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Nov 2002
AO7401 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7401 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters.
Features
VDS (V) = -30V ID = -1.2A RDS(ON) < 150m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V) RDS(ON) < 280m (VGS = -2.5V)
SC-70 (SOT-323) Top View G D S G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -30 12 -1.2 -1.0 -10 0.35 0.22 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 300 350 280
Max 360 425 320
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO7401
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-1.2A Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, ID=-1.2A VGS=-2.5V, ID=-1A VDS=-5V, ID=-1.2A -0.6 -10 122 173 147 3 207 4.5 -0.85 150 220 200 280 -1 -0.5 -1 Min -30 -1 -5 100 -1.4 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
gFS VSD IS
Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
409 55 42 12 5.06 0.72 1.58 6.2 3.2 41.2 14.5 13.2 5.4
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
VGS=-4.5V, VDS=-15V, ID=-1A
VGS=-10V, VDS=-15V, RL=15, RGEN=3
IF=-1A, dI/dt=100A/s Body Diode Reverse Recovery Charge IF=-1A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO7401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 -5V -4V 8 6 4 2 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 300 Normalized On-Resistance 1.8 -2.5V -10V VGS=-3.5V 8 -3V -ID (A) 6 -ID(A) 125C 10 VDS=-5V 25C
4
-2.0V
2
0 0 0.5 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics
250 RDS(ON) (m) VGS=-2.5V 200 VGS=-4.5V 150 VGS=-10V 0 1 2 3 4 5 6
1.6
VGS=-10V VGS=-4.5V
1.4 VGS=-2.5V 1.2 ID=-1A
1
100
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 350 300 250 200 150 25C 100 50 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -IS (A) 125C ID=-1A
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C
Alpha and Omega Semiconductor, Ltd.
RDS(ON) (m)
AO7401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 1 2 3 4 5 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-1A Capacitance (pF) 600 500 400 300 200 Coss 100 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Crss Ciss
100.00 TJ(Max)=150C TA=25C 10.00 Power (W) -ID (Amps) RDS(ON) limited 1.00 0.1s 1s 10s 0.01 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 100s 1ms 10ms 10s
14 12 10 8 6 4 2 0 0.001 TJ(Max)=150C TA=25C
0.10
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=360C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
SC-70 3L Package Data
SYMBOLS DIMENSIONS IN MILLIMETERS
A A1 A2 b C D E E1 F e e1 L 1
MIN MAX 0.90 1.10 0.00 0.10 0.90 1.00 0.25 0.40 0.10 0.20 1.80 2.20 1.15 1.35 2.00 2.20 0.30 0.40 0.65 BSC 1.30 BSC 0.10 0.30 1 8
NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. OTHER NAME OF THIS PACKAGE IS CALLED SOT-323
PACKAGE MARKING DESCRIPTION
RECOMMENDATION OF LAND PATTERN
SC-70 3L PART NO. CODE
PNW
LT
PART NO. AO7401
CODE 1
NOTE: P - PART NUMBER CODE. N - FOUNDRY AND ASSEMBLY LOCATION CODE W - YAER AND WEEK CODE. L T - ASSEMBLY LOT CODE.
Rev. A
SC-70 3L Tape and Reel Data
SC-70 3L Carrier Tape
SC-70 3L Reel
SC-70 3L Tape
Leader / Trailer & Orientation

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