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2SC4298
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4298 500 400 10 15(Pulse30) 5 80(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF)
0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=8A IC=8A, IB=1.6A IC=8A, IB=1.6A VCE=12V, IE=-1.5A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 85typ
(Ta=25C) 2SC4298 Unit
A
23.00.3
V V V MHz pF
9.50.2
A
a b
16.2
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 25 IC (A) 8 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.8 IB2 (A) -1.6 ton (s) 1max tstg (s) 3max tf (s) 0.5max
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
15
1. 5A
VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical)
(I C/ I B= 5) Collector-Emitter Saturation Voltage V C E (s a t)( V ) Base-Emitter Saturation Voltage V B E (s at)( V) 1.5
I C - VBE Temperature Characteristics (Typical)
10 (VCE=4V)
1. 2A
800 mA
8 V B E( sat) 1.0
-55C (Cas e Temp)
Collector Current I C (A)
10
600m A
Collector Current I C (A)
6
mp)
400mA
Temp
em p) C
eT
25
C (
5
25C
125
as
I B =100mA
12
5
C
(
2
5 -5 C
VCE(sat) 0 0.03 0.05 0.1 0.5 1 5
0
0
1
2
3
4
10
20
0
0
0.2
0.4
0.6
0.8
-55C
C
(Case
200mA
0.5
(Case
125C
Cas
(Case
Temp
)
4
Temp)
e Te
ase 25C (C
)
Temp)
1.0
Collector-Emitter Voltage V C E( V)
Collector Current I C (A)
Base-Emittor Voltage V B E( V)
(VCE=4V) 50 8
j- a( C/W)
h FE - IC Characteristics (Typical)
125C
DC C urrent G ain h FE
t on* t stg * t f - I C Characteristics (Typical)
ton*t s t g*t f( s)
5 t s tg VCC 200V IC:I B1: IB2=10:1:-2 1 0.5 ton
j-a - t Characteristics
2
25C
-55C
Transient Thermal Resistance
1
10
Sw it ching Time
0.5
tf 0.1 0.5 1 5 Collector Current I C( A) 10 15
5 0.02
0.05
0.1
0.5
1
5
10 15
0.1
1
10 Time t(ms)
100
3.0
1.2
1000
Collector Current I C( A)
Safe Operating Area (Single Pulse)
50 50
Reverse Bias Safe Operating Area
80
P c - T a Derating
Ma xim um Powe r Dissipat io n P C( W)
10 0 s
60
W ith
Collector Cur rent I C( A)
Collector Curr ent I C (A)
In fin
10
10
ite he
40
at si nk
5 Without Heatsink Natural Cooling
5
Without Heatsink Natural Cooling L=3mH IB2=-1A Duty:less than 1%
20
Without Heatsink 1 5 10 50 100 500 1 5 10 50 100 500 3.5 0 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E( V)
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
96

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