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| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 - MARCH 94 FEATURES * 240 Volt VDS * RDS(on)=16 APPLICATIONS * Telephone handsets ZVN0124A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 240 160 2 20 700 -55 to +150 UNIT V mA A V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS 240 1 3 20 10 100 500 16 100 85 20 7 7 8 16 8 MAX. UNIT CONDITIONS. V V nA A A mA mS pF pF pF ns ns ns ns V DD 25V, I D=250mA V DS=25 V, V GS=0V, f=1MHz I D=1mA, V GS=0V ID=1mA, V DS= V GS V GS= 20V, V DS=0V V DS=240 V, V GS=0 V DS=192 V, V GS=0V, T=125C(2) V DS=25 V, V GS=10V V GS=10V,I D=250mA V DS=25V,I D=250mA I D(on) Static Drain-Source On-State R DS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) g fs C iss C oss C rss t d(on) tr t d(off) tf (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. 3-350 ( 3 ZVN0124A TYPICAL CHARACTERISTICS 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 2V 0 0 20 40 60 80 100 3V 4V VGS=10V 8V 6V 5V 80s pulse ID(on) -On -State Drain Current (Amps) ID(ON) On State Drain Current(Amps) 1.0 VGS=10V 7V 5V 4V 0.8 0.6 3V 0.4 0.2 2V 0 0 2 4 6 8 10 VDS-Drain Source Voltage (Volts) VDS-Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics 20 ID(ON) -On-State Drain Current (Amps) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 VDS=10V VDS=25V VDS-Drain Source (Volts) 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 100mA 500mA ID= 1A VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance () Transfer Characteristics 100 2.4 Normalised RDS(on) and VGS(th) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 -60 -40 -20 ce ur So nai Dr t sis Re ce an RD ) on S( 10 ID= 1A 500mA I00mA VGS=10V ID=0.25A Gate Threshold VGS=VDS ID=1mA Voltage VGS(th ) 1 1 10 20 0 20 40 60 80 100 120 140 160 VGS-Gate Source Voltage (Volts) Temperature (C) On-resistance vs gate-source voltage Normalised RDS(on) and VGS(th) V Temperature 3-351 ZVN0124A TYPICAL CHARACTERISTICS gfs-Forward transconductance (mS) gfs-Forward transconductance (mS) 500 400 500 400 VDS= 25V 300 300 VDS= 25V 200 200 100 100 0 0 0.2 0.4 0.6 0.8 1.0 0 0 2 4 6 .8 10 ID(On)-Drain Current (Amps) VGS-Gate-Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage VGS-Gate-Source Voltage (Volts) 70 60 50 Ciss 10 ID=700mA 8 6 VDS= 50V 100V 180V C-Capacitance (pF) 40 30 20 10 0 0 10 20 30 40 Coss Crss 50 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VDS -Drain-Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage 1.0 Gate charge v gate-source voltage PD-Power Dissipation (Watts) 0.8 0.6 0.4 0.2 .20 40 60 80 100 120 140 160 180 200 Tamb - Ambient Temperature (C) Power v temperature derating curve (ambient) 3-352 |
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