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| (R) XL0840 SENSITIVE GATE 0.8A SCRs A MAIN FEATURES Symbol IT(RMS) VDRM IGT Value 0.8 400 200 Unit A V K G A DESCRIPTION Thanks to its highly sensitive triggering levels, the XL0840 device is suitable for all high volumes applications where the available gate current is limited, such as Christmas lights control. K GA TO-92 ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM It dI/dt IGM PG(AV) Tstg Tj 2 Parameter RMS on-state current (180 conduction angle) Average on-state current (180 conduction angle) Non repetitive surge peak on-state current I t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT, tr 100ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range 2 Value TI = 55C TI = 55C Tj = 25C Tj = 25C Tj = 125C Tj = 125C Tj = 125C 0.8 0.5 8 7 0.24 30 1 0.1 - 40 to + 150 - 40 to + 125 Unit A A A A2s A/s A W C tp = 8.3 ms tp = 10 ms tp = 10 ms F = 60 Hz tp = 20s January 2002 - Ed: 1A 1/5 XL0840 ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol IGT VGT VGD VRG IH IL dV/dt VTM VTO Rd IDRM VD=VDRM RL=3.3k RGK = 1k IRG = 10A IT= 50mA RGK = 1k IG = 1mA RGK = 1k VD=67% VDRM ITM = 1.6A RGK = 1k Tj = 125C Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C Tj = 125C VD=12V RL=140 Test Conditions MAX. MAX. MIN. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. XL0840 200 0.8 0.1 8 5 6 75 1.95 1.0 600 1 100 Unit A V V V mA mA V/s V V m A tp = 380s Threshold voltage Dynamic resistance VDRM RGK = 1k THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-l) Parameter Junction to ambient (DC) Junction to lead (DC) Value 150 80 Unit C/W C/W PRODUCT SELECTOR Part Number XL0840 ORDERING INFORMATION Voltage 400V Sensitivity 200 A Package TO-92 X SENSITIVE SCR LIGHT CONTROL L 08 40 VOLTAGE: 40: 400V CURRENT:0.8A OTHER INFORMATION Part Number XL0840 Marking XL0840 Weight 0.2 g Base quantity 2500 Packing mode Bulk 2/5 XL0840 Fig. 1: Maximum average power dissipation versus average on-state current. P(W) 1.0 0.9 0.8 0.7 0.6 =180 Fig. 2-1: Average and D.C. on-state current versus lead temperature. IT(av)(A) 0.9 D.C. 0.8 0.7 0.6 =180 0.5 0.5 0.4 0.3 180 0.4 0.3 0.2 0.1 0.0 0.00 IT(av)(A) 0.2 0.1 0.0 Tlead(C) 0 25 50 75 100 125 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout). IT(av)(A) 0.7 0.6 0.5 0.4 D.C. Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration. K=[Zth(j-a)/Rth(j-a)] 1.E+00 =180 1.E-01 0.3 0.2 0.1 Tamb(C) 0.0 0 25 50 75 100 125 tp(s) 1.E-02 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). IGT, IH, IL[Tj] / IGT, IH, IL [Tj=25C] 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 IH & IL (Rgk=1kW) IGT Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values). IH [Rgk] / IH [Rgk=1k] 11 10 9 8 7 6 5 4 3 2 Tj=25C Tj(C) 1 0 0.01 0.10 Rgk(k) 1.00 10.00 3/5 XL0840 Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). dV/dt [Rgk] / dV/dt [Rgk=1k] 5 Tj=125C VD=270V dV/dt [Cgk] / dV/dt [Rgk=1k] 10 9 8 7 Tj=125C VD=270V Rgk=1kW 4 3 6 5 2 4 3 1 2 Rgk(k) 0 0.10 1.00 10.00 1 0 1.00 Cgk(nF) 10.00 Fig. 8: Surge peak on-state current versus number of cycles. Fig. 9: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. ITSM(A), I2t (A2s) 100.0 Tj initial=25C ITSM ITSM(A) 8 7 6 5 4 3 2 1 Repetitive Tlead=50C Non repetitive Tj initial=25C tp=10ms 10.0 1.0 It Number of cycles 0 1 10 100 1000 tp(ms) 0.1 0.01 0.10 1.00 10.00 Fig. 10: On-state characteristics (maximum values). ITM(A) 10.00 1.00 Tj=125C 0.10 Tj=25C VTM(V) 0.01 0 1 2 3 4 Tj max. : Vto = 1.00 V Rd = 600 m 5 6 4/5 XL0840 PACKAGE MECHANICAL DATA TO-92 DIMENSIONS REF. A a B C Millimeters Min. Typ. Max. Min. 1.35 4.70 2.54 4.40 12.70 3.70 0.50 0.173 0.500 Inches Typ. Max. 0.053 0.185 0.100 A B C D F D E E F a 0.146 0.019 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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