc, ID = 1.0 Adc) Static Drain-to-Source On-Resistance (Note 3.) (VGS = 10 Vdc, ID = 2.0 Adc) (VGS = 10 Vdc, ID = 1.0 Adc, TJ = 150C) Forward Transconductance (Note 3.) (VDS = 8.0 Vdc, ID = 1.5 Adc) VGS(th) 2.0 - RDS(on) - VDS(on) - gfs - 0.142 0.270 1.8 0.384 - - Mhos 142 160 Vdc 3.1 6.6 4.0 - Vdc mV/C m DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance (VDS = 25 Vdc, VGS = 0 V, Vd V f = 1.0 MHz) Ciss Coss Crss - - - 200 68 26 280 100 40 pF SWITCHING CHARACTERISTICS (Note 4.) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 2.0 Adc, Vd 2 0 Ad VGS = 10 Vdc) (Note 3.) (VDD = 30 Vdc, ID = 2.0 Adc, VGS = 10 Vdc, Vdc RG = 9.1 ) (Note 3.) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 9.2 9.2 16 9.2 6.9 1.4 3.0 20 20 40 20 14 - - nC ns SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 2.0 Adc, VGS = 0 Vdc) (IS = 2.0 Adc, VGS = 0 Vdc, TJ = 150C) (Note 3.) VSD - - trr (IS = 2.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/s) (Note 3.) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. Switching characteristics are independent of operating junction temperatures. ta tb QRR - - - - 0.86 0.70 28.9 19.1 9.8 0.030 1.0 - - - - - C ns Vdc Reverse Recovery Time http://onsemi.com 2 NTF3055-160 3.6 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 3.2 2.8 2.4 2 1.6 1.2 0.8 0.4 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS = 10 V VGS = 4.5 V VGS = 8 V VGS = 5 V VGS = 7 V VGS = 6 V VGS = 5.5 V 2.8 2.4 2 1.6 1.2 0.8 0.4 0 3 3.4 3.8 4.2 4.6 5 5.4 5.8 6.2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TJ = 100C TJ = -55C TJ = 25C VDS 10 V Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE () RDS(on), DRAIN-TO-SOURCE RESISTANCE () Figure 2. Transfer Characteristics 0.28 VGS = 10 V 0.24 TJ = 100C 0.2 0.16 0.12 0.08 0.04 0 0 0.5 1 1.5 2 2.5 3 3.5 4 TJ = 25C TJ = -55C 0.28 VGS = 15 V 0.24 0.2 0.16 0.12 0.08 0.04 0 0 0.5 1 1.5 2 2.5 3 3.5 4 TJ = 25C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 3. On-Resistance versus Gate-to-Source Voltage VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 1 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) ID = 1 A VGS = 10 V IDSS, LEAKAGE (nA) 100 1000 Figure 4. On-Resistance versus Drain Current and Gate Voltage VGS = 0 V TJ = 150C TJ = 125C 10 TJ = 100C 0 10 20 30 40 50 60 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTF3055-160 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 560 VDS = 0 V 480 C, CAPACITANCE (pF) 400 320 240 160 80 0 10 Crss Ciss Coss Crss 5 VGS 0 VDS 5 10 15 20 25 Ciss VGS = 0 V TJ = 25C 12 QT VGS 8 6 4 2 0 0 ID = 2 A TJ = 25C 1 2 3 4 5 6 7 8 Q1 Q2 10 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 100 IS, SOURCE CURRENT (AMPS) VDS = 30 V ID = 2 A VGS = 10 V t, TIME (ns) 2 Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge VGS = 0 V TJ = 25C 1.6 10 td(off) td(on) tr tf 1.2 0.8 0.4 1 1 10 RG, GATE RESISTANCE () 100 0 0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.88 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance 100 ID, DRAIN CURRENT (AMPS) VGS = 20 V SINGLE PULSE TC = 25C EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 70 Figure 10. Diode Forward Voltage versus Current ID = 6 A 60 50 40 30 20 10 0 25 50 75 100 125 150 175 10 1 dc 0.1 10 ms 1 ms 0.01 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 100 s 10 s 10 100 0.001 0.1 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTF3055-160 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 100 D = 0.5 10 0.2 0.1 0.05 1 MIN PAD 1 OZ (Cu Area = 0.272 sq in) P(pk) 0.01 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1 10 t2 DUTY CYCLE, D = t1/t2 100 1000 t1 Figure 13. Thermal Response http://onsemi.com 5 NTF3055-160 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE K A F 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 S 1 2 B D L G J C 0.08 (0003) H M K INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 http://onsemi.com 6 NTF3055-160 Notes http://onsemi.com 7 NTF3055-160 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTF3055-160/D |
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